Carbon Heating Tube Rapid Heating System for Fabricating Silicon Solar Cells

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI:10.23919/AM-FPD.2019.8830585

Tomoyoshi Miyazaki, Go Kobayashi, I. Serizawa, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Sameshima

{"title":"Carbon Heating Tube Rapid Heating System for Fabricating Silicon Solar Cells","authors":"Tomoyoshi Miyazaki, Go Kobayashi, I. Serizawa, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Sameshima","doi":"10.23919/AM-FPD.2019.8830585","DOIUrl":null,"url":null,"abstract":"We report 2.45-GHz microwave heating system with a carbon heating tube (CHT) made by a 4-mm-diameter and 60-mm-long-quartz tube filled with conductive carbon particles and Ar gas at 1400 Pa set in a 300-mm-diameter-sized metal cavity. The three-dimensional finite element numerical simulation method resulted in the most effective electrical conductivity of CHT ranged from 10 to 55 S/m to absorb the microwave power. A proportional-integral-differential feedback CHT temperature control system was used to activate 1.0×1015-cm−2-boron and phosphorus implanted regions in n-type crystalline silicon substrate from 1000 to 1200°C. The CHT heating at 1200°C realized decrease in the sheet resistivity to 146 Ω/sq, decrease in the density of defect states to 1.3×1011 and 9.2×1010 cm−2 for boron (p+) and phosphorus (n+) implanted surfaces, and solar cell characteristic with a conversion efficiency of 15% under illumination of air mass 1.5 at 0.1 W/cm2.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

We report 2.45-GHz microwave heating system with a carbon heating tube (CHT) made by a 4-mm-diameter and 60-mm-long-quartz tube filled with conductive carbon particles and Ar gas at 1400 Pa set in a 300-mm-diameter-sized metal cavity. The three-dimensional finite element numerical simulation method resulted in the most effective electrical conductivity of CHT ranged from 10 to 55 S/m to absorb the microwave power. A proportional-integral-differential feedback CHT temperature control system was used to activate 1.0×1015-cm−2-boron and phosphorus implanted regions in n-type crystalline silicon substrate from 1000 to 1200°C. The CHT heating at 1200°C realized decrease in the sheet resistivity to 146 Ω/sq, decrease in the density of defect states to 1.3×1011 and 9.2×1010 cm−2 for boron (p+) and phosphorus (n+) implanted surfaces, and solar cell characteristic with a conversion efficiency of 15% under illumination of air mass 1.5 at 0.1 W/cm2.

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制造硅太阳能电池用碳热管快速加热系统

本文报道了一种2.45 ghz微波加热系统，该系统由直径4 mm、长60 mm的石英管制成，管内填充导电碳颗粒和Ar气体，温度为1400 Pa，置于直径300 mm的金属腔中。三维有限元数值模拟结果表明，CHT的电导率在10 ~ 55 S/m范围内最有效地吸收微波功率。采用比例-积分-微分反馈CHT温度控制系统，在1000 ~ 1200℃范围内激活n型晶体硅衬底中1.0×1015-cm−2-硼和磷注入区。在1200°C的CHT加热下，硼(p+)和磷(n+)注入表面的电阻率降至146 Ω/sq，缺陷态密度降至1.3×1011和9.2×1010 cm−2，在0.1 W/cm2的空气质量1.5照射下，太阳能电池的转换效率达到15%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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