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1979 9th European Microwave Conference最新文献

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Study of Image Guide Bandwidth 导像带宽的研究
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332746
R. Birch, R. Collier
{"title":"Study of Image Guide Bandwidth","authors":"R. Birch, R. Collier","doi":"10.1109/EUMA.1979.332746","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332746","url":null,"abstract":"The paper discusses the various parameters which determine the bandwidth of image guide and includes a series of theoretical graphs. As a result, the optimum design parameters for wide-band image guide will be given. The paper also includes some measurements of the bandwidth of some image guide components.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122302682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Propagation in Semiconductor Loaded Slot-Line with Perpendicular Induction 垂直感应半导体负载槽线中的传输
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332761
J. Mazur
{"title":"Propagation in Semiconductor Loaded Slot-Line with Perpendicular Induction","authors":"J. Mazur","doi":"10.1109/EUMA.1979.332761","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332761","url":null,"abstract":"The boundary va1ue problem associated with shielded slot - line 1oaded with a thin slab of the perpendicularly magnetized semiconductor is formulated in terms of a hybrid - mode representation. It is assumed that magnetized semiconductor can by treated as the impedance Hall current wall. The boundary conditions at the interface containing slab of the magnetized semiconductor are then expressed in terms of two coupled integra1 equations which are subsequently so1ved by the Galerkin's method. Numerical results of the phase contant are compared with analytical resu1ts previous1y published for the rectangu1ar waveguide containing thin slab of the transversely magnetized semiconductor.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134145973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Efficient Computation of Boundary Value Problems using Conformal Transformations Combined with Numerical Techniques 保角变换与数值技术相结合的边值问题高效计算
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332758
R. Levy
{"title":"Efficient Computation of Boundary Value Problems using Conformal Transformations Combined with Numerical Techniques","authors":"R. Levy","doi":"10.1109/EUMA.1979.332758","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332758","url":null,"abstract":"This paper describes a new approach to the solution of two-dimensional boundary value problems which eliminates the disadvantages and combines the advantages of both conformal transformations and numerical methods. The conformal transformations are used to remove potential gradient singularities, and numerical (e.g. finite difference) methods may then be applied to the resulting almost-regular field problems. Boundary value problems previously regarded as very difficult become tractable, and considerable savings in computer time and storage requirements are achieved. The method is applied to the calculation of the even and odd mode capacitances of cylindrical rods between plane parallel ground planes.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125094695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Fin-Line Discontinuities 鱼鳍线不连续分析
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332745
H. El Hennawy, K. Schunemann
{"title":"Analysis of Fin-Line Discontinuities","authors":"H. El Hennawy, K. Schunemann","doi":"10.1109/EUMA.1979.332745","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332745","url":null,"abstract":"Various discontinuities in the slot width of fin-lines are accurately analysed. These include a step in the slot width, an inductive notch, a small capacitive strip, and a longitudinal stripe for mounting a semiconductor diode. Equivalent circuits are derived and related to the geometrical parameters. The results can directly be applied to a design of impedance transforming and filter networks.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115302350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Moment Method of Designing Matched Microstrip Bends 匹配微带弯头设计的矩量法
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332742
P. Anders, F. Arndt
{"title":"Moment Method of Designing Matched Microstrip Bends","authors":"P. Anders, F. Arndt","doi":"10.1109/EUMA.1979.332742","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332742","url":null,"abstract":"The equivalent capacitances and inductances of matched microstrip bends with arbitrary angle are calculated by the method of moments. Three forms of matching are considered: a one-sided curved transition, a double-sided curved transition and a mitered bend, where the optimum miter percentage is computed for minimized bend VSWR.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129955562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A New Nonreciprocal Ferrite Junction 一种新型非互易铁氧体结
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332729
J. Mazur
