{"title":"硅纳米线阵列基太阳能电池的光电流增强","authors":"D. Kudryashov, A. Gudovskikh","doi":"10.1109/NUSOD.2014.6935411","DOIUrl":null,"url":null,"abstract":"A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm2 and efficiency of 11.8% under AM1.5D 100 mW/cm2. The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell's characteristics was shown.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate\",\"authors\":\"D. Kudryashov, A. Gudovskikh\",\"doi\":\"10.1109/NUSOD.2014.6935411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm2 and efficiency of 11.8% under AM1.5D 100 mW/cm2. The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell's characteristics was shown.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate
A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm2 and efficiency of 11.8% under AM1.5D 100 mW/cm2. The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell's characteristics was shown.
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