Electrochemical and Solid State Letters最新文献

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Electroless Deposition of Bismuth Containing Films on Copper and Silver Substrates from KBiI4 Solutions KBiI4溶液在铜和银基底上化学沉积含铋薄膜
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.ESL113444
S. Djokić, K. Prashanthi, T. Thundat
{"title":"Electroless Deposition of Bismuth Containing Films on Copper and Silver Substrates from KBiI4 Solutions","authors":"S. Djokić, K. Prashanthi, T. Thundat","doi":"10.1149/2.ESL113444","DOIUrl":"https://doi.org/10.1149/2.ESL113444","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86507890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Stress Contributions to Solution Thermodynamics in Li-Si Alloys 应力对Li-Si合金溶液热力学的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.016201ESL
B. Sheldon, S. Soni, Xingcheng Xiao, Y. Qi
{"title":"Stress Contributions to Solution Thermodynamics in Li-Si Alloys","authors":"B. Sheldon, S. Soni, Xingcheng Xiao, Y. Qi","doi":"10.1149/2.016201ESL","DOIUrl":"https://doi.org/10.1149/2.016201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88298336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 74
Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application 晶圆切割对MEMS异质外延3C-SiC薄膜的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.015206ESL
R. Anzalone, M. Camarda, A. Auditore, N. Piluso, A. Severino, A. Magna, G. D'Arrigo, F. Via
{"title":"Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application","authors":"R. Anzalone, M. Camarda, A. Auditore, N. Piluso, A. Severino, A. Magna, G. D'Arrigo, F. Via","doi":"10.1149/2.015206ESL","DOIUrl":"https://doi.org/10.1149/2.015206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90931652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Effect of Fluoroethylene Carbonate Additive on Low Temperature Performance of Li-Ion Batteries 碳酸氟乙烯添加剂对锂离子电池低温性能的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.027206ESL
Bingxiao Liu, Bing Li, S. Guan
{"title":"Effect of Fluoroethylene Carbonate Additive on Low Temperature Performance of Li-Ion Batteries","authors":"Bingxiao Liu, Bing Li, S. Guan","doi":"10.1149/2.027206ESL","DOIUrl":"https://doi.org/10.1149/2.027206ESL","url":null,"abstract":"The effects of Fluoroethylene carbonate (FEC) on the low temperature performance of Li-ion batteries were evaluated. By addition of 2 v% FEC into a commercial ternary electrolyte, the initial lithium intercalation capacity (graphite/Li model cell) was remarkably improved by approximately 50% and the voltage plateau of the cell was lowered by about 0.2 V at −20°C. This is maybe attributed to a reduced charge transfer resistance and a lowered SEI film resistance with a richer LiF phase formed on the graphite electrode by Tafel polarization, AC impedance and X-ray photoelectron spectroscopy (XPS) analysis.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81638265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 60
An Investigation of the Different Charge Trapping Mechanisms for SiNx and SiO2 Gate Insulator in a-IGZO TFTs a-IGZO TFTs中SiNx和SiO2栅极绝缘子不同电荷捕获机制的研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.003204ESL
Young Wook Lee, Sun‐Jae Kim, Soo‐Yeon Lee, Woo-Geun Lee, Kap‐soo Yoon, Jaewoo Park, M. Han
{"title":"An Investigation of the Different Charge Trapping Mechanisms for SiNx and SiO2 Gate Insulator in a-IGZO TFTs","authors":"Young Wook Lee, Sun‐Jae Kim, Soo‐Yeon Lee, Woo-Geun Lee, Kap‐soo Yoon, Jaewoo Park, M. Han","doi":"10.1149/2.003204ESL","DOIUrl":"https://doi.org/10.1149/2.003204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82173863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Electrochemical Detection of Sodium Borohydride in Alkaline Media by Gold Electrode 碱性介质中硼氢化钠的金电极电化学检测
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.004204ESL
Junbo Hou, M. Ellis, R. Moore
