发布求助
文献互助 智能选刊 最新文献

Electrochemical and Solid State Letters最新文献

筛选
英文 中文
Synthesis of Cubic Phase Li7La3Zr2O12 Electrolyte for Solid-State Lithium-Ion Batteries 固态锂离子电池用立方相Li7La3Zr2O12电解质的合成
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.003203ESL
Jiajia Tan, A. Tiwari
{"title":"Synthesis of Cubic Phase Li7La3Zr2O12 Electrolyte for Solid-State Lithium-Ion Batteries","authors":"Jiajia Tan, A. Tiwari","doi":"10.1149/2.003203ESL","DOIUrl":"https://doi.org/10.1149/2.003203ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"78 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.003203ESL","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72444885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese 双(乙基环戊二烯基)锰在多孔SiCOH低钾电介质上化学气相沉积锰的研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.006206ESL
N. Jourdan, M. Krishtab, M. Baklanov, J. Meersschaut, Christopher J. Wilson, J. Ablett, E. Fonda, L. Zhao, S. Elshocht, Z. Tokei, E. Vancoille
{"title":"Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese","authors":"N. Jourdan, M. Krishtab, M. Baklanov, J. Meersschaut, Christopher J. Wilson, J. Ablett, E. Fonda, L. Zhao, S. Elshocht, Z. Tokei, E. Vancoille","doi":"10.1149/2.006206ESL","DOIUrl":"https://doi.org/10.1149/2.006206ESL","url":null,"abstract":"MnO/MnSiO3-based layers were formed on porous SiCOH low-k dielectrics by Chemical Vapor Deposition (CVD) of Mn from Bisethylcyclopentadienyl manganese. The oxide phase formation is driven by the moisture desorbing from the low-k films. The silicate phase is defined by silanol groups chemisorbed on the low-k surface. The experimental results suggest that formation of thin Mn-based copper diffusion barrier (pore sealing) by CVD is limited to dielectrics having a pore size smaller than the Mn precursor molecules. In the case of larger pore sizes, Mn is deposited inside the dielectric on the pores surface and the layer cannot be a diffusion barrier. © 2012 The Electrochemical Society. [DOI: 10.1149/2.006206esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"274 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74950265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Oxygen Reduction Reaction of Pt Supported on Y-Doped SrTiO3 y掺杂SrTiO3负载Pt的氧还原反应
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.017205ESL
Kug‐Seung Lee, Songkil Yoo, Y. Nah, Hee Su Kim, K. Park, J. Yun
{"title":"Oxygen Reduction Reaction of Pt Supported on Y-Doped SrTiO3","authors":"Kug‐Seung Lee, Songkil Yoo, Y. Nah, Hee Su Kim, K. Park, J. Yun","doi":"10.1149/2.017205ESL","DOIUrl":"https://doi.org/10.1149/2.017205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77567417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Cu2-xSe Films Fabricated by the Low-Temperature Electrophoretic Deposition 低温电泳沉积制备Cu2-xSe薄膜
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.001201ESL
C. Ting, Wen Lee
{"title":"Cu2-xSe Films Fabricated by the Low-Temperature Electrophoretic Deposition","authors":"C. Ting, Wen Lee","doi":"10.1149/2.001201ESL","DOIUrl":"https://doi.org/10.1149/2.001201ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"2012 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86409433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Electrical Characterization of Thin Films by an Original Micro-Electrode Calibration Method 基于微电极校准方法的薄膜电特性研究
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.029204ESL
N. Bailly, E. Djurado, S. Georges
{"title":"Electrical Characterization of Thin Films by an Original Micro-Electrode Calibration Method","authors":"N. Bailly, E. Djurado, S. Georges","doi":"10.1149/2.029204ESL","DOIUrl":"https://doi.org/10.1149/2.029204ESL","url":null,"abstract":"A method allowing the electrical characterization of ionic conducting films is described. This method is based on the calibration of the electrically active surface of a platinum micro-electrode. This method allows a significant decrease of instrumental or parasitic effects, the observation of dielectric relaxations at high temperature, the characterization of imperfectly tight layers, and gives an alternative to paint or sputtered Pt layer current collectors. © 2012 The Electrochemical Society. [DOI: 10.1149/2.029204esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87349367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material 基于snte掺杂Ge2Sb2Te5材料的高速相变存储器
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.006203ESL
Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng
{"title":"High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material","authors":"Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng","doi":"10.1149/2.006203ESL","DOIUrl":"https://doi.org/10.1149/2.006203ESL","url":null,"abstract":"SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90078388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k 氧化钼纳米点嵌入ZrHfO高k的记忆功能
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.020206ESL
Xi Liu, Chia-Han Yang, Y. Kuo, Tao Yuan
{"title":"Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k","authors":"Xi Liu, Chia-Han Yang, Y. Kuo, Tao Yuan","doi":"10.1149/2.020206ESL","DOIUrl":"https://doi.org/10.1149/2.020206ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81973020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory 扁平TiN电极对HfO2基电阻式存储器记忆性能的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.001205ESL
Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, T. Wu, P. Gu, Frederick T. Chen, M. Tsai
{"title":"Impact of Flattened TiN Electrode on the Memory Performance of HfO2 Based Resistive Memory","authors":"Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, T. Wu, P. Gu, Frederick T. Chen, M. Tsai","doi":"10.1149/2.001205ESL","DOIUrl":"https://doi.org/10.1149/2.001205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82225418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Emissive Transparent Luminescent Layer Using Shape Controlled YBO3:Eu3+ Nanophosphors Prepared by Solvothermal Reactions 利用溶剂热反应制备形状可控的YBO3:Eu3+纳米荧光粉发射透明发光层
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.016205ESL
Sungho Choi, B. Park, Jung-hyun Seo, Youngshik Jun, Ha-Kyun Jung
{"title":"Emissive Transparent Luminescent Layer Using Shape Controlled YBO3:Eu3+ Nanophosphors Prepared by Solvothermal Reactions","authors":"Sungho Choi, B. Park, Jung-hyun Seo, Youngshik Jun, Ha-Kyun Jung","doi":"10.1149/2.016205ESL","DOIUrl":"https://doi.org/10.1149/2.016205ESL","url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83427174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Influence of Sputtering Power on Phase-Change Films 溅射功率对相变膜的影响
Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI: 10.1149/2.024206ESL
Lei Zhang, L. Gu, Xiaodong Han, Huan Huang, Yanan Dai, Yan Cheng, Yang Wang, Zemin Zhang, Yi-qun Wu, Bo Liu, Zhitang Song
{"title":"The Influence of Sputtering Power on Phase-Change Films","authors":"Lei Zhang, L. Gu, Xiaodong Han, Huan Huang, Yanan Dai, Yan Cheng, Yang Wang, Zemin Zhang, Yi-qun Wu, Bo Liu, Zhitang Song","doi":"10.1149/2.024206ESL","DOIUrl":"https://doi.org/10.1149/2.024206ESL","url":null,"abstract":"Sputter-deposited amorphous films of a phase-change material (Ge2Sb2Te5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sp","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85842531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信