{"title":"Pipelined parallel bidirectional shift (PPB) architecture for high speed serial access","authors":"Y. Norooka, T. Kobayashi, K. Yasuda, M. Yanada","doi":"10.1109/VLSIC.1988.1037437","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037437","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122348935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new pipelined-subranging 8 bit 20MHz CMOS AD converter","authors":"K. Tsuji, S. Saitoh, S. Morinaga, T. Iida","doi":"10.1109/VLSIC.1988.1037456","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037456","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125662911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improvement of soft error rate in MOS SRAMs","authors":"S. Murakami, K. Ichinose, K. Anami, S. Kayano","doi":"10.1109/VLSIC.1988.1037422","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037422","url":null,"abstract":"I n t r o d u c t i o n Recently, the access time of VLSI CMOS SRAMS’.’.~ has come to the level of ECL RAMs. The a-particle induced soft error ia the SRAMs with high resistive load cell has been a serious problem, b c cause the soft error rate (SER) abruptly increases at the short cycle time ‘.‘. Although the SER is reduced by the increme of the capacitance in storage nodes, the scaled amnll cell area limits the increase of the capacitance. This paper proposes two unique improvement techniques with no extra ailicon area, and the SER is improved by 2 orders of magnitude.","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121733793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"1.5um CMOS gate arrays with analog/digital macros designed using the common base arrays","authors":"S. Kawada, Y. Hara, T. Isono, T. Inuzuka","doi":"10.1109/VLSIC.1988.1037424","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037424","url":null,"abstract":"Mixed analog and digital circuits are realized on a single chip of 1.5um rule, single t5V power supplied, si.licon gate, and 320 through 19600 cells CMOS digital gate arrays without any extension of turn-around time and any restriction of designing. Voltage comparator with input offset voltage of lOmV MAX. and response time of 60nsec. D/A converters and A/D converters with 4 bit, 6 bit, 8 bit respectively, and an analog switch with 250hm on-resistance can exist simultaneously with digital circuits. Using this technology, about 1/10 of turnaround time on system developments compared with full-custom LSIs can be achieved. INTRODUCTION I t is desired eagerly in the semi-custom LSI field to integrate a system on a single chip by establishing a mixture of analog and digital technologies. Up to this time, there are a few ways to create mixed analog and digital circuits; i.e., full-custom LSIs, standard cells, masterslice LSIs which have more than 2 channel length transistors for analog circuit parts and digital circuit parts. or gate array of which all base transistor arrays are long channel length type [ I ] , t21. Each of them have several weak points, for example long turn-around time, high development Cost, restriction of the ratio between analog circuit parts and digital circuit parts, very Poor digital circuit's performance, and so on. STRUCTURES Analog function blocks are produced on base transistor arrays of commonly used 1.5um rule, single +5V power.supplied, and silicon gate CMOS digital gate array series. This gate array series contains 16 masters with 320 through 19600 cells. Figure 1 shows a microphotograph of a chip including analog function blocks. All of analog circuits can be placed anywhere on the base transistor arrays with only a few consideration (ex. cross talk. noise etc.) like digital circuits. These analog function blocks are registered as hardware macros in function block libraries. PRODUCTS DEVELOPMENT FLOW Gate arrays including analog circuits are developed according to the flow chart shown in Figure 2 . Just the same development flow and CAD tools of designing gate arrays with only digital circuits are used. In case of circuit simulation, analog function blocks are treated as black boxes. And only connections between analog function blocks and other blocks are checked. In this way, the turn-around time from the end o f the circuit simulation to the supply of engineering sample of mixed analog and digital circuits is reduced to about 1/10 compared with fullcustom LSIs. VOLTAGE COUPARAT ORS short channel length unit transistors such as: Wp/Lp = 33um/1.8um All analog circuits are constructed with WN/LN = 33um/1.6um, Figure 3 shows one of the comparator's layout pattern. Input transistors of differential Stage uses two unit transistors each, and they are placed cross coupled with each other. And power supply wires are also placed equally for the input pair transistors. The comparator's layout is made under such consideration, a","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128912582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fast converging analog adaptive filter for general purpose noise canceller","authors":"T. Ritoniemi, T. Karema, H. Tenhunen","doi":"10.1109/VLSIC.1988.1037441","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037441","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123965427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Okada, Y. Hotta, R. Matsuyama, Y. Surninaga, J. Tanimoto, K. Nakahara, M. Takahi, H. Korniya, T. Ashida, K. Sane, A. Kunikane, R. Miyake
