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Iee Journal on Solidstate and Electron Devices最新文献

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Thermal-impedance ageing characteristics of c.w. stripe lasers c.w.条纹激光器的热阻抗老化特性
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0041
R. Plumb, A. Goodwin, R. Baulcomb
{"title":"Thermal-impedance ageing characteristics of c.w. stripe lasers","authors":"R. Plumb, A. Goodwin, R. Baulcomb","doi":"10.1049/IJ-SSED.1979.0041","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0041","url":null,"abstract":"Laser threshold currents increase with temperature, and appreciable heat has to be dissipated from the device while it is lasing. Low thermal impedance is therefore essential for c.w. operation at high temperatures and will also extend c.w. operating life at any temperature. Life tests at elevated temperatures on our lasers showed that, in the initial stages of ageing, increases in thermal impedance were dominant. Recent improvements in chip processing have increased the stability of the chip lasing parameters to the point where thermal impedance ageing is significant even at room temperature.1 In this paper, we describe failure analyses of early lasers, discuss possible solutions to the thermal-impedance ageing problem, and finally report controlled life tests of several improved metallisations which eliminate the problem.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":" 35","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132188837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Simplified theory for mode locking in injection lasers 注入激光器锁模的简化理论
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0044
G. J. Aspin, J. Carroll
{"title":"Simplified theory for mode locking in injection lasers","authors":"G. J. Aspin, J. Carroll","doi":"10.1049/IJ-SSED.1979.0044","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0044","url":null,"abstract":"Mode locking of semiconductor injection lasers is considered theoretically through the use of rate equations. The laser losses, rather than the material gain bandwidth, are found to limit the pulse width. Estimates for power output and the effects of spontaneous emission can be made","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121295654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Growth and properties of GaAsSb/GaAIAsSb double heterostructure lasers GaAsSb/GaAIAsSb双异质结构激光器的生长与性能
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0039
C. Chaminant, J. Charil, J. Bouley, E. Rao
{"title":"Growth and properties of GaAsSb/GaAIAsSb double heterostructure lasers","authors":"C. Chaminant, J. Charil, J. Bouley, E. Rao","doi":"10.1049/IJ-SSED.1979.0039","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0039","url":null,"abstract":"The growth and properties of GaAs 1-x Sb x /Ga 1-y Al y As 1-x Sb x double-heterostructure (d.h.s.) lasers have been investigated. We have obtained lasers with an antimony content up to x = 0.17 emitting at wavelengths up to 1.12 μm at room temperature for pulsed currents as low as 120 mA. The d.h.s.s were grown by liquid-phase epitaxy on GaAs substrates. The lattice mismatch problem was overcome by growing up to ten ternary GaAs 1-x Sb x layers of graded Sb composition. A study of quaternary GaAlAsSb layer growth has shown the effect of initial saturation of the melt on the Al content of the resulting solid. To overcome this problem a special epitaxial process has been developed to grow quaternary layers with controlled aluminium content. The relative amounts of Al and Sb were determined by a photoluminescence technique which also allowed us to evaluate the band-gap energy step between the active and confinement layers. A study of the temperature dependence of the threshold current was also made for d.h.s having different aluminium compositions. Threshold current density was found to vary as exp T/T o , where T o reaches 150 K for the highest aluminium content.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123804743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range 1.3μm波长GaInAsP/InP双异质结构晶圆和激光器的制备与表征
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED:19790037
E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr
{"title":"Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range","authors":"E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr","doi":"10.1049/IJ-SSED:19790037","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790037","url":null,"abstract":"GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131887152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth and characteristics of GaInAsp/Inp double heterostructure lasers GaInAsp/Inp双异质结构激光器的生长与特性
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0035
P. Greene, G. Henshall
{"title":"Growth and characteristics of GaInAsp/Inp double heterostructure lasers","authors":"P. Greene, G. Henshall","doi":"10.1049/IJ-SSED.1979.0035","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0035","url":null,"abstract":"A horizontal furnace system has been developed for growth by liquid-phase epitaxy of multilayer laser structures consisting of InP and (Ga, In) (As, P) incorporating a number of novel features. Double heterostructure lasers emitting at l.3μm with threshold current densities as low as 900 A/cm2have been made. Measurements of the far-field beam angles have allowed the dielectric constant step between the active quaternary and passive layers for lasers emitting at both 1.15 μm and 1.3 μm (im, to be deduced. Oxide-insulated stripe-geometry c.w. lasers, operating in a single longitudinal mode, have been made with threshold currents down to 180 mA","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"9 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121002852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Guest editor for this special issue 本期特刊的客座编辑
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED:19790034
J. Whiteaway, J. Carroll
{"title":"Guest editor for this special issue","authors":"J. Whiteaway, J. Carroll","doi":"10.1049/IJ-SSED:19790034","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790034","url":null,"abstract":"","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131206156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers 条纹几何d.h.激光器模式特性的三维分析
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0043
M. Osihski, P. Eliseev
{"title":"Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers","authors":"M. Osihski, P. Eliseev","doi":"10.1049/IJ-SSED.1979.0043","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0043","url":null,"abstract":"The 3-dimensional waveguide problem for stripe-geometry D.H. lasers is solved by an iterative method. The method allows one to self consistently determine the effective dielectric constant. Self-consistent solutions for stripe lasers with symmetric Epstein profiles in the junction plane are compared with approximate solutions obtained by ignoring the influence of the lateral waveguide on the solution of the transversewaveguide problem. It is shown that the approximate method, used previously, can lead to a considerable overestimation of the near-field half width of the fundamental lateral mode.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"556 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116275241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Phase and group indices for double heterostructure lasers 双异质结构激光器的相位和群指数
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED:19790038
J. Buus, M. Adams
{"title":"Phase and group indices for double heterostructure lasers","authors":"J. Buus, M. Adams","doi":"10.1049/IJ-SSED:19790038","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790038","url":null,"abstract":"Various models for calculation of refractive indices in semiconductor laser materials are discussed and the results for GalnAsP compounds are compared. It is shown that the modified single-oscillator model appears to be the most reliable. The group index is also considered since it can be found easily from measurements of laser spectra. The value of the group index is more model sensitive than the refractive index, but it is also a function of the active-layer thickness in double heterostructures as a consequence of waveguide dispersion. A simple formula connecting group and phase indices for a symmetrical dielectric slab waveguide is derived and used to calculate the effective group index for double-heterostructure lasers","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116967941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Comments on host dispersion in ultrashort pulse generation with GaAs lasers GaAs激光器产生超短脉冲中宿主色散的评述
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED.1979.0048
P. Ho
{"title":"Comments on host dispersion in ultrashort pulse generation with GaAs lasers","authors":"P. Ho","doi":"10.1049/IJ-SSED.1979.0048","DOIUrl":"https://doi.org/10.1049/IJ-SSED.1979.0048","url":null,"abstract":"In generating short pulses with GaAs lasers, the bandwidth limited by host dispersion is estimated to be about 1 ps. A simple way to evaluate the dispersive bandwidth of GaAs lasers is given.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124052209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory 宽sio2绝缘d.h.激光器特性与近场:实验与理论
Iee Journal on Solidstate and Electron Devices Pub Date : 1979-11-01 DOI: 10.1049/IJ-SSED:19790042
J. Buus, K. Stubkjaer
{"title":"Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory","authors":"J. Buus, K. Stubkjaer","doi":"10.1049/IJ-SSED:19790042","DOIUrl":"https://doi.org/10.1049/IJ-SSED:19790042","url":null,"abstract":"A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128138677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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