{"title":"A New Nonreciprocal Ferrite Junction","authors":"J. Mazur","doi":"10.1109/EUMA.1979.332729","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332729","url":null,"abstract":"A new type of four-port nonreciprocal ferrite device which has features of the isolator, circulator and power devider is described. The nonreciprocal effects are due to the physical principles of the wave propagation in a ferrite stripline immersed into the bidirectional dc. magnetic field. An approximate analysis is presented with the physical. description of the modes in the strip1ine. Finally a new type of the nonreciprocal. ferrite junction has been succesfully developed.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130194062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and Performance of a One Megawatt, 3.1 - 3.5 GHz Coaxial Magnetron 一兆瓦3.1 - 3.5 GHz同轴磁控管的设计与性能
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332669
T. Ruden
{"title":"Design and Performance of a One Megawatt, 3.1 - 3.5 GHz Coaxial Magnetron","authors":"T. Ruden","doi":"10.1109/EUMA.1979.332669","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332669","url":null,"abstract":"This paper describes a one megawatt coaxial magnetron which is mechanically tunable over a 12% frequency range. A new mode control technique for suppression of competing cavity modes is employed. Spurious signals are reduced to better than 55 dB below the peak output power of the tube via this mode control approach. Design of the interaction space of the coaxial magnetron is also discussed relative to improving starting stability and spectrum characteristics. The operating voltage of the tube is less than 40 kV, duty factor is 0.00067, efficiency is 50%, and tube weight is 600 N. Data on pushing, pulling, spectrum width, and stability are presented.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122553019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A New Type of Low Loss l4 GHz High Power Combining Network for Satellite Earth Terminals 一种用于卫星地球终端的新型低损耗14ghz大功率组合网
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332734
C. Kudsia, J. Dorey, J. Heierli, K. R. Ainsworth, G. Lo
{"title":"A New Type of Low Loss l4 GHz High Power Combining Network for Satellite Earth Terminals","authors":"C. Kudsia, J. Dorey, J. Heierli, K. R. Ainsworth, G. Lo","doi":"10.1109/EUMA.1979.332734","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332734","url":null,"abstract":"A High Power Combiner is described which provides equivalent performance at l4 GHz to that which is currently available at 6 GHz. This represents an advance in technology which is achieved through the use of: a) TEl13 Dual-Mode Elliptic Function Invar Filters exhibiting Q's in excess of ll,000, b) Precision hybrid power splitters with a balance of 3 dB±.075 dB over the l4.0-l4.5 GHz band, and c) A Thermal Design Configuration which ensures a temperature rise of not more than 30°C at maximum rated power. These Combiners are rated at l.2 kW in transmission and 3.6 kW in reflection. Using these units as building blocks, up to 6 High Power Amplifiers can be combined into a single antenna feeder input. Measured data is presented at power levels of up to l.7 kW.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134346661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Q-Band Indium Phosphide Transferred Electron Amplifiers q波段磷化铟转移电子放大器
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332772
D. M. Brookbanks, F. Cotton, A. Howard, R. Lang
{"title":"Q-Band Indium Phosphide Transferred Electron Amplifiers","authors":"D. M. Brookbanks, F. Cotton, A. Howard, R. Lang","doi":"10.1109/EUMA.1979.332772","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332772","url":null,"abstract":"Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 - 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been readily achieved from a variety of waveguide and coaxial circuits, the latter giving the broadest amplifier bandwidths. Comparison of the experimentally determined noise measure as a function of noL product shows that there is no reduction in performance when compared with the previous measurements at lower frequencies. This result is in good agreement with theoretical predictions.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131937748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broad and Narrow-Band Frequency Discriminators using Dual Gate GaAs Field Effect Transistors 采用双栅砷化镓场效应晶体管的宽窄频带鉴频器
1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI: 10.1109/EUMA.1979.332723
R. Pengelly
{"title":"Broad and Narrow-Band Frequency Discriminators using Dual Gate GaAs Field Effect Transistors","authors":"R. Pengelly","doi":"10.1109/EUMA.1979.332723","DOIUrl":"https://doi.org/10.1109/EUMA.1979.332723","url":null,"abstract":"The use of a dual-gate gallium arsenide FET as a broad-band (and narrow-band) frequency discriminator is described. Such a circuit has use in IFM systems and phase locked loops respectively. The discriminator employs a GaAs FET amplifier used as a limiter followed by a dual-gate device whose phase angle differences between the first and second gate to drain transmission coefficients with frequency can be employed as a frequency sensitive element. The paper describes the biasing needed of the device to achieve optimum performance and details the results of a full X-band discriminator using the methods outlined.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131341941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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