薄雾CVD法制备Ga-Sn-O薄膜热电转换装置

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2019-07-01 DOI:10.23919/AM-FPD.2019.8830612

Tatsuya Aramaki, T. Matsuda, K. Umeda, M. Uenuma, M. Kimura

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引用次数: 0

摘要

采用薄雾化学气相沉积(Mist CVD)方法制备了常压下的Ga-Sn- o (GTO)薄膜热电转换器件，并对功率因数(PF)与Ga:Sn组成比的关系进行了研究。当Ga:Sn=1:3.5时，得到的最大PF为0.0598 mW / mK2。此时，Seebeck系数为−67.9 μV/K，电导率为130 S/cm。

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Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method

We fabricated a Ga-Sn-O (GTO) thin film thermoelectric conversion devise at atmospheric pressure by the Mist Chemical Vapor Deposition (Mist CVD) method and evaluated the dependence of the power factor (PF) on the composition ration of Ga:Sn. The highest PF obtained in this study was 0.0598 mW / mK2 when Ga:Sn=1:3.5. At that time, the Seebeck coefficient was −67.9 μV/K and the conductivity was 130 S/cm.

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2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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