J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser
{"title":"p/sup +/-薄表面层肖特基势垒增强高速伪晶Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As和Ga/sub 0.5/In/sub 0.5/ p/ In/sub 0.15/Ga/sub 0.85/As modfet","authors":"J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser","doi":"10.1109/CORNEL.1993.303127","DOIUrl":null,"url":null,"abstract":"In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p/sup +/-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 /spl mu/m gate length are, g/sub mmax/=224mS/mm, 200mS/mm, I/sub DSmax/=300mA/mm, 400 mA/mm, V/sub BrDG/ (I/sub G/=1 mA/mm)=10 V, 14 V, f/sub T/=15 GHz, 12 GHz, f/sub max/=59 GHz, 42 GHz, respectively.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"p/sup +/-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As and Ga/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As MODFETs\",\"authors\":\"J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser\",\"doi\":\"10.1109/CORNEL.1993.303127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p/sup +/-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 /spl mu/m gate length are, g/sub mmax/=224mS/mm, 200mS/mm, I/sub DSmax/=300mA/mm, 400 mA/mm, V/sub BrDG/ (I/sub G/=1 mA/mm)=10 V, 14 V, f/sub T/=15 GHz, 12 GHz, f/sub max/=59 GHz, 42 GHz, respectively.<<ETX>>\",\"PeriodicalId\":129440,\"journal\":{\"name\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"160 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1993.303127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we report on our investigation of the introduction of a highly p-doped very thin surface layer in combination with GaInP as the wide bandgap material in order to improve the breakdown voltage of GaAs based pseudomorphic MODFETs without deteriorating other device performances. In order to proof the quality of this approach we compare the device performance of the new device with that of a conventional AlGaAs/InGaAs MODFET also having a p/sup +/-surface layer. The device performances of AlGaAs/InGaAs and GaInP/InGaAs devices with 1.8 /spl mu/m gate length are, g/sub mmax/=224mS/mm, 200mS/mm, I/sub DSmax/=300mA/mm, 400 mA/mm, V/sub BrDG/ (I/sub G/=1 mA/mm)=10 V, 14 V, f/sub T/=15 GHz, 12 GHz, f/sub max/=59 GHz, 42 GHz, respectively.<>
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