发布求助
文献互助 智能选刊 最新文献

Electrochemical and Solid State Letters最新文献

筛选
英文 中文
Electric Field Accelerating Interface Diffusion in Cu/Ru/TaN/Si Stacks during Annealing 退火过程中电场加速Cu/Ru/TaN/Si堆叠界面扩散
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.023206ESL
L. Wang, Z. Cao, J. Syed, K. Hu, Q. She, X. Meng
{"title":"Electric Field Accelerating Interface Diffusion in Cu/Ru/TaN/Si Stacks during Annealing","authors":"L. Wang, Z. Cao, J. Syed, K. Hu, Q. She, X. Meng","doi":"10.1149/2.023206ESL","DOIUrl":"https://doi.org/10.1149/2.023206ESL","url":null,"abstract":"Interface diffusion in Cu/Ru/TaN/Si stacks was investigated at different temperatures with and without electric field. It was found that electric field annealing accelerated the interface diffusion of Cu/Ru/TaN/Si. The accelerated interface diffusion is attributed to the accelerated mobility of vacancies and atoms by external electric field. A stronger accelerating effect was found on Ru/TaN interface, which resulted from accelerated N atom diffusion and the polarization of vacancies in TaN layer. © 2012 The Electrochemical Society. [DOI: 10.1149/2.023206esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"11 39","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.023206ESL","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72416310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Cu Contamination of the nMOSFET in a 3-D Integrated Circuit under Thermal and Electrical Stress 热应力和电应力下三维集成电路中nMOSFET的Cu污染
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.018205ESL
Han-Wool Yeon, Sung-Yup Jung, Jung-ryul Lim, J. Pyun, Hyungwook Kim, Dohyun Baek, Young‐Chang Joo
{"title":"Cu Contamination of the nMOSFET in a 3-D Integrated Circuit under Thermal and Electrical Stress","authors":"Han-Wool Yeon, Sung-Yup Jung, Jung-ryul Lim, J. Pyun, Hyungwook Kim, Dohyun Baek, Young‐Chang Joo","doi":"10.1149/2.018205ESL","DOIUrl":"https://doi.org/10.1149/2.018205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73076349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
One-Step Infiltration of Mixed Conducting Electrocatalysts for Reducing Cathode Polarization of a Commercial Cathode-Supported SOFC 混合导电电催化剂一步渗透降低商用阴极负载SOFC阴极极化
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.007201ESL
Nansheng Xu, Xue Li, Xuan Zhao, Hailei Zhao, Kevin Huang
{"title":"One-Step Infiltration of Mixed Conducting Electrocatalysts for Reducing Cathode Polarization of a Commercial Cathode-Supported SOFC","authors":"Nansheng Xu, Xue Li, Xuan Zhao, Hailei Zhao, Kevin Huang","doi":"10.1149/2.007201ESL","DOIUrl":"https://doi.org/10.1149/2.007201ESL","url":null,"abstract":"Infiltrating fine-grained electrocatalyst particles of either ion conducting or mixed electron and ion conducting (MEIC) material into a ceramic porous electrode scaffold has proven a very effective way to improve electrode performance for low to intermediate temperature solid oxide fuel cells (SOFCs). We report here one-step infiltration of MEIC fine particles, La0.6Sr0.4CoO3-δ (LSCo) and SrCo0.8Fe0.2O3-δ (SCF), into a commercial cathode substrate. A comparative study shows that the cathode polarization can be considerably reduced by a factor of 17 to 28 and 28 to 49 from 1000 to 700 ◦ C by the infiltrated LSCF and SCF electrocatalysts, respectively, demonstrating an effective solution to improve the electrode performance without altering mechanical properties of the electrode substrate.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75638376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material TiN材料掺杂剂活化及热稳定性的低温微波退火工艺
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.013206ESL
B. Tsai, C. Lai, Bouen Lee, C. Luo, Yao-Jen Lee
{"title":"Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material","authors":"B. Tsai, C. Lai, Bouen Lee, C. Luo, Yao-Jen Lee","doi":"10.1149/2.013206ESL","DOIUrl":"https://doi.org/10.1149/2.013206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78279705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Electrolytes and Membranes on Cell Operation for Syn-Gas Production 电解液和膜对合成气生产电池运行的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.010204ESL
Eric J. Dufek, T. Lister, M. Mcilwain
{"title":"Influence of Electrolytes and Membranes on Cell Operation for Syn-Gas Production","authors":"Eric J. Dufek, T. Lister, M. Mcilwain","doi":"10.1149/2.010204ESL","DOIUrl":"https://doi.org/10.1149/2.010204ESL","url":null,"abstract":"The impact of membrane type and electrolyte composition for the electrochemical generation of synthesis gas (CO + H2) using a Ag gas diffusion electrode are presented. Changing from a cation exchange membrane to an anion exchange membrane (AEM) extended the cell operational time at low Ecell values (up to 4x) without impacting product composition. The use of KOH as the catholyte decreased the Ecell and resulted in a minimum electrolyte cost reduction of 39%. The prime factor in determining operational time at low Ecell values was the ability to maintain a sufficiently high anolyte pH.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74905362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition 原子层沉积法提高铝掺杂HfO2薄膜的阻性开关稳定性
