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2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C 150℃下原子层沉积In-Ga-Zn-O有源通道氧化薄膜晶体管的低温工艺兼容性
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830568
So-Jung Yoon, Seung-Bo Ko, Nak-Jin Seong, Kyu-jeong Choi, W. Shin, S. Yoon
{"title":"Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C","authors":"So-Jung Yoon, Seung-Bo Ko, Nak-Jin Seong, Kyu-jeong Choi, W. Shin, S. Yoon","doi":"10.23919/AM-FPD.2019.8830568","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830568","url":null,"abstract":"We investigated the effects of post-annealing process temperature on the device characteristics and stabilities of the oxide thin-film transistors (TFTs) using the In-Ga-Zn-O (IGZO) active layers prepared by atomic-layer deposition process. The fabricated IGZO TFTs exhibited a high saturation mobility of 12.0 cm2/Vs and a subthreshold swing of 0.20 V/dec after the annealing at 150 °C. The density of tail and deep states for the ALD-IGZO TFTs annealed at 150 °C was estimated to be 7.3×1017 in the mid-gap region. The threshold voltage shifts for the TFTs annealed at 150 °C were estimated to be −3.5 and −2.3 V under the positive and negative bias temperature stress tests at 60 °C for 104 s, respectively.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122091186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel measurement method of ion impurity in OPV materials OPV材料中离子杂质的新测量方法
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830562
Masaru Inoue, N. Oyabu, Yo Kumoda, Yu Suenaga, Tomoya Ishii, H. Naito
{"title":"Novel measurement method of ion impurity in OPV materials","authors":"Masaru Inoue, N. Oyabu, Yo Kumoda, Yu Suenaga, Tomoya Ishii, H. Naito","doi":"10.23919/AM-FPD.2019.8830562","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830562","url":null,"abstract":"We have demonstrated the measurement of the concentration of ion impurities in organic photovoltaic (OPV) materials by using a transient current measurement method that has been developed for the screening and the optimization of thin film transistor-liquid crystal displays since 1993. We speculate that ion impurity has impact on an efficiency and lifetime of OPV devices and confirm that there is a remarkable correlation between the concentration of ion impurity and the OPV characteristics.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO2 Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C 150℃下原子层沉积HfO2栅极绝缘体制备In-Ga-Zn-O薄膜晶体管的低热预算工艺建议
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830595
Se-Na Choi, So-Yeong Na, Sung‐Min Yoon
{"title":"Proposals on Lower Thermal Budget Process for In-Ga-Zn-O Thin Film Transistor Using HfO2 Gate Insulators Prepared by Atomic-Layer Deposition at a Temperature of 150°C","authors":"Se-Na Choi, So-Yeong Na, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2019.8830595","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830595","url":null,"abstract":"The device characteristics and reliability of the In-Ga-Zn-O (IGZO) TFTs employing the HfO2 gate insulator prepared by atomic-layer deposition (ALD) at a temperature as low as 150°C were investigated. The leakage current density and the dielectric constant for this HfO2 thin film were obtained to be 3.8×10−7 A/cm2 and 22, respectively. The IGZO TFT showed a saturation mobility of 6.8 cm2/Vs and a subthreshold swing of 0.26 V/dec. Under the positive bias stress condition, the threshold voltage shift was evaluated to be less than −0.19 V.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"100 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128013912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction and Etching of Si-Rich SiOx Film by Atomic Hydrogen Annealing 原子氢退火法还原和蚀刻富硅SiOx薄膜
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830571
A. Heya
{"title":"Reduction and Etching of Si-Rich SiOx Film by Atomic Hydrogen Annealing","authors":"A. Heya","doi":"10.23919/AM-FPD.2019.8830571","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830571","url":null,"abstract":"To clarify the influence of atomic hydrogen on various materials is required for realization of a sustainable society using hydrogen energy. The influence of atomic hydrogen was investigated from the reaction of Si-rich SiOx film on a Si wafer using atomic hydrogen annealing (AHA). In AHA, the high-density atomic hydrogen is generated on a heated tungsten surface by catalytic cracking reaction. The Si-rich SiOx film was reduced by AHA. The Si-rich SiOx film was etched with an etching rate of 1.0 nm/min. It is considered that the chemical reactions of reduction and etching are originated from disordered bond network due to Si rich region. The Si-rich SiOx film is expected to be used as an atomic hydrogen sensor.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130080763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon Heating Tube Rapid Heating System for Fabricating Silicon Solar Cells 制造硅太阳能电池用碳热管快速加热系统
