发布求助
文献互助 智能选刊 最新文献

Electrochemical and Solid State Letters最新文献

筛选
英文 中文
HfSiON High-k Layer Compatibility Study with TetraMethyl Ammonium Hydroxide (TMAH) Solution HfSiON与四甲基氢氧化铵(TMAH)溶液的高k层相容性研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.008205ESL
T. Yang, Chao Zhao, Gaobo Xu, Q. Xu, J. Li, W. W. Wang, J. Yan, H. Zhu, D. P. Chen
{"title":"HfSiON High-k Layer Compatibility Study with TetraMethyl Ammonium Hydroxide (TMAH) Solution","authors":"T. Yang, Chao Zhao, Gaobo Xu, Q. Xu, J. Li, W. W. Wang, J. Yan, H. Zhu, D. P. Chen","doi":"10.1149/2.008205ESL","DOIUrl":"https://doi.org/10.1149/2.008205ESL","url":null,"abstract":"Compatibility of HfSiON high-k layer with wet etching using TMAH solution is studied for polycrystalline silicon dummy gate removal in high-k first gate-last process. The electrical and physical characterizations of the HfSiON layers after etching reveal that the HfSiON layer will be etched when exposed to the TMAH solution under certain conditions. No clear degradation, however, has been found after etching in a 10 vol% TMAH solution below 60◦C, suggesting a processing window for polycrystalline silicon dummy gate removal in the high-k first metal gate last process. © 2012 The Electrochemical Society. [DOI: 10.1149/2.008205esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"83 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83765203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Sensitizing Eu3+ with Ce3+ and Tb3+ to Make Narrow-Line Red Phosphors for Light Emitting Diodes 用Ce3+和Tb3+敏化Eu3+制备发光二极管用窄线红色荧光粉
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.022206ESL
A. Setlur
{"title":"Sensitizing Eu3+ with Ce3+ and Tb3+ to Make Narrow-Line Red Phosphors for Light Emitting Diodes","authors":"A. Setlur","doi":"10.1149/2.022206ESL","DOIUrl":"https://doi.org/10.1149/2.022206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88212460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 61
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor 原子层沉积制备的HfO2薄膜与NH3蒸气后氮化InP衬底之间的界面反应
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.008204ESL
Y. Kang, C. Kim, M. Cho, C. An, Hyunyub Kim, J. Seo, C. S. Kim, T. Lee, D. Ko
{"title":"Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor","authors":"Y. Kang, C. Kim, M. Cho, C. An, Hyunyub Kim, J. Seo, C. S. Kim, T. Lee, D. Ko","doi":"10.1149/2.008204ESL","DOIUrl":"https://doi.org/10.1149/2.008204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75812361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Improvement of Heat Resistance of Hydrogen Doped ZnO:Ga Thin Films 氢掺杂ZnO:Ga薄膜耐热性能的提高
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.021204ESL
Cheng-chung Lee, Meng-Chi Li, Weihan Sun, C. Kuo
{"title":"Improvement of Heat Resistance of Hydrogen Doped ZnO:Ga Thin Films","authors":"Cheng-chung Lee, Meng-Chi Li, Weihan Sun, C. Kuo","doi":"10.1149/2.021204ESL","DOIUrl":"https://doi.org/10.1149/2.021204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74337450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of SiO2 Layer on the Dielectric Function of Gold Nanoparticles on Si Substrate SiO2层对Si衬底上金纳米颗粒介电功能的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.021201ESL
S. Zhu, Tupei Chen, Y. Liu, Yingli Liu, S. Yu
{"title":"Influence of SiO2 Layer on the Dielectric Function of Gold Nanoparticles on Si Substrate","authors":"S. Zhu, Tupei Chen, Y. Liu, Yingli Liu, S. Yu","doi":"10.1149/2.021201ESL","DOIUrl":"https://doi.org/10.1149/2.021201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73148871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrophoresis Deposition of TiO2 Nanoparticles on Etched Aluminum Foil for Enhanced Specific Capacitance 在蚀刻铝箔上电泳沉积TiO2纳米粒子以增强比电容
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.013201ESL
Lan Sun, Junfu Bu, Wenxi Guo, Yingying Wang, Mengye Wang, Changjian Lin
