{"title":"卫星用12ghz可变增益双栅GaAs场效应管放大器","authors":"G. Ohm, J. Czech","doi":"10.1109/EUMA.1979.332717","DOIUrl":null,"url":null,"abstract":"The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ± 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, phase, and temperature behaviour are shown. The effect of second gate termination is studied by computer simulation, based on three-port s-parameters which have been measured up to 18 GHz.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"298 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"12 GHz Variable-Gain Amplifier with Dual-Gate GaAs FET for Satellite Use\",\"authors\":\"G. Ohm, J. Czech\",\"doi\":\"10.1109/EUMA.1979.332717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ± 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, phase, and temperature behaviour are shown. The effect of second gate termination is studied by computer simulation, based on three-port s-parameters which have been measured up to 18 GHz.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"298 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
12 GHz Variable-Gain Amplifier with Dual-Gate GaAs FET for Satellite Use
The performance of a single-stage variable-gain amplifier at 12 GHz is described, including intermodulation behaviour. The amplifier has a gain control range of 26 dB and a gain flatness of ± 0.5 dB over the 800 MHz bandwidth. Some fundamental features of the dual-gate FET such as noise, phase, and temperature behaviour are shown. The effect of second gate termination is studied by computer simulation, based on three-port s-parameters which have been measured up to 18 GHz.
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