2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems最新文献_第10页

Mechanical properties of intermetallics formed during thermal aging of Cu-Al ball bonds Cu-Al球键热时效形成的金属间化合物的力学性能

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765798

M.H.M. Koutersa, G.H.M. Gubbelsa, O. O'Halloranb, R. Rongenb, E.R. Weltevredena

引用次数: 7

A substructure method for strip level warpage simulation of a power module in assembly process 一种用于电源模块装配过程中带材翘曲仿真的子结构方法

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765806

Jianghai Gu, L. Liang, Y. Liu

引用次数: 1

Modelling aluminium wire bond reliability in high power OMP devices 高功率OMP器件中铝线键合可靠性建模

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765790

R. Kregting, C. Yuan, A. Xiao, F. de Bruijn

引用次数: 3

Simulation environment for MEMS sensors and actuators MEMS传感器和执行器的仿真环境

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765856

M. Kaltenbacher, H. Kock

引用次数: 2

Improving the solderability and electromigration behavior of Low-Ag SnAgCu soldering 改善低银SnAgCu钎焊的可焊性和电迁移行为

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765807

Sun Fenglian, Liu Yang, Wang Jiabing

{"title":"Improving the solderability and electromigration behavior of Low-Ag SnAgCu soldering","authors":"Sun Fenglian, Liu Yang, Wang Jiabing","doi":"10.1109/ESIME.2011.5765807","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765807","url":null,"abstract":"Compared with widely used SAC305 (Sn-3.0Ag-0.5Cu) solder, low-Ag (Ag≤1%) SAC solder obviously shows advantages in cost and mechanical impact resistance, and disadvantages in worse wettability, higher melting point and degeneration in electromigration, which restrict its application. Therefore, adding some suitable elements to the solder to improve the solderability and mechanical performance is very important for applications. In this paper, the solderability and electromigration behavior of Low-Ag SAC solder were studied. The effect of adding Bi and Ni elements on the wettability, melting temperature and electromigration properties of SAC0705 (Sn-0.7Ag-0.5Cu) soldering on Cu pad were analysed by SEM and DSC investigations. Results indicate that addition of some Bi and Ni elements into SAC0705 could decrease the peak melting point of the solder, improve the wettability of solder on Cu pad obviously, and decrease the IMC grain size in interface. In addition, adding some Bi and Ni elements could restrict the electromigration behavior under high temperature and high density current stressing. It is found that the thermal condition has much more influence on electromigartion behavior. The IMC polarized distribution and copper consumption aggravate sharply under higher temperature and high density current stressing condition.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134317704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Mechanical model of a MEMS inertial rotational gyroscope MEMS 惯性旋转陀螺仪的机械模型

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765763

F. Braghin, E. Leo, F. Resta, Stefano Cerra

引用次数: 1

Thermal mechanical modeling and assessment for a novel power system module with vertical input capacitor 一种新型垂直输入电容电力系统模块的热力学建模与评估

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765805

R. Qian, Yumin Liu, Y. Liu, Steve Martin, O. Jeon

{"title":"Thermal mechanical modeling and assessment for a novel power system module with vertical input capacitor","authors":"R. Qian, Yumin Liu, Y. Liu, Steve Martin, O. Jeon","doi":"10.1109/ESIME.2011.5765805","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765805","url":null,"abstract":"In this paper, a novel power system module (PSM) is developed by integrating the vertical input capacitor inside the package. Comparing with the traditional PSM, the novel PSM has better electrical performance with less parasitic inductance and switching loss, due to a small loop from the input capacitor to the MOSFETs. A comprehensive modeling study is carried out to assess the assembly stress, thermal performance and reliability performance of the novel PSM. The impact of input capacitor height of the novel PSM is studied by building models with different input capacitor height designs. The modeling of the traditional PSM without the input capacitor is also conducted for comparison. The molding cure process is simulated to study the thermal stress induced by the CTE mismatch of different materials. The non-linear elastic plastic material constitutive model is applied to solder, clip and lead frame. The stress on die, solder paste and solder bump is evaluated and analyzed. Thermal characterization of all the package models is conducted to calculate the thermal resistance Rthja according to the JEDEC standards. The matrix method is used to obtain the thermal resistance of all dies, by applying power on different dies separately. The reliability performance is simulated and compared for all package models, including the autoclave (ACLV) test and preconditioning test. An equivalent CTE method is used to simulate the total stress after the ACLV and reflow process, including the hygroscopic stress, vapor pressure induced stress, and the CTE mismatch induced stress. Finally, the possible failure modes of the novel PSM are discussed.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"4657 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125212082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Buckling analysis of carbon nanotubes and the influence of defect position 碳纳米管屈曲分析及缺陷位置的影响

