条纹激光器中O+和B+注入砷化镓的光学损耗

Iee Journal on Solidstate and Electron Devices Pub Date : 1977-09-01 DOI:10.1049/IJ-SSED:19770025

D. Moutonnet

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引用次数: 0

摘要

离子注入现在经常被用来描绘激光二极管的条纹几何形状。这种方法会产生一些缺陷，因此了解植入区的光学特性是很重要的。在重掺杂材料中，离子注入所产生的折射率增加使光学导向成为可能。因此，可以测量不同热处理后注入层的总光学损耗。

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Optical losses in O+ and B+ implanted GaAs for stripe laser

Ion implantation is now often used to delineate the stripe geometry of laser diodes. This technique creates some defects and it is important to know the optical properties of the implanted zone. The refractiveindex increase produced by ion implantation in heavily doped material allows optical guiding. So, it is possible to measure the total optical losses of the implanted layer after different heat treatments.

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Iee Journal on Solidstate and Electron Devices

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