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830585
Tomoyoshi Miyazaki, Go Kobayashi, I. Serizawa, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Sameshima
{"title":"Carbon Heating Tube Rapid Heating System for Fabricating Silicon Solar Cells","authors":"Tomoyoshi Miyazaki, Go Kobayashi, I. Serizawa, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Sameshima","doi":"10.23919/AM-FPD.2019.8830585","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830585","url":null,"abstract":"We report 2.45-GHz microwave heating system with a carbon heating tube (CHT) made by a 4-mm-diameter and 60-mm-long-quartz tube filled with conductive carbon particles and Ar gas at 1400 Pa set in a 300-mm-diameter-sized metal cavity. The three-dimensional finite element numerical simulation method resulted in the most effective electrical conductivity of CHT ranged from 10 to 55 S/m to absorb the microwave power. A proportional-integral-differential feedback CHT temperature control system was used to activate 1.0×1015-cm−2-boron and phosphorus implanted regions in n-type crystalline silicon substrate from 1000 to 1200°C. The CHT heating at 1200°C realized decrease in the sheet resistivity to 146 Ω/sq, decrease in the density of defect states to 1.3×1011 and 9.2×1010 cm−2 for boron (p+) and phosphorus (n+) implanted surfaces, and solar cell characteristic with a conversion efficiency of 15% under illumination of air mass 1.5 at 0.1 W/cm2.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128932198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology trend of cover glass for automotive displays 汽车显示器盖板玻璃技术发展趋势
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830559
M. Tamada, H. Mishiro, Shinji Kobune
{"title":"Technology trend of cover glass for automotive displays","authors":"M. Tamada, H. Mishiro, Shinji Kobune","doi":"10.23919/AM-FPD.2019.8830559","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830559","url":null,"abstract":"In recent years, the tendency to use glass as a cover material of automotive displays is accelerating due to its high durability and attractive appearance. When used as an in-vehicle application, properties such as high reliability and anti-glare property are required in addition to the properties required for tablets and smartphones. By selecting a glass composition with high weather ability and easy chemical strengthening, it was possible to achieve both strength and reliability for the first time. By forming the anti-glare structure and the anti-reflection coating on the substrate surface, the visibility of the display image could be greatly improved. From these verifications it was possible to clarify design guidelines for automotive cover glasses.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123553077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development Strategy of Thin Film Solar Cells: Low-cost & High-efficiency 薄膜太阳能电池的发展策略:低成本与高效率
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830554
Tae-Won Kim
{"title":"Development Strategy of Thin Film Solar Cells: Low-cost & High-efficiency","authors":"Tae-Won Kim","doi":"10.23919/AM-FPD.2019.8830554","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830554","url":null,"abstract":"Thin film solar cells have attracted much attention due to their potentials in efficiency as well as cost. Among the thin film solar cells, Cu(Ga,In)Se2 (CIGS) compound semiconductors have been extensively studied as a promising absorber material for utilizing solar energy. In fact, the CIGS solar cells have shown a maximum cell efficiency exceeding 22.9% in the laboratory scale. Various technologies, that include co-evaporation, 2-step sputtering, and chemical vapor deposition, have been developed to fabricate high efficiency CIGS solar cell. In present, commercialization of CIGS has achieved using 2-step sputtering process, by Japanese company Solar Frontier Co.. Nevertheless, cost and efficiency issues are still important in CIGS solar cell manufacturing. Several years ago, our group have suggested one-step sputtering process, in which we do not carry out an additional selenization process, as a promising fabrication technologies of CIGS thin films. The process has the potential to manufacture high efficiency CIGS solar cell at relatively low cost. In this presentation, we report that our results on the CISG solar cells fabricated using one-step sputtering process and discuss the development strategy of thin film solar cells in view point of cost and efficiency.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117266530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries 不同沟道几何形状柔性InGaZnO薄膜晶体管机械应变诱导偏应力不稳定性分析
