L. D. Clough, H. A. Deadman, J. Smith, C. A. Tearle, J. Birbeck
{"title":"High Efficiency J Band Read IMPATT Amplifiers","authors":"L. D. Clough, H. A. Deadman, J. Smith, C. A. Tearle, J. Birbeck","doi":"10.1109/EUMA.1979.332771","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332771","url":null,"abstract":"This paper describes the development of an efficient, compact amplifier with a gain of 20 dB and an output of 2 W in J Band. An overall efficiency of greater than 10% was achieved using GaAs Read IMPATT diodes with Schottky barrier contacts in a three stage reflection amplifier. The severe gain compression that usually occurs with IMPATT amplifiers can present a considerable problem in that owing to the presence of a small-signal oscillation, there will be an output signal in the absence of an input signal. It is shown that by operating the IMPATT diode at a constant voltage and by appropriate selection of the Schottky barrier metal, the diode bias current will increase with increasing rf signal level thus achieving a more linear input-output characteristic. This allows higher gain at large signal levels together with stability at small signal levels.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132593083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MIC Power Combiners for FET Amplifiers","authors":"J. Quine, J. Mcmullen, H. Prather","doi":"10.1109/EUMA.1979.332654","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332654","url":null,"abstract":"A matched six-way MIC radial waveguide combiner operating in a half-wave mode is described. A second configuration is matched by high impedance quarter-wavelength lines with bandwidth increased through the use of shunting half-wavelength lines.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"2008 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125616460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ku - Band Power Combining of Push-Pull Operated Impatt Diodes","authors":"F. Diamand","doi":"10.1109/EUMA.1979.332768","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332768","url":null,"abstract":"A 10 watts CW oscillator in Ku-band has been developed, using six high efficiency GaAs IMPATT diodes. The diodes are associated in pairs and push-pull operated in three combining modules coupled to a cylindrical cavity. 20% efficiency with a nearly 100% combining efficiency has been obtained.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"31 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130796792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Grating-Tuner in Dielectric Image Line for Integrated Millimeterwave Circuits","authors":"K. Solbach","doi":"10.1109/EUMA.1979.332747","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332747","url":null,"abstract":"It is shown that concentrated line discontinuities for matching purposes, like e.g. a sliding screw, in open dielectric image line can cause heavy radiation losses. A distributed reflection structure which can be used as a \"sliding screw\"-tuner with neglectable radiation losses in dielectric image line (as well as in other open dielectric waveguides) is investigated. The structure consists of a periodically metalized dielectric sheet (grating structure), which can be moved along the dielectric image line.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131341131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fast, Fully-Redundant, 4 GHz, 8 × 8 Microwave Switch Matrix for Communications Satellites","authors":"F. Assal, X. Rozec","doi":"10.1109/EUMA.1979.332703","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332703","url":null,"abstract":"A lightweight, low-power-consuming, MIC, 8 × 8 microwave switch matrix has been developed for communications satellites at the 3.95 GHz center frequency. The broadband, cross-bar configuration has been implemented to provide full interconnect flexibility within the 500 MHz communications band. Push-pull connectors which were configured to contain the PIN-diode switches are used to provide a coaxial RF interface between the eight-input and eight-output-distribution (MIC) networks and to ease the assembly/disassembly of this three-dimensional MSM. Four 8 × 8 MSM assemblies were fabricated and integrated together via interdigitated Lange hybrids and SPDT electromechanical switches to significantly enhance functional reliability by providing input and output-path redundancy.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120835329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"12 GHz Variable-Gain Amplifier with Dual-Gate GaAs FET for Satellite Use","authors":"G. Ohm, J. Czech","doi":"10.1109/EUMA.1979.332717","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332717","url":null,"abstract":"The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ± 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, phase, and temperature behaviour are shown. The effect of second gate termination is studied by computer simulation, based on three-port s-parameters which have been measured up to 18 GHz.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"298 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116585134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Synthesis of Broadband Symmetric Binary Power Dividers","authors":"L. Nystrom","doi":"10.1109/EUMA.1979.332752","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332752","url":null,"abstract":"This paper describes the synthesis of broadband symmetric binary power dividing trees. The synthesis is made with the even and odd modes. The different modes are optimized together with the isolating resistances as variables. The synthesis is done by a minimization of the absolute value of the reflection coefficient for each mode at different frequencies. The synthesis is continued until the specified ripple level is reached for one of the matching curves. The other curves are better matched. A large number of 4,8, and 16 way power dividers have been synthesized with SWR = 1.2, 1.1, 1.05 and with up to 16 quarter wave transformers in the even mode. A 4 way divider with 7 transformers in the even mode and 3 isolating resistors in each odd mode has been built with the center frequency 5 GHz. The total bandwidth (fmax/fmin) of the whole divider, 4.5, was measured to 4.1.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123660839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Aiga, Y. Higaki, M. Kato, Y. Kajiwara, Y. Yukimoto, K. Shirahata
{"title":"1 GHz 100 W Internally Matched Static Induction Transistor","authors":"M. Aiga, Y. Higaki, M. Kato, Y. Kajiwara, Y. Yukimoto, K. Shirahata","doi":"10.1109/EUMA.1979.332767","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332767","url":null,"abstract":"A 1 GHz lOOW transistor has been accomplished with a new silicon device, static induction transistor. A fine patterning technique brought the transistor chip to a high pawer capacity without sacrificing a power gain. An internal matching technique was employed to ensure the parallel openration of multi-celled transistor chips. As a result, at 1 GHz CW operation, a gain of 4 dB and a drain efficiency of 55 % with an output paver of 100 watts was obtained. The saturation output power, at 1 dB gain compression point, was 110 watts. This successful performance was brought by the achievement of even power sharing, which was obtained by the aids of the internal matching and a thermal stability at high current region of the static induction transistor in its nature.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125071527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microwave Trapped Plasma Devices Observed on a 35 GHz Sampling Oscilloscope","authors":"J. Carroll, J. Everard","doi":"10.1109/EUMA.1979.332764","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332764","url":null,"abstract":"Optoelectronic switches have been built to generate and sample 100 volt pulses in 10 ps. This gives a unique opportunity to observe avalanche processes in X-band Trapatt diodes which are driven well above breakdown. The expected behaviour of such Trapatt diodes in a resistive npn-oscillatory circuit is reviewed for a step voltage drive and also for an optical pulse input. It is concluded that 10 ps switches are essential to provide a sufficiently fast ramp voltage to initiate the trapped plasma and to sample adequately the subsequent collapse of voltage across the diode. Progress in this technique of optoelectronic sampling is reviewed.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126392013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evolution of Pulse Compression in the Radar Field","authors":"M. Carpentier","doi":"10.1109/EUMA.1979.332676","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332676","url":null,"abstract":"1 - What is pulse compression 2 - Why to use pulse compression in radars 3 - Evolution of technological means to achieve pulse compression in radars 4 - Conclusion","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121956927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}