{"title":"q波段磷化铟转移电子放大器","authors":"D. M. Brookbanks, F. Cotton, A. Howard, R. Lang","doi":"10.1109/EUMA.1979.332772","DOIUrl":null,"url":null,"abstract":"Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 - 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been readily achieved from a variety of waveguide and coaxial circuits, the latter giving the broadest amplifier bandwidths. Comparison of the experimentally determined noise measure as a function of noL product shows that there is no reduction in performance when compared with the previous measurements at lower frequencies. This result is in good agreement with theoretical predictions.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Q-Band Indium Phosphide Transferred Electron Amplifiers\",\"authors\":\"D. M. Brookbanks, F. Cotton, A. Howard, R. Lang\",\"doi\":\"10.1109/EUMA.1979.332772\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 - 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been readily achieved from a variety of waveguide and coaxial circuits, the latter giving the broadest amplifier bandwidths. Comparison of the experimentally determined noise measure as a function of noL product shows that there is no reduction in performance when compared with the previous measurements at lower frequencies. This result is in good agreement with theoretical predictions.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332772\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Q-Band Indium Phosphide Transferred Electron Amplifiers
Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 - 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been readily achieved from a variety of waveguide and coaxial circuits, the latter giving the broadest amplifier bandwidths. Comparison of the experimentally determined noise measure as a function of noL product shows that there is no reduction in performance when compared with the previous measurements at lower frequencies. This result is in good agreement with theoretical predictions.
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