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.011204ESL
Ching-Shiang Peng, W. Chang, Yi-Hsuan Lee, M. Lin, Frederick T. Chen, M. Tsai
{"title":"Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition","authors":"Ching-Shiang Peng, W. Chang, Yi-Hsuan Lee, M. Lin, Frederick T. Chen, M. Tsai","doi":"10.1149/2.011204ESL","DOIUrl":"https://doi.org/10.1149/2.011204ESL","url":null,"abstract":"This study investigates an optimized uniformity of Al-doped HfO2 resistive random access memory (RRAM) device. The Al-doped HfO2 RRAM devices in this study exhibit excellent uniformity and stable resistive switching behavior. This is due to the formation of Hf-O-Al bonding to reduce the oxygen vacancy formation energy. An Arrhenius plot shows that the difference in activation energy caused by doping effects can be attributed to a Fermi level shift, which in turn decreases the resistance of the high resistance state. The temperature-dependent retention test makes it possible to predict the data storage capability of the Al-doped HfO2 resistive RRAM device. © 2012 The Electrochemical Society. [DOI: 10.1149/2.011204esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"122 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77948001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Hysteresis of In Situ CCVD Grown Graphene Transistors 原位CCVD生长石墨烯晶体管的磁滞特性
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.019204ESL
P. Wessely, Frank Wessely, Emrah Birinci, Bernadette Riedinger, U. Schwalke
{"title":"Hysteresis of In Situ CCVD Grown Graphene Transistors","authors":"P. Wessely, Frank Wessely, Emrah Birinci, Bernadette Riedinger, U. Schwalke","doi":"10.1149/2.019204ESL","DOIUrl":"https://doi.org/10.1149/2.019204ESL","url":null,"abstract":"In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene field-effect transistors (BiLGFETs) are realized directly on oxidized silicon substrate. In situ CCVD grown BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1 × 10 7 . With this novel fabrication method hundreds of large scale in situ CCVD grown graphene FETs are realized simultaneously on one 2’’ wafer in a silicon CMOS compatible process.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"235 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73168898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Electrodes for Solid Oxide Fuel Cells Based on Infiltration of Co-Based Materials 基于co基材料渗透的固体氧化物燃料电池电极
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.020204ESL
A. Samson, M. Søgaard, N. Bonanos
{"title":"Electrodes for Solid Oxide Fuel Cells Based on Infiltration of Co-Based Materials","authors":"A. Samson, M. Søgaard, N. Bonanos","doi":"10.1149/2.020204ESL","DOIUrl":"https://doi.org/10.1149/2.020204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"249 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75953679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere ZnO薄膜带边态随退火环境气氛的热演化
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.005205ESL
Hyun Woo Park, Jin-seong Park, J. Lee, K. Chung
{"title":"Thermal Evolution of Band Edge States in ZnO Film as a Function of Annealing Ambient Atmosphere","authors":"Hyun Woo Park, Jin-seong Park, J. Lee, K. Chung","doi":"10.1149/2.005205ESL","DOIUrl":"https://doi.org/10.1149/2.005205ESL","url":null,"abstract":"RF-sputtered ZnO films were annealed under various annealing ambient atmospheres, including a vacuum, air, and water vapor. The physical and electrical properties of ZnO films annealed in various ambient atmospheres, were studied as a function of annealing temperature. The carrier concentration was dramatically increased, and the mobility was decreased when the films were annealed in a vacuum or water vapor. Even though the annealing ambient atmosphere and temperature were different, the preferred orientation and crystallization of the annealed ZnO films are maintained. However, two distinct band edge states below the conduction band, observed by spectroscopic ellipsometry measurement, undergo a thermal change as a function of annealing ambient atmosphere and these changes are correlated to changes in carrier concentration and mobility.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"81 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74242910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process 无毒溶胶-凝胶法制备高透明p型ZnO薄膜
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.025206ESL
C. Chuang, Wenjun Wang, Chung-Yen Wang, W. Tseng, Chih‐I Wu
{"title":"Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process","authors":"C. Chuang, Wenjun Wang, Chung-Yen Wang, W. Tseng, Chih‐I Wu","doi":"10.1149/2.025206ESL","DOIUrl":"https://doi.org/10.1149/2.025206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87606785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信