{"title":"16Mb ROM design using bank select architecture","authors":"M. Okada, Y. Hotta, R. Matsuyama, Y. Surninaga, J. Tanimoto, K. Nakahara, M. Takahi, H. Korniya, T. Ashida, K. Sane, A. Kunikane, R. Miyake","doi":"10.1109/VLSIC.1988.1037435","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037435","url":null,"abstract":"Market nee& for high density and shorter t u n around time (TAT) mask programmable ROM's I mask ROM's ) have increased rapidly due to the demand for storing the Kanji charseter fonts and dictionaries used in Japanese word pmcesso~s and storing the mftwere used in TV games. We have realized a mask ROM canfiguration which ratisfie. requirements far bath high density and shorter TAT by employing a new ROM cell I Flat cell I Structure and a bank Selection technique. This paper describes B high density 16M bi t inask ROM configuralion ( a block diagram is shown in F ig .1 I . As a type nf redundancy technique , a new concept of bypass technique for non-programmed ROM areas is described . A testability design named H V parity matrix teat-mode design is also described.","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126911199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-density quaternary logic array chip for knowledge information processing systeks","authors":"T. Hanyu, T. Higuchi","doi":"10.1109/VLSIC.1988.1037408","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037408","url":null,"abstract":"instance, production systemshave been observed to spend more than nine-tenths of its total run time performing the pattern matching. The knowledge information processing system requires high computational power and large memory capacity at low cost to make many kinds of real-time applications possible [ 1 I . This paper presents a new high-density quaternary logic array chip for high-speed pattern matching instead of depending on expensive and time-consuming software systems 121. A double pattern matching algorithm can be effectively employed for achieving greater densities on smaller semiconductor chips. The appropriate quaternary encoding for the contents of B working memory and a production memory can perform a double pattern matching. Four states for two-bit information concerning with two elements of a rule can be stored into a pattern matching cell using multiple ion implant technique which makes the threshold of the transistor programmable [ 3 ] , A9 a result, the pattern matching cell can be implemented by using only a single transistor. The number. of cells and transistors in the proposed logic array are reduced to 50% of the corresponding binary implementation. Moreover, the pattern matching operations can be performed in parallel, so that the processing time on each reasoning cycle can be provided by the propagation delay time of a single transistor. information processing system interpreters. For","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116152289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Okada, S. Takeuchi, M. Kimura, T. Kumamoto, N. Yazawa
{"title":"A multiplying encoder for digital signal processing","authors":"K. Okada, S. Takeuchi, M. Kimura, T. Kumamoto, N. Yazawa","doi":"10.1109/VLSIC.1988.1037443","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037443","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125280696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Ando, T. Okazawa, H. Furuta, M. Ohkaaa, J. Monden, N. Kodama, K. Are, H. Ishihara, I. Sasaki
{"title":"A 0.1/spl mu/A standby current, bouncing-noise-immune 1Mb SRAM","authors":"M. Ando, T. Okazawa, H. Furuta, M. Ohkaaa, J. Monden, N. Kodama, K. Are, H. Ishihara, I. Sasaki","doi":"10.1109/VLSIC.1988.1037418","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037418","url":null,"abstract":"I) Introduction Recentlv. lhlb SRAMs with nolvsilicon load resistor cell have been r e p ~ r t e d l , ~ , ~ , ~ . But i t becomes difficult to reduce standby current less than ILIA, because of data retention problem and process difficulty of high resistivity polysilicon formation. This paper describes a 1Mb SRAM with a standby current of O.IpA, employing, as cell load devices, p-channel polysilicon transistors with offset gate-drain structure, stacked on n-channel driver transistors5. The SRAM also employed an optimal sensitivity-control scheme of clock generators, immune to VCCIGND voltagebouncing noises which induce serious problem in a byte-wide RAM with an address transition, det,ector. The circuit scheme widened input voltage margins by 0.2V.","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124156959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mixed-mode simulation and verification: status and future","authors":"D. Smith","doi":"10.1109/VLSIC.1988.1037423","DOIUrl":"https://doi.org/10.1109/VLSIC.1988.1037423","url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121402953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}