{"title":"使用入射二极管作为快速雪崩光电探测器","authors":"D. Taylor, R. Plumb, P. Brook, J. Caroll","doi":"10.1049/IJ-SSED.1977.0024","DOIUrl":null,"url":null,"abstract":"The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Use of impatt diodes as fast avalanche photodetectors\",\"authors\":\"D. Taylor, R. Plumb, P. Brook, J. Caroll\",\"doi\":\"10.1049/IJ-SSED.1977.0024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED.1977.0024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED.1977.0024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Use of impatt diodes as fast avalanche photodetectors
The required device structure for a fast avalanche photodiode is very similar to that of a good impatt diode, which suggests that conventional impatt technology may be used to produce goodquality very fast photodiodes. An experiment to demonstrate this propostion is reported.
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