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Iee Journal on Solidstate and Electron Devices最新文献

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Thermal-resistance models for proton-isolated double-heterostructure lasers 质子隔离双异质结构激光器的热阻模型
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-03-01 DOI: 10.1049/IJ-SSED.1978.0007
D. Newman, D. Bond, J. Stefani
{"title":"Thermal-resistance models for proton-isolated double-heterostructure lasers","authors":"D. Newman, D. Bond, J. Stefani","doi":"10.1049/IJ-SSED.1978.0007","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0007","url":null,"abstract":"Calculations of the thermal resistances of stripe-geometry double-heterostructure lasers are dependent on assumptions made concerning the positions of heat sources within the laser structures. The effect on thermal resistance of heat sources located at various levels in the multilayer structure are considered here. The calculations indicate that thermal resistances of proton-isolated structures can be approximately halved when energy is radiatively transferred from the device active region rather than when all heat is generated within the device active region. This should be taken into consideration when the experimental effectiveness of laser-dice-bonding technology is being evaluated.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"398 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116505881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Analytical i.g.f.e.t. model including drift and diffusion currents 分析i.g.f.e.t.模型，包括漂移和扩散电流
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-03-01 DOI: 10.1049/IJ-SSED:19780011
G. Baccarani, M. Rudan, G. Spadini
{"title":"Analytical i.g.f.e.t. model including drift and diffusion currents","authors":"G. Baccarani, M. Rudan, G. Spadini","doi":"10.1049/IJ-SSED:19780011","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19780011","url":null,"abstract":"An analytical i.g.f.e.t. model including drift and diffusion currents along the channel is developed. The theory, which is based on a gradual-channel approximation, is essentially equivalent to the double-integral formula by Pao and Sah, which provides correct results both in weak and in strong inversion. I.G.F.E.T. characteristics such as drain current, transconductance and output conductance are analytically expressed against the surface potential at the source and drain edges of the channel, which can be numerically evaluated in a few iterative steps. The model therefore seems suitable for c.a.d. applications.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128493075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Two-dimensional modelling of s.o.s. transistors s.o.s晶体管的二维建模
Iee Journal on Solidstate and Electron Devices Pub Date : 1978-03-01 DOI: 10.1049/IJ-SSED.1978.0008
W. Fichtner
{"title":"Two-dimensional modelling of s.o.s. transistors","authors":"W. Fichtner","doi":"10.1049/IJ-SSED.1978.0008","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1978.0008","url":null,"abstract":"The paper presents a 2-dimensional numerical model used to analyse the silicon-on-sapphire transistor under various geometries, doping levels and bias conditions. The model accounts for the thin-film structure and the finite interface charge at the silicon-sapphire interface. The model also includes the possibility of simulating nonisothermal effects, and is shown to be applicable to prediction of the transistor behaviour in the high-voltage region. The complete system of four coupled partial differential equations describing the internal behaviour of the s.o.s. transistor is solved exactly. Typical results for an n-channel double-implanted inversion-layer s.o.s. transistor are shown. The agreement between theory and experiment is found to be excellent.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134039740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Intrinsic noise of transferred-electron amplifiers 转移电子放大器的本征噪声
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-11-01 DOI: 10.1049/IJ-SSED.1977.0026
H. Rees
{"title":"Intrinsic noise of transferred-electron amplifiers","authors":"H. Rees","doi":"10.1049/IJ-SSED.1977.0026","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0026","url":null,"abstract":"A theory of noise in semiconductor devices is developed, expressing the intrinsic noise as the response of the electronic system to primary fluctuations of the electrons due to the statistical nature of the scattering events. The theory leads to a computational method complementing an existing technique for solving the Boltzmann equation for a device. The method is primarily aimed at noise in hot electron devices. It is applied to the transferred-electron amplifier, taking theoretical models of GaAs as definite examples and the predictions are compared with previous theory and experimental data.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114172103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Selected bibliography on integrated injection logic (I2L)/merged transistor logic (MTL) technology 选择书目集成注入逻辑(I2L)/合并晶体管逻辑(MTL)技术
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-11-01 DOI: 10.1049/IJ-SSED.1977.0027
J. Stone, J. C. Plunkett