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765864

R. Poelma, H. Sadeghian, S. Koh, G.Q. Zhang

{"title":"Buckling analysis of carbon nanotubes and the influence of defect position","authors":"R. Poelma, H. Sadeghian, S. Koh, G.Q. Zhang","doi":"10.1109/ESIME.2011.5765864","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765864","url":null,"abstract":"In this paper, the buckling behavior of fixed-fixed, both single- and multi- wall carbon nanotubes (CNTs) under axial compressive loads, are studied using analytical continuum theory and molecular dynamics (MD). An approach based on the tethering of atoms, is used to apply the boundary conditions and extract the reaction forces during the MD simulation. Both the analytical and the MD results agree well for slender CNTs (length=diameter = L/D ≥ 9), that show global buckling. The critical buckling load of non slender CNTs (L/D < 9) is overestimated by the analytical model due to the local buckling. Moreover, the effects of the vacancy defect position on the critical buckling load are studied at room temperature and at low temperature (1 K). It is concluded that the defects at the ends of the CNT and close to the middle of the CNT significantly reduce the critical buckling load and strain of CNTs at 1 K. However, the influence of vacancy defects on the critical buckling load and strain appears to be small at room temperature. The MD results can be used for developing more computationally efficient and accurate continuum descriptions of the CNT mechanics in future work.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"362 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134114121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Thermal performance analysis of photoelectric parameters on high-power LEDs packaging modules 大功率led封装模组光电参数热性能分析

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765842

Lei Liu, Daoguo Yang, G.Q. Zhang, Zhi You, Fengze Hou, Dongjing Liu

{"title":"Thermal performance analysis of photoelectric parameters on high-power LEDs packaging modules","authors":"Lei Liu, Daoguo Yang, G.Q. Zhang, Zhi You, Fengze Hou, Dongjing Liu","doi":"10.1109/ESIME.2011.5765842","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765842","url":null,"abstract":"Compared with incandescent lamps and fluorescent lamps, nowadays LEDs (Light Emitting Diodes) are power saving, environment-friendly, and have the advantages of long lifetime and flexible color output. Therefore, LEDs are being widely used in many fields. In this paper, three high-power LEDs packaging modules with different packaging structures were selected to do the performance analysis based on the experiments. In the measurement, the LED junction temperature was controlled at seven levels (25°C, 50°C, 65°C, 75°C, 85°C, 95C, 100°C) in sequence. The thermal variation of some photoelectric parameters for LED packaging modules, such as forward voltage, relative flux output, correlated color temperature (CCT), color rending index (Ra), luminous efficiency and spectrum, were focused on and analyzed here. The experimental results demonstrated that the luminous flux, luminous efficacy and forward voltage of LEDs decreased with the increase of the junction temperature, but these three LEDs packaging modules have different varieties on CRI, CCT and spectrum. The related reasons were analyzed briefly in this paper.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Low cycle fatigue crack growth in nanostructure copper 纳米结构铜的低周疲劳裂纹扩展

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2011-04-18 DOI: 10.1109/ESIME.2011.5765849

S. Koh, A. Saxena, W. V. van Driel, G.Q. Zhang, R. Tummala

{"title":"Low cycle fatigue crack growth in nanostructure copper","authors":"S. Koh, A. Saxena, W. V. van Driel, G.Q. Zhang, R. Tummala","doi":"10.1109/ESIME.2011.5765849","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765849","url":null,"abstract":"ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the high mechanical reliability and electrical requirements of next generation devices. However, there is a need to fully characterize their fatigue properties. In this research, numerical analysis has been employed to study the semi-elliptical crack growth and shape evolution in nanostructured interconnects subject to uniaxial fatigue loading. The results indicate that nanocrystalline copper is in fact a suitable candidate for ultra-fine pitch interconnects applications. This study also predicts that crack growth is a relatively small portion of the total fatigue life of interconnects under LCF conditions. Hence, crack initiation life is the main factor in determining the fatigue life of interconnects.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124177419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2