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Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)最新文献

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A 23mW 4.5/8 GHz IR-UWB transmitter in 65nm TSMC CMOS technology 采用65nm台积电CMOS技术的23mW 4.5/ 8ghz IR-UWB发射机
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603148
A. Donno, S. D’Amico, M. De Matteis, A. Baschirotto
{"title":"A 23mW 4.5/8 GHz IR-UWB transmitter in 65nm TSMC CMOS technology","authors":"A. Donno, S. D’Amico, M. De Matteis, A. Baschirotto","doi":"10.1109/PRIME.2013.6603148","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603148","url":null,"abstract":"This paper presents a low power transmitter for Impulse-Radio Ultra-Wideband (IR-UWB) applications. It generate short duration bi-phase modulated UWB pulses with a center frequency of 4.5 / 8 GHz according to the selected channel. A simplified transmitter architecture enabling low power consumption has been adopted. The key circuit is a phase shifter used to obtain positive and negative pulses. Generated pulses comply with requirements of the IEEE 802.15.4a standard. The transmitter is designed in 65nm CMOS technology. Simulations results show that the transmitter consumes 23 mW peak power from a 1.2V supply at 8 GHz of work frequency.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114700217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A JTAG based 3D DfT architecture using automatic die detection 一种基于JTAG的三维DfT结构，采用自动模具检测
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603184
Yassine Fkih, P. Vivet, B. Rouzeyre, M. Flottes, G. Di Natale
{"title":"A JTAG based 3D DfT architecture using automatic die detection","authors":"Yassine Fkih, P. Vivet, B. Rouzeyre, M. Flottes, G. Di Natale","doi":"10.1109/PRIME.2013.6603184","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603184","url":null,"abstract":"3D stacked integrated circuits based on Through Silicon Vias (TSV) are promising with their high performances and small form factor. However, these circuits present many test issues including the test at all 3D manufacturing levels: pre, mid, and post bond levels. In this paper we propose an automatic die-detection mechanism able to detect the presence of upper and lower dies, and its integration within a JTAG based 3D test architecture. 3D die-detectors permit the optimization of the overall 3D test architecture: making it usable at all stacking levels without requiring a configuration step. This paper presents also synthesis results of the proposed test architecture with die-detectors.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115436295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A CMOS-28nm 880-MHz 4th-order low-pass active-RC filter for 60 GHz transceivers 用于60 GHz收发器的CMOS-28nm 880-MHz四阶低通有源rc滤波器
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603164
A. Pezzotta, M. De Matteis, S. D’Amico, A. Baschirotto
{"title":"A CMOS-28nm 880-MHz 4th-order low-pass active-RC filter for 60 GHz transceivers","authors":"A. Pezzotta, M. De Matteis, S. D’Amico, A. Baschirotto","doi":"10.1109/PRIME.2013.6603164","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603164","url":null,"abstract":"In this paper a 4th order low-pass continuous time analog filter in CMOS 28nm technology is presented. The filter complies with the specifications of the 60GHz next-generation transceivers. A novel circuital topology is presented suitable to perform the low-pass filtering of the in-band signal, while the in-band thermal noise is high-pass filtered, improving Signal-To-Noise-Ratio. 880MHz -3dB bandwidth is obtained by a prototype of the filter simulated in 28nm CMOS technology. The overall power consumption is 4.8mW from a single 1 V supply voltage. 51dB@THD>40dBc is the SNR at 0dB gain.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115420680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A very low OSR 90nm 1MS/s incremental ΣΔ ADC 极低OSR 90nm 1MS/s增量ΣΔ ADC
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603106
D. Cavallo, M. De Matteis, M. Ronchi, G. Leggeri, A. Baschirotto
{"title":"A very low OSR 90nm 1MS/s incremental ΣΔ ADC","authors":"D. Cavallo, M. De Matteis, M. Ronchi, G. Leggeri, A. Baschirotto","doi":"10.1109/PRIME.2013.6603106","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603106","url":null,"abstract":"A calibration free, high resolution second-order multichannel Incremental A-to-D-Converter with multi-level quantizer is presented. The system is designed for biomedical application and combines the advantages of low oversampling ratio with SC design solution, like multi bit topology and accurate opamp design. An optimal decimation filter to minimize the weighted sum of thermal and quantization noise is used. In this paper is presented the schematic level implementation of the system in a 1.2 V 90 nm CMOS Technology and the preliminary simulation shows a 56.4 dB signal-to-noise-distortion within a 500 kHz bandwidth at a 16 MHz sample frequency.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115587573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Efficiency enhancement of burst mode transmitters by RF energy recovery 利用射频能量回收提高突发模式发射机的效率
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603147
David Seebacher, W. Bosch, P. Singerl, C. Schuberth
{"title":"Efficiency enhancement of burst mode transmitters by RF energy recovery","authors":"David Seebacher, W. Bosch, P. Singerl, C. Schuberth","doi":"10.1109/PRIME.2013.6603147","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603147","url":null,"abstract":"Modern communication standards have high peak to average power ratios (PAPR) to achieve high spectral efficiency, trading of power amplifier (PA) efficiency. In this paper a method to directly reuse the RF energy reflected from carrier bursting PAs to improve the efficiency will be introduced and compared to conventional operation with and without DC energy recovery. Efficiency enhancement utilizing DC energy recovery is limited by the rectifier and PA efficiency. Therefore a method to reuse the RF energy directly, which does not suffer from these limitations is presented. It will be shown that it is possible to maintain high efficiency in back off with this method.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127624264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of a passive UHF RFID tag for capacitive sensor applications 用于电容式传感器应用的无源超高频RFID标签的设计