{"title":"Selected bibliography on integrated injection logic (I2L)/merged transistor logic (MTL) technology","authors":"J. Stone, J. C. Plunkett","doi":"10.1049/IJ-SSED.1977.0027","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0027","url":null,"abstract":"A selected bibliography is presented detailing the relevant technical literature describing the technology development and applications for integrated injection logic (I2L) and merged transistor logic (MTL).The period covered is, in effect, from 1971 to July 1977.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129028644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystal-violet/tin-oxide solar cell 结晶紫/氧化锡太阳能电池
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-11-01 DOI: 10.1049/IJ-SSED:19770029
E. W. Williams
{"title":"Crystal-violet/tin-oxide solar cell","authors":"E. W. Williams","doi":"10.1049/IJ-SSED:19770029","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770029","url":null,"abstract":"The crystal-violet/tin-oxide solar cell which has been reported briefly in a recent patent was tested for u.v. stability under a variety of chemical conditions, and, in every case, was found to be unstable. Degradation effects produced by chemical reactions are strongly indicated by absorption and action spectra as the pH of the cell was varied. The p-n junction model is rejected for this type of crystal-violet/tin-oxide heterojunction cell. The potential of organic solar cells based on a dye-oxide semiconductor junction for cheap, lightweight and large-area devices is discussed, and some of the possible materials are reviewed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115682378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer-aided design of multilayer-structure Ga1-xAIxAS-GaAs Solar cells 多层结构Ga1-xAIxAS-GaAs太阳能电池的计算机辅助设计
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-11-01 DOI: 10.1049/IJ-SSED.1977.0028
A. Usami, Y. Hamamoto
{"title":"Computer-aided design of multilayer-structure Ga1-xAIxAS-GaAs Solar cells","authors":"A. Usami, Y. Hamamoto","doi":"10.1049/IJ-SSED.1977.0028","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0028","url":null,"abstract":"The spectral response, the voltage and current that give maximum power, and the conversion efficiency have all been calculated for Ga1-xAlxAs/p-GaAs/n-GaAs solar cells that have multilayer GaAlAs windows on their surfaces. In the numerical analysis, photo-generated carrier collection in the window layers was considered. The spectral response in the short-wavelength region could be improved if either the Al composition factor x of the window layer was made larger or the window was made thinner. The lifetime of the carriers in the p-GaAs layer is especially important for improving the spectral response and the conversion efficiency. The increases of donor concentration in the n-GaAs bulk region and of acceptor concentration in the p-GaAs layer cause the current and voltage to increase. Thus the multilayer structures can make efficient use of the short-wavelength region of the spectrum and be easier to produce than a continuously graded structure. Conversion efficiencies can be approximately 20% in AMO.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124658516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical losses in O+ and B+ implanted GaAs for stripe laser 条纹激光器中O+和B+注入砷化镓的光学损耗
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-09-01 DOI: 10.1049/IJ-SSED:19770025
D. Moutonnet
{"title":"Optical losses in O+ and B+ implanted GaAs for stripe laser","authors":"D. Moutonnet","doi":"10.1049/IJ-SSED:19770025","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19770025","url":null,"abstract":"Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116582237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Use of impatt diodes as fast avalanche photodetectors 使用入射二极管作为快速雪崩光电探测器
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-09-01 DOI: 10.1049/IJ-SSED.1977.0024
D. Taylor, R. Plumb, P. Brook, J. Caroll
{"title":"Use of impatt diodes as fast avalanche photodetectors","authors":"D. Taylor, R. Plumb, P. Brook, J. Caroll","doi":"10.1049/IJ-SSED.1977.0024","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0024","url":null,"abstract":"The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124603282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Switching characteristics of m.n.o.s. memory transistors m.n.o.s存储器晶体管的开关特性
Iee Journal on Solidstate and Electron Devices Pub Date : 1977-09-01 DOI: 10.1049/IJ-SSED.1977.0018
E. Bruun
{"title":"Switching characteristics of m.n.o.s. memory transistors","authors":"E. Bruun","doi":"10.1049/IJ-SSED.1977.0018","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1977.0018","url":null,"abstract":"The m.n.o.s. transistor has gained widespread acceptance as a nonvolatile memory element. In the present paper, we examine the switching properties of the m.n.o.s. transistor by comparing the experimentally determined oxide injection current to theoretically calculated oxide currents. On basis of this investigation, we present some calculated curves from which the switching properties can be predicted for the range of gate voltages normally used for writing. Furthermore, it is shown that the switching properties at low gate voltages depend entirely on the trap density and distribution in the nitride. Usually, it is desirable to minimise the swtiching for low gate voltages. A discussion of the requirements that this imposes on the trap distribution is presented","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128886808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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