HfO2/Ti1-xNx栅极堆n- mosfet栅极感应漏极电流的热载子效应

Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang
{"title":"HfO2/Ti1-xNx栅极堆n- mosfet栅极感应漏极电流的热载子效应","authors":"Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang","doi":"10.1149/2.001206ESL","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks\",\"authors\":\"Chih-Hao Dai, T. Chang, A. Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, G. Xia, O. Cheng, Cheng-Tung Huang\",\"doi\":\"10.1149/2.001206ESL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":11627,\"journal\":{\"name\":\"Electrochemical and Solid State Letters\",\"volume\":\"39 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrochemical and Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.001206ESL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.001206ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Electrochemical and Solid State Letters
Electrochemical and Solid State Letters 工程技术-材料科学:综合
自引率
0.00%
发文量
0
审稿时长
1.9 months
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信