{"title":"Electrochemical Detection of Sodium Borohydride in Alkaline Media by Gold Electrode","authors":"Junbo Hou, M. Ellis, R. Moore","doi":"10.1149/2.004204ESL","DOIUrl":"https://doi.org/10.1149/2.004204ESL","url":null,"abstract":"Direct borohydride fuel cells (DBFC) are emerging as a promising technology for portable power. The characteristics of a gold electrochemical sensor for detecting borohydride concentration were investigated. Although gold is not Faradically efficient for the borohydride oxidation, the peak current obtained from cyclic voltammetry (CV) showed a linear relationship in the investigated range of 0.1 mM–50 mM borohydride concentration with a detect limitation of 50 μM, suggesting the same charge transfer mechanism within the investigated concentration range. Chronoamperometry results demonstrated a fast signal response, and the sensitivity was determined as 1.56 ± 0.13 μA/100 μM based on the present disk electrode. © 2012 The Electrochemical Society. [DOI: 10.1149/2.004204esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83253079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Metal-Support Interaction of Pt Nanoparticles with Ionically and Non-Ionically Conductive Supports for CO Oxidation 金属-载体Pt纳米粒子与离子和非离子导电载体对CO氧化的相互作用
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.024203ESL
R. Isaifan, H. Dole, Emil Obeid, L. Lizarraga, P. Vernoux, E. Baranova
{"title":"Metal-Support Interaction of Pt Nanoparticles with Ionically and Non-Ionically Conductive Supports for CO Oxidation","authors":"R. Isaifan, H. Dole, Emil Obeid, L. Lizarraga, P. Vernoux, E. Baranova","doi":"10.1149/2.024203ESL","DOIUrl":"https://doi.org/10.1149/2.024203ESL","url":null,"abstract":"Platinum nanoparticles of narrow size distribution (~2.5 nm) were synthesized using a modified polyol method and deposited on yttria-stabilized zirconia (Pt/YSZ), carbon (Pt/C) and γ-alumina (Pt/γ-Al2O3) supports, resulting in 1 wt % of Pt loading. Pt/YSZ has the highest catalytic activity toward CO oxidation among the studied catalysts. Decrease in the average particle size of Pt/YSZ led to the increase in CO conversion at low temperatures. Enhanced performances can be explained by the thermally induced O2− backspillover from YSZ over Pt nanoparticles in agreement with the electrochemical promotion mechanism. Observed effect becomes more pronounced with decreasing the particle size.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88619271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Effect of Charge Trapping/Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress 交流偏压下电荷捕获/去捕获对IGZO TFTs阈值电压偏移的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.026204ESL
Sun‐Jae Kim, S. Lee, Young‐Wook Lee, Seung‐Hee Kuk, J. Kwon, M. Han
{"title":"Effect of Charge Trapping/Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress","authors":"Sun‐Jae Kim, S. Lee, Young‐Wook Lee, Seung‐Hee Kuk, J. Kwon, M. Han","doi":"10.1149/2.026204ESL","DOIUrl":"https://doi.org/10.1149/2.026204ESL","url":null,"abstract":"We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (VTH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of VTH shift was considered the charge trapping and VTH shift along with time was well fitted to a stretched-exponential model. The VTH shift was suppressed with a reduction of trap density by employing N2O plasma treatment on the gate insulator.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91208851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Carrier-Suppressing Effect of Mg in Solution-Processed Zn-Sn-O Thin-Film Transistors Mg在溶液处理Zn-Sn-O薄膜晶体管中的载流子抑制作用
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.012203ESL
H. Lim, Y. Rim, Dong Lim Kim, W. Jeong, Hyun Jae Kim
{"title":"Carrier-Suppressing Effect of Mg in Solution-Processed Zn-Sn-O Thin-Film Transistors","authors":"H. Lim, Y. Rim, Dong Lim Kim, W. Jeong, Hyun Jae Kim","doi":"10.1149/2.012203ESL","DOIUrl":"https://doi.org/10.1149/2.012203ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"61 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84042864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer 氮化铬缓冲层对氮化镓在6H-SiC上氢化物气相外延生长的表面极性影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.014205ESL
J. Park, H. Lee, S. W. Lee, J. Ha, S. Nagata, S. Hong, H. Lee, M. Cho, T. Yao
{"title":"Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer","authors":"J. Park, H. Lee, S. W. Lee, J. Ha, S. Nagata, S. Hong, H. Lee, M. Cho, T. Yao","doi":"10.1149/2.014205ESL","DOIUrl":"https://doi.org/10.1149/2.014205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87647672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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