1 GHz 100 W Internally Matched Static Induction Transistor

Abstract

A 1 GHz lOOW transistor has been accomplished with a new silicon device, static induction transistor. A fine patterning technique brought the transistor chip to a high pawer capacity without sacrificing a power gain. An internal matching technique was employed to ensure the parallel openration of multi-celled transistor chips. As a result, at 1 GHz CW operation, a gain of 4 dB and a drain efficiency of 55 % with an output paver of 100 watts was obtained. The saturation output power, at 1 dB gain compression point, was 110 watts. This successful performance was brought by the achievement of even power sharing, which was obtained by the aids of the internal matching and a thermal stability at high current region of the static induction transistor in its nature.