E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr
{"title":"1.3μm波长GaInAsP/InP双异质结构晶圆和激光器的制备与表征","authors":"E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr","doi":"10.1049/IJ-SSED:19790037","DOIUrl":null,"url":null,"abstract":"GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range\",\"authors\":\"E. Göbel, H. Gottsmann,, H. Herzog, P. Marschall, E. Schlosser, Edward Schurr\",\"doi\":\"10.1049/IJ-SSED:19790037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19790037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19790037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation and characterisation of GaInAsP/InP double-heterostructure wafers and lasers for the 1.3μm wavelength range
GalnAsP/InP double-heterostructure lasers were grown by liquid-phase epitaxy on (100) InP substrates for the wavelength region around 1.3 μm. The preparation and the properties of the wafers are described in detail. The characterisation includes the determination of the band-gap energy, the lattice mismatch of the GalnAsP active layer to InP as a function of the melt composition, and the measurement of the optical-gain spectra. Oxide-stripe geometry lasers, prepared from the wafers, lase at around 1.3 μm with pulsed thresholds between 300 and 400 mA. Some samples have been tested in c.w. operation at room temperature for more than 1400 hours. During the first 1000 hours a threshold increase of typically 2% has been observed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