{"title":"Electrophoresis Deposition of TiO2 Nanoparticles on Etched Aluminum Foil for Enhanced Specific Capacitance","authors":"Lan Sun, Junfu Bu, Wenxi Guo, Yingying Wang, Mengye Wang, Changjian Lin","doi":"10.1149/2.013201ESL","DOIUrl":"https://doi.org/10.1149/2.013201ESL","url":null,"abstract":"2011, Volume 15, Issue 1, Pages E1-E3. Electrochem. Solid-State Lett. Lan Sun, Junfu Bu, Wenxi Guo, Yingying Wang, Mengye Wang and Changjian Lin Etched Aluminum Foil for Enhanced Specific Capacitance Nanoparticles on 2 Electrophoresis Deposition of TiO service Email alerting click here in the box at the top right corner of the article or Receive free email alerts when new articles cite this article sign up","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78252101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High Ionic Conductivity Lithium Garnet Oxides of Li7−xLa3Zr2−xTaxO12 Compositions Li7−xLa3Zr2−xTaxO12组合物的高离子电导率锂石榴石氧化物
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.024205ESL
Yuxing Wang, Wei Lai
{"title":"High Ionic Conductivity Lithium Garnet Oxides of Li7−xLa3Zr2−xTaxO12 Compositions","authors":"Yuxing Wang, Wei Lai","doi":"10.1149/2.024205ESL","DOIUrl":"https://doi.org/10.1149/2.024205ESL","url":null,"abstract":"Lithium garnet oxides of the composition series Li7−xLa3Zr2−xTaxO12 (x = 0−2) were synthesized by the solid state reaction and characterized by the powder X-ray diffraction and the impedance spectroscopy. Single cubic phases were obtained between x = 0.2 and 2, while the end-member Li7La3Zr2O12 exhibited a tetragonal phase. The lattice parameters of the cubic series followed the Vegard’s law. The maximum bulk (9.6 × 10−4 S/cm) and total (6.9 × 10−4 S/cm) conductivities were achieved at x = 0.3 and x = 0.2, respectively at room temperature. Electrochemical tests with a hybrid solid|liquid electrolyte configuration were performed to evaluate the electrochemical performance of the solid electrolytes. © 2012 The Electrochemical Society. [DOI: 10.1149/2.024205esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81633256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 126
Nanodiamonds Embedded in P3HT:PCBM for Enhancing Efficiency and Reliability of Hybrid Photovoltaics 纳米金刚石嵌入P3HT:PCBM以提高混合光电的效率和可靠性
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.006204ESL
Y. Hsiao, T. Fang, L. Ji, Yu-Chao Lee, B. Dai
{"title":"Nanodiamonds Embedded in P3HT:PCBM for Enhancing Efficiency and Reliability of Hybrid Photovoltaics","authors":"Y. Hsiao, T. Fang, L. Ji, Yu-Chao Lee, B. Dai","doi":"10.1149/2.006204ESL","DOIUrl":"https://doi.org/10.1149/2.006204ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89286899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure ZnO-纳米棒/ZnO: as膜结构的同结发光二极管的制备
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.020205ESL
Jingchang Sun, J. Bian, Yan Wang, Yuxin Wang, Yu Gong, Yang Li, Kuichao Liu, Sailu Zhang, Yuanda Liu, H. Liang, G. Du, N. Yu
{"title":"Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure","authors":"Jingchang Sun, J. Bian, Yan Wang, Yuxin Wang, Yu Gong, Yang Li, Kuichao Liu, Sailu Zhang, Yuanda Liu, H. Liang, G. Du, N. Yu","doi":"10.1149/2.020205ESL","DOIUrl":"https://doi.org/10.1149/2.020205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90342681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks HfO2/Ti1-xNx栅极堆n- mosfet栅极感应漏极电流的热载子效应
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.001206ESL
Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang
{"title":"Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks","authors":"Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang","doi":"10.1149/2.001206ESL","DOIUrl":"https://doi.org/10.1149/2.001206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90566610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信