Q-Band Indium Phosphide Transferred Electron Amplifiers

Abstract

Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 - 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been readily achieved from a variety of waveguide and coaxial circuits, the latter giving the broadest amplifier bandwidths. Comparison of the experimentally determined noise measure as a function of noL product shows that there is no reduction in performance when compared with the previous measurements at lower frequencies. This result is in good agreement with theoretical predictions.