化学束外延生长高击穿电压InAlAs/InGaAs(P)双异质结双极晶体管

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303069

J. Cowles, W. Chen, G. Munns, G. Haddad

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引用次数: 1

摘要

采用化学束外延(CBE)技术制备了InAlAs/InGaAs单(S)和双(D)异质结双极晶体管(HBTs)。与SHBT相比，DHBT具有InGaAsP预集电极，可将击穿电压从2V大大提高到8V，并将集电极发射极偏置电压从360mV降低到210mV。在这两种结构中，共发射极电流增益/压升/仍然很高。在DHBT上进行的微波测量表明，f/下标t/随着J/下标c/单调增加，至少达到10/sup 5/ A/cm/sup 2/，没有显示出基础推出的迹象。这些结果表明，CBE生长的dhbt是高功率应用的有前途的器件

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InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

InAlAs/InGaAs single(S) and double(D) heterojunction bipolar transistors (HBTs) have been grown by Chemical Beam Epitaxy (CBE). The DHBT features an InGaAsP precollector that greatly increases the breakdown voltage from 2V to 8V and decreases the collector emitter offset voltage from 360mV to 210mV in comparison to the SHBT. The common emitter current gain /spl beta/ remains high in both structures. Microwave measurements performed on the DHBT reveal that f/sub t/ increases monotonically with J/sub c/ up to at least 10/sup 5/ A/cm/sup 2/ showing no signs of base pushout. These results show that CBE grown DHBTs are promising devices for high power applications.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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