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Electrochemical and Solid State Letters最新文献

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Conformal Cu Seed Layer Formation by Electroless Deposition in Non-Bosch through Silicon Vias 非博世硅孔化学沉积共形铜种层的研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.009206ESL
K. Park, M. Kim, T. Lim, H. Koo, J. J. Kim
{"title":"Conformal Cu Seed Layer Formation by Electroless Deposition in Non-Bosch through Silicon Vias","authors":"K. Park, M. Kim, T. Lim, H. Koo, J. J. Kim","doi":"10.1149/2.009206ESL","DOIUrl":"https://doi.org/10.1149/2.009206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90856516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors 低温溶胶-凝胶氧化锌锡薄膜晶体管的紫外光退火工艺
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.013204ESL
Y. Hwang, S. Seo, J. J. Jeon, B. S. Bae
{"title":"Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors","authors":"Y. Hwang, S. Seo, J. J. Jeon, B. S. Bae","doi":"10.1149/2.013204ESL","DOIUrl":"https://doi.org/10.1149/2.013204ESL","url":null,"abstract":"C using an ultraviolet(UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to theincorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealingimprove the electrical performance of the ZTO TFT with mobility of 2 cm","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"250 1","pages":"91-93"},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80707056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 49
Direct Determination of Oxide Surface Free Energy through Potentiometric Measurements 用电位法直接测定氧化物表面自由能
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.011201ESL
Kevin Croué, J. Jolivet, D. Larcher
{"title":"Direct Determination of Oxide Surface Free Energy through Potentiometric Measurements","authors":"Kevin Croué, J. Jolivet, D. Larcher","doi":"10.1149/2.011201ESL","DOIUrl":"https://doi.org/10.1149/2.011201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86334797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution 不同氢稀释度HWCVD在aic -种子层外延增厚多晶硅薄膜
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.014203ESL
J. Hwang, Li-Shang Lin, T. Hsueh, S. Hwang
{"title":"Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution","authors":"J. Hwang, Li-Shang Lin, T. Hsueh, S. Hwang","doi":"10.1149/2.014203ESL","DOIUrl":"https://doi.org/10.1149/2.014203ESL","url":null,"abstract":"A thickening polycrystalline silicon (pc-Si) layer with a grain size of 35 μm was grown on an aluminum-induced crystallization (AIC) Si film, with low and high hydrogen dilution. An AIC seed layer was grown on a glass substrate, and a pc-Si epitaxial layer was deposited on it at 450◦C by hot-wire chemical vapor deposition. The AIC seed layer exhibits a highly crystalline structure and enhances the growth of the pc-Si layer. The crystalline fraction (93%) with high hydrogen dilution was larger than that (21%) with low hydrogen dilution, owing to low activation energy for nucleation and grain growth. © 2011 The Electrochemical Society. [DOI: 10.1149/2.014203esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83660257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Three-Dimensional Reconstruction of a LiCoO2 Li-Ion Battery Cathode LiCoO2锂离子电池正极的三维重建
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.002203ESL
T. Hutzenlaub, S. Thiele, R. Zengerle, C. Ziegler
{"title":"Three-Dimensional Reconstruction of a LiCoO2 Li-Ion Battery Cathode","authors":"T. Hutzenlaub, S. Thiele, R. Zengerle, C. Ziegler","doi":"10.1149/2.002203ESL","DOIUrl":"https://doi.org/10.1149/2.002203ESL","url":null,"abstract":"Experimental To obtain the electrode material used in this work, a new VARTA LIC 18650 WC lithium-ion battery was unsealed and dismantled. After evaporation of the electrolyte, a piece was extracted from the cathodeandpreparedforFIB/SEMbysputteringaplatinumlayeronto the surface of the sample to gain a more planar area as a starting point for the FIB. Additionally, two reference lines, one orthogonal and the other with an angle of 48.2 ◦ in relation to the cutting plane, were imprinted into the platinum layer, providing a method independent of surface skew or irregularities to determine slice thickness (Fig. 1). With the help of an FEI Quanta three-dimensional dual-beam FIBSEM at Fraunhofer IZM, Berlin, a cavity was cut into the sample as a starting point and subsequently one side of the cuboid was ablated slice by slice, while the SEM, with an angle of 38 ◦ relative to the sample surface, generated one image per slice.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83176457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 87
Alkaline Fuel Cell Membranes from Electrospun Fiber Mats 电纺纤维垫制备的碱性燃料电池膜
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.010203ESL
Andrew M. Park, P. Pintauro
{"title":"Alkaline Fuel Cell Membranes from Electrospun Fiber Mats","authors":"Andrew M. Park, P. Pintauro","doi":"10.1149/2.010203ESL","DOIUrl":"https://doi.org/10.1149/2.010203ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"101 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79944618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry H2O2和2-MT对酸浆中钴附着层化学机械抛光的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.017204ESL
Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wenjun Zhang, X. Qu
{"title":"The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry","authors":"Hai-Sheng Lu, Jing-Xuan Wang, Xu Zeng, Fei Chen, Xiao-Meng Zhang, Wenjun Zhang, X. Qu","doi":"10.1149/2.017204ESL","DOIUrl":"https://doi.org/10.1149/2.017204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"11 7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83509209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
SnSe Nanoparticles Anchored on TiO2 Nanotube Arrays by Pulsed Electrochemical Deposition 脉冲电化学沉积在TiO2纳米管阵列上的SnSe纳米颗粒
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.003201ESL
Y. Liang, Z. Cui, S. L. Zhu, X. J. Yang
{"title":"SnSe Nanoparticles Anchored on TiO2 Nanotube Arrays by Pulsed Electrochemical Deposition","authors":"Y. Liang, Z. Cui, S. L. Zhu, X. J. Yang","doi":"10.1149/2.003201ESL","DOIUrl":"https://doi.org/10.1149/2.003201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86907603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
In Situ Optical Emission Spectrometry during Porous Anodic Alumina Initiation and Growth in Phosphoric Acid 多孔阳极氧化铝在磷酸中起始和生长的原位光学发射光谱研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.009201ESL
Q. Overmeere, D. Mercier, R. Santoro, J. Proost
{"title":"In Situ Optical Emission Spectrometry during Porous Anodic Alumina Initiation and Growth in Phosphoric Acid","authors":"Q. Overmeere, D. Mercier, R. Santoro, J. Proost","doi":"10.1149/2.009201ESL","DOIUrl":"https://doi.org/10.1149/2.009201ESL","url":null,"abstract":"We report on the use of in-situ optical emission spectrometry to monitor the Al3+ loss rate during the anodic oxidation of aluminum in phosphoric acid. Three distinct stages were observed, the highest rate being measured during barrier layer growth. The evolution of the loss rate is markedly different from the evolution previously reported for sulfuric acid anodizing. We speculate that this may be related to the different pore morphologies obtained in these electrolytes. Our measurements also indicate that below 2 mA/cm2, field-assisted dissolution is the predominant contribution to Al3+ loss, while direct cation ejection is predominant at higher current densities.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86503930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory 掺氮Si0.6Sb2Te3材料在相变存储器中的应用
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.022204ESL
Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu
{"title":"N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory","authors":"Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu","doi":"10.1149/2.022204ESL","DOIUrl":"https://doi.org/10.1149/2.022204ESL","url":null,"abstract":"Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76479633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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