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603157
Kerem Kapucu, Jose Luis Merino Panadés, C. Dehollain
{"title":"Design of a passive UHF RFID tag for capacitive sensor applications","authors":"Kerem Kapucu, Jose Luis Merino Panadés, C. Dehollain","doi":"10.1109/PRIME.2013.6603157","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603157","url":null,"abstract":"In this work, the design of a passive UHF RFID tag for sensor applications is described. The system level design issues are discussed taking into account the possible operation scenarios. Among the blocks in the tag, the emphasis is on the design of the rectifier and the capacitive sensor interface. The three-stage, differential-input rectifier is designed to generate the supply voltage with input levels as low as -13 dBm. The power conversion efficiency of the rectifier is 70%, driving a 30 kΩ load at -13 dBm source power. The fully-digital capacitive sensor interface designed to operate with a humidity sensor, can work with supply voltages as low as 0.8 V with good linearity and a power consumption of 12 μW. The tag is capable of getting linear sensor readout under input power levels as low as -9 dBm. The circuits are implemented in 0.18 μm UMC CMOS process.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124633593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A promising technology of Schottky diode based on 4H-SiC for high temperature application 基于4H-SiC的肖特基二极管是一种很有前途的高温应用技术
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603182
R. Pascu, F. Craciunoiu, M. Kusko
{"title":"A promising technology of Schottky diode based on 4H-SiC for high temperature application","authors":"R. Pascu, F. Craciunoiu, M. Kusko","doi":"10.1109/PRIME.2013.6603182","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603182","url":null,"abstract":"A Schottky diode technology based on silicon carbide (SiC) with ramp oxide termination is presented. The improvement of the Schottky, respectively ohmic contact is conditioned by a rapid thermal processing to form Ni-silicide. The Schottky diodes (SD) have been electrical characterized in forward bias in range of temperature 300-573 K to verify their capacity to operate like temperature sensors. The results show an improvement of the electrical parameters with increasing of the temperature.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121328027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Full-duplex communication and remote powering implementation of an electronic knee implant 全双工通信和远程供电的电子膝关节植入物实现
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603158
Oguz Atasoy, C. Dehollain
{"title":"Full-duplex communication and remote powering implementation of an electronic knee implant","authors":"Oguz Atasoy, C. Dehollain","doi":"10.1109/PRIME.2013.6603158","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603158","url":null,"abstract":"Full-duplex communication is realized by using ASK modulation for downlink (the channel from controller to the implant) and by using FSK modulation for uplink (from implant to the controller). The ASK modulation is done at the remote powering frequency and by using the inductive link. The classE type power amplifier is fed by the modulated data. For the uplink communication a stand alone transmitter is designed with a crystal oscillator. The implant node is modeled by using a microcontroller which is sending data and a dummy resistor to mimic the power consumption of the sensors. This microcontroller is also powered up by remote powering.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116388087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CMOS 8-channel frequency division multiplexer for 9.4 T magnetic resonance imaging CMOS 8通道分频多路器用于9.4 T磁共振成像
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603097
M. Jouda, O. Gruschke, J. Korvink
{"title":"CMOS 8-channel frequency division multiplexer for 9.4 T magnetic resonance imaging","authors":"M. Jouda, O. Gruschke, J. Korvink","doi":"10.1109/PRIME.2013.6603097","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603097","url":null,"abstract":"We present a CMOS 8-channel frequency division multiplexer (FDM) to interface a phased array of micro coils for 9.4 T (400 MHz Larmor precession frequency ω0) for magnetic resonance imaging (MRI). The integrated multiplexer contributes towards a solution to achieve phased arrays with a massive number of coils without unnecessarily increasing system complexity, the size of hardware, and cost. The multiplexer is designed using commercially available 0.35 μm CMOS technology and consists of five major components: a low-noise amplifier (LNA), a frequency mixer, a voltage-controlled oscillator (VCO), a bandpass filter (BPF), and an adding operational amplifier. The maximum gain of a single channel is 79 dB, and the input referred noise is 1.4 nV/√Hz. The die area of the multiplexer is approximately 8 mm2, and requires 300 mA from a 3.3 V source.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125947851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Capacitive out of plane large stroke MEMS structure 电容式面外大行程MEMS结构
Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2013-06-24 DOI: 10.1109/PRIME.2013.6603131
C. Glacer, R. Laur, A. Dehé, D. Tumpold
{"title":"Capacitive out of plane large stroke MEMS structure","authors":"C. Glacer, R. Laur, A. Dehé, D. Tumpold","doi":"10.1109/PRIME.2013.6603131","DOIUrl":"https://doi.org/10.1109/PRIME.2013.6603131","url":null,"abstract":"This paper introduces a way to increase the airgap of a capacitive MEMS sensor or actuator. Usually, a thicker sacrificial layer composed of silicon dioxide is used to increase the distance between two parallel plates. In our case, both poly-silicon planes are being produced with a small gap filled with silicon dioxide. Corrugation grooves lined with highly tensile silicon nitride cause a stress induced displacement of the stator after the release etch was done. We will present first results, gained from FEM-simulations and fabricated wafers. An insight into the optimization of the deflection profile and the mechanical stability of the buckling electrode is discussed.","PeriodicalId":125553,"journal":{"name":"Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134159488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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