{"title":"MOS固态存储器软错误率的改进","authors":"S. Murakami, K. Ichinose, K. Anami, S. Kayano","doi":"10.1109/VLSIC.1988.1037422","DOIUrl":null,"url":null,"abstract":"I n t r o d u c t i o n Recently, the access time of VLSI CMOS SRAMS’.’.~ has come to the level of ECL RAMs. The a-particle induced soft error ia the SRAMs with high resistive load cell has been a serious problem, b c cause the soft error rate (SER) abruptly increases at the short cycle time ‘.‘. Although the SER is reduced by the increme of the capacitance in storage nodes, the scaled amnll cell area limits the increase of the capacitance. This paper proposes two unique improvement techniques with no extra ailicon area, and the SER is improved by 2 orders of magnitude.","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improvement of soft error rate in MOS SRAMs\",\"authors\":\"S. Murakami, K. Ichinose, K. Anami, S. Kayano\",\"doi\":\"10.1109/VLSIC.1988.1037422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"I n t r o d u c t i o n Recently, the access time of VLSI CMOS SRAMS’.’.~ has come to the level of ECL RAMs. The a-particle induced soft error ia the SRAMs with high resistive load cell has been a serious problem, b c cause the soft error rate (SER) abruptly increases at the short cycle time ‘.‘. Although the SER is reduced by the increme of the capacitance in storage nodes, the scaled amnll cell area limits the increase of the capacitance. This paper proposes two unique improvement techniques with no extra ailicon area, and the SER is improved by 2 orders of magnitude.\",\"PeriodicalId\":115887,\"journal\":{\"name\":\"Symposium 1988 on VLSI Circuits\",\"volume\":\"158 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1988 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1988.1037422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1988 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1988.1037422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
I n t r o d u c t i o n Recently, the access time of VLSI CMOS SRAMS’.’.~ has come to the level of ECL RAMs. The a-particle induced soft error ia the SRAMs with high resistive load cell has been a serious problem, b c cause the soft error rate (SER) abruptly increases at the short cycle time ‘.‘. Although the SER is reduced by the increme of the capacitance in storage nodes, the scaled amnll cell area limits the increase of the capacitance. This paper proposes two unique improvement techniques with no extra ailicon area, and the SER is improved by 2 orders of magnitude.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