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830599
H. Jang, Ki-hwan Kim, Saeroonter Oh, Sung‐Min Yoon
{"title":"Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries","authors":"H. Jang, Ki-hwan Kim, Saeroonter Oh, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2019.8830599","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830599","url":null,"abstract":"Channel geometry effects on the gate bias-stress instabilities of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films with a thickness of 1.2 μm were investigated. The flexible IGZO TFT exhibited a saturation mobility of 13.2 cm2/Vs and a subthreshold swing of 0.19 V/dec. Excellent positive bias stress (PBS) stabilities could be successfully obtained at a gate bias of 20 V even under the mechanically-strained conditions. Alternatively, at a higher bias stress of 35 V, the turn-on voltage shifts at a bending radius of 1 mm during the PBS tests were estimated for the TFTs with channel widths of 20 μm and 160 μm to be 0.7 and 4.9 V, respectively. Channel geometry-dependent PBS instability was suggested to originate from the stress concentration along the bending axis, which was verified by the evaluation results measured at various conditions and the TCAD simulations.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128100429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method 薄雾CVD法制备Ga-Sn-O薄膜热电转换装置
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830612
Tatsuya Aramaki, T. Matsuda, K. Umeda, M. Uenuma, M. Kimura
{"title":"Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method","authors":"Tatsuya Aramaki, T. Matsuda, K. Umeda, M. Uenuma, M. Kimura","doi":"10.23919/AM-FPD.2019.8830612","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830612","url":null,"abstract":"We fabricated a Ga-Sn-O (GTO) thin film thermoelectric conversion devise at atmospheric pressure by the Mist Chemical Vapor Deposition (Mist CVD) method and evaluated the dependence of the power factor (PF) on the composition ration of Ga:Sn. The highest PF obtained in this study was 0.0598 mW / mK2 when Ga:Sn=1:3.5. At that time, the Seebeck coefficient was −67.9 μV/K and the conductivity was 130 S/cm.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123868677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Characterization of p-type SnO Thin-Film Transistors by Reactive DC Magnetron Sputtering 反应性直流磁控溅射制备p型SnO薄膜晶体管及表征
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI: 10.23919/AM-FPD.2019.8830617
Chien-Yie Tsay, M. Lin, Fong-Yi Chang, Yu-Wu Wang
{"title":"Fabrication and Characterization of p-type SnO Thin-Film Transistors by Reactive DC Magnetron Sputtering","authors":"Chien-Yie Tsay, M. Lin, Fong-Yi Chang, Yu-Wu Wang","doi":"10.23919/AM-FPD.2019.8830617","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830617","url":null,"abstract":"In this study, the p-type SnO thin films were prepared on Si/SiO2 substrates by reactive DC magnetron sputtering and post-annealing treatment. We investigated the effects of annealing temperature on the electrical properties of the p-type SnO semiconductor thin films and thin-film transistors. XRD examination confirmed that these as-prepared SnO thin films were polycrystalline in nature and exhibited tetragonal SnO structure. The electrical resistivity of the annealed SnO thin films increased with raising annealing temperature because the reduction in the hole concentration. According to the transfer characteristics of the SnO TFTs, it was found that raising annealing temperature not only reduced the on current and off current but also leaded to the threshold voltage shifted towards negative voltage region. The TFT with a 200 °C annealed SnO active channel layer showed the highest on-to-off current ratio of 3.35×103, the smallest subthreshold swing of 10.0 V/dec, and a mobility of 1.65 cm2/Vs.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117331600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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