Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu
{"title":"掺氮Si0.6Sb2Te3材料在相变存储器中的应用","authors":"Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu","doi":"10.1149/2.022204ESL","DOIUrl":null,"url":null,"abstract":"Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"40 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory\",\"authors\":\"Cheng Peng, P. Yang, Liangcai Wu, Zhitang Song, F. Rao, Jian'an Xu, Xilin Zhou, Min Zhu, Bo Liu, J. Chu\",\"doi\":\"10.1149/2.022204ESL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N\",\"PeriodicalId\":11627,\"journal\":{\"name\":\"Electrochemical and Solid State Letters\",\"volume\":\"40 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrochemical and Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.022204ESL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.022204ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N
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