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Numerical Simulation of Optoelectronic Devices, 2014最新文献

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Enhanced light absorption in plasmonics-based MSM-PD with special design of subwavelength slit 特殊亚波长狭缝设计的等离子体MSM-PD增强光吸收
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935366
F. F. Masouleh, N. Das, S. M. Rozati
{"title":"Enhanced light absorption in plasmonics-based MSM-PD with special design of subwavelength slit","authors":"F. F. Masouleh, N. Das, S. M. Rozati","doi":"10.1109/NUSOD.2014.6935366","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935366","url":null,"abstract":"A novel plasmonics-based metal-semiconductor-metal photodetector is introduced which dramatically modifies the light transmission spectra when the sub-wavelength central slit is not bare. FDTD method has been utilized to simulate the behavior of the device with significant responsivity.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130662039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-localized Structures in Vertical-Cavity Surface-Emitting Lasers (VCSELs) 垂直腔面发射激光器(VCSELs)中的时间局域结构
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935398
M. Marconi, M. Giudici, J. Javaloyes, S. Balle
{"title":"Time-localized Structures in Vertical-Cavity Surface-Emitting Lasers (VCSELs)","authors":"M. Marconi, M. Giudici, J. Javaloyes, S. Balle","doi":"10.1109/NUSOD.2014.6935398","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935398","url":null,"abstract":"In this presentation we will review the results recently obtained on Time-Localized Structures (TLS) in VCSELs coupled to an external cavity. We show that, when the cavity roundtrip is much larger than the medium timescales, this system exhibits a temporal aspect-ratio large enough to host TLS. Two configurations will be considered. In the first one the system is submitted to cross-polarization reinjection which leads to the formation of vectorial TLS. In the second one the external cavity is closed by a Resonant Saturable Absorber Mirror, a scheme conventionally used to obtain mode-locked pulses. Here we will show how TLS can be obtained from mode-locking.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116964762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PDL optimization in waveguide MQW pin photodiodes 波导MQW引脚光电二极管的PDL优化
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935416
Gan Zhou, P. Runge
{"title":"PDL optimization in waveguide MQW pin photodiodes","authors":"Gan Zhou, P. Runge","doi":"10.1109/NUSOD.2014.6935416","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935416","url":null,"abstract":"In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127701534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical analysis of passively mode-locked inhomogeneously broadened lasers 被动锁模非均匀加宽激光器的理论分析
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935401
A. Pimenov, A. Vladimirov
{"title":"Theoretical analysis of passively mode-locked inhomogeneously broadened lasers","authors":"A. Pimenov, A. Vladimirov","doi":"10.1109/NUSOD.2014.6935401","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935401","url":null,"abstract":"We consider a quasi-two-level travelling wave model of an inhomogeneously broanened laser. We propose a new numerical method to solve these equations, and perform numerical simulations to study the effect of inhomogeneous broadening on the properties of mode-locking regime.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131531565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate 硅纳米线阵列基太阳能电池的光电流增强
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935411
D. Kudryashov, A. Gudovskikh
{"title":"Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate","authors":"D. Kudryashov, A. Gudovskikh","doi":"10.1109/NUSOD.2014.6935411","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935411","url":null,"abstract":"A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm2 and efficiency of 11.8% under AM1.5D 100 mW/cm2. The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell's characteristics was shown.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114055029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly efficient GaN-based bipolar cascade LEDs 高效氮化镓基双极级联led
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935335
J. Piprek
{"title":"Highly efficient GaN-based bipolar cascade LEDs","authors":"J. Piprek","doi":"10.1109/NUSOD.2014.6935335","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935335","url":null,"abstract":"GaN-based light-emitting diodes (LEDs) exhibit a severe efficiency droop with increasing current. The physical mechanisms behind this droop phenomenon are still under dispute, but most droop models hold the rising carrier density inside the quantum wells responsible. This paper analyses a new approach to circumvent the droop problem by raising the quantum efficiency beyond 100% utilizing multiple tunnel junctions inside the multi-quantum well active region.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121349545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of gain saturation characteristics in SOAs for different input pulse shapes 不同输入脉冲形状下soa增益饱和特性分析
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935364
Suchi Barua, N. Das, S. Nordholm, M. Razaghi
{"title":"Analysis of gain saturation characteristics in SOAs for different input pulse shapes","authors":"Suchi Barua, N. Das, S. Nordholm, M. Razaghi","doi":"10.1109/NUSOD.2014.6935364","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935364","url":null,"abstract":"This paper presents the gain saturation characteristics for different input pulse shapes in semiconductor optical amplifiers (SOAs). Finite-difference beam propagation method (FD-BPM) is used for simulation and compared the gain saturation characteristics in SOA for different pulse shapes.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129612687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mixed mode oscillations in a forced optoelectronic circuit for pattern and random bit generation 用于模式和随机位生成的强制光电电路中的混合模式振荡
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935378
B. Romeira, J. Figueiredo, J. Javaloyes, O. Piro, S. Balle
{"title":"Mixed mode oscillations in a forced optoelectronic circuit for pattern and random bit generation","authors":"B. Romeira, J. Figueiredo, J. Javaloyes, O. Piro, S. Balle","doi":"10.1109/NUSOD.2014.6935378","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935378","url":null,"abstract":"We investigate the generation of mixed mode oscillations in a periodic forced optoelectronic circuit comprising a high-speed resonant tunneling diode (RTD) and a laser diode (LD). The driven RTD-LD exhibits a two-state level operation, characterized by either periodic or aperiodic intermittent patterns with a high amplitude followed by small amplitudes, that can be used for applications in switching at very fast modulation speeds and encoding of binary data sequences into the corresponding electrical and optical states of the dynamical system.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122300798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs InGaN/GaN led声子发射载流子捕获时间的量子模型
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935375
M. Vallone, F. Bertazzi, M. Goano, G. Ghione
{"title":"Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs","authors":"M. Vallone, F. Bertazzi, M. Goano, G. Ghione","doi":"10.1109/NUSOD.2014.6935375","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935375","url":null,"abstract":"A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate, because this parameter varies considerably with the device working point.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127730074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full-scale simulations of dielectric laser-driven accelerators 介电激光驱动加速器的全尺寸模拟
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935382
B. Cowan, G. Bell, R. England, R. Noble, E. Peralta, K. Soong
{"title":"Full-scale simulations of dielectric laser-driven accelerators","authors":"B. Cowan, G. Bell, R. England, R. Noble, E. Peralta, K. Soong","doi":"10.1109/NUSOD.2014.6935382","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935382","url":null,"abstract":"Dielectric laser acceleration (DLA) holds great promise for a new class of high-energy charged particle accelerators. Taking advantage of the high field intensities available from laser sources as well as the high damage threshold of dielectric materials, DLAs can attain more than an order of magnitude higher field gradient-energy gain per unit length-than conventional, microwave cavity-based accelerators. However, the design considerations for DLAs have notable differences from those of conventional accelerators. In this presentation, we first present the physics and requirements of DLAs, illustrating many of the principles through designs of photonic crystal waveguide accelerators. We then describe recent results on simulations of grating structures, discussing the simulation techniques and comparison with experiments.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133349992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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