基于snte掺杂Ge2Sb2Te5材料的高速相变存储器

Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI:10.1149/2.006203ESL

Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng

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引用次数: 14

摘要

为了提高相变速度，提出了掺snte的Ge2Sb2Te5材料。可逆的相变可以通过短至30ns的电压脉冲来实现。由于SnTe的加入，激光诱导结晶速度加快。他也玩同样的游戏

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High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material

SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same

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来源期刊

Electrochemical and Solid State Letters 工程技术-材料科学：综合

自引率

0.00%

发文量

审稿时长

1.9 months