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Numerical Simulation of Optoelectronic Devices, 2014最新文献

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Double-sided pattern design on patterned sapphire substrate of GaN-based LEDs 氮化镓基led图案蓝宝石衬底双面图案设计
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935338
Xinyu Yu, Zhen Che, J. Zhang, Mengyuan Xie, Jianhui Yu, Huihui Lu, Yunhan Luo, Zhe Chen
{"title":"Double-sided pattern design on patterned sapphire substrate of GaN-based LEDs","authors":"Xinyu Yu, Zhen Che, J. Zhang, Mengyuan Xie, Jianhui Yu, Huihui Lu, Yunhan Luo, Zhe Chen","doi":"10.1109/NUSOD.2014.6935338","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935338","url":null,"abstract":"In this paper, we established a optical model and made an analysis of GaN-based LED flip chip by double-sided PSS (patterned sapphire substrate). The result analysis shows that the small distance and large radius of micro-cylinder and micro-hemisphere for cylindrical and hemispherical PSS would be more effective to enhance LED efficacy. The hemispherical pattern is more efficient than the cylindrical for enhancement for the light extraction efficiency (LEE) of PSS-LED flip chip. The light extraction efficiency of micro-hemispherical PSS-LED chip is twice than that on the non-patterned (or normal planar) sapphire substrate (non-PSS).","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115141666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical analysis of optical coupling characteristics of side-polished photonics crystal fiber and micro optical fiber with bending 侧面抛光光子晶体光纤与弯曲微光纤光耦合特性的数值分析
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935368
Xiaoli He, Jianhui Yu, Yingxin Zeng, Yunhan Luo, J. Zhang, Jieyuan Tang, Zhe Chen, Huihui Lu
{"title":"Numerical analysis of optical coupling characteristics of side-polished photonics crystal fiber and micro optical fiber with bending","authors":"Xiaoli He, Jianhui Yu, Yingxin Zeng, Yunhan Luo, J. Zhang, Jieyuan Tang, Zhe Chen, Huihui Lu","doi":"10.1109/NUSOD.2014.6935368","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935368","url":null,"abstract":"In order to design all optical fiber coupling devices based on side-polished photonics crystal fiber(SPPCF) and micro optical fiber(MF), a numerical model was utilized by use of three dimension finite difference beam propagation method (FDBPM). The optical coupling characteristics between SPPCF and MF were calculated and analyzed with the variation of the three factors: residual radius after side polishing, the diameter of the MF, and the radius of curvature of MF's bending part.The numerical study shows: when the launch light input from MF, the shorter the residual radius of SPPCF is, the larger the optical power, which is coupled into SPPCF. The diameter of the MF and the residual radius after side polishing were also optimized according to the optical transmitted power throught the coupled device by combinning the SPPCF and MF.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122926737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Kerr-nonlinear waveguide structures by an eigenmode expansion method 克尔-非线性波导结构的特征模展开模拟
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935352
J. Petráček
{"title":"Simulation of Kerr-nonlinear waveguide structures by an eigenmode expansion method","authors":"J. Petráček","doi":"10.1109/NUSOD.2014.6935352","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935352","url":null,"abstract":"We present a new implementation of the eigenmode expansion technique for modeling Kerr-nonlinear waveguide structures. The formulation uses numerically stable scattering matrices and a perturbation approach based on the rigorous coupled-mode theory.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"248 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121127645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier 双势垒中GaAs/InGaAs/InAs量子点的光电转换行为
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935344
W. Wang, L. Ding, F. Guo
{"title":"The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier","authors":"W. Wang, L. Ding, F. Guo","doi":"10.1109/NUSOD.2014.6935344","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935344","url":null,"abstract":"A GaAs/InGaAs/InAs quantum dots - quantum well in double barrier is discussed in this paper, because it has shown a specific inner multiplication in test and lower dark current accompanied by high current gains. The S (signal)/D (dark current) has reached 106 at a certain light power and bias. For further know its electronic transport and photoelectric characteristic, we are contrastive analysis sensitivity and dark current of quantum dots and quantum well in double barrier respectively, and interrelation under different illumination intensity respectively.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134562615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Plasmon-enhanced light absorption of silicon solar cells using Al nanoparticles 利用铝纳米粒子增强等离子体对硅太阳能电池的光吸收
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935353
D. Zhang, X. Yang, X. Hong, Y. Liu, J. Feng
{"title":"Plasmon-enhanced light absorption of silicon solar cells using Al nanoparticles","authors":"D. Zhang, X. Yang, X. Hong, Y. Liu, J. Feng","doi":"10.1109/NUSOD.2014.6935353","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935353","url":null,"abstract":"The absorption enhancements of silicon layer in silicon solar cells with Al sphere nanoparticles are studied by the finite difference time domain (FDTD) method. The results show that the light absorption of silicon is significantly improved due to the localized surface plasmon (LSP) resonance. The relations of the absorption enhancement with the parameters of nanoparticles are thoroughly analyzed. The optimal absorption enhancement can be achieved by adjusting the relevant parameters. Specially, the silicon with the 140nm Al nanoparticles shows the most efficient absorption enhancement at optimal conditions and its maximum absorption enhancement factor is 1.4.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116111617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Twisted split-ring chiral metamaterials for broadband circular dichroism 宽带圆二色性的扭裂环手性超材料
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935350
Ruonan Ji, Shaowei Wang, Xiaoshuang Chen, W. Lu
{"title":"Twisted split-ring chiral metamaterials for broadband circular dichroism","authors":"Ruonan Ji, Shaowei Wang, Xiaoshuang Chen, W. Lu","doi":"10.1109/NUSOD.2014.6935350","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935350","url":null,"abstract":"In this paper, a kind of twisted split-ring chiral metamaterials is proposed to obtain integratable broadband circle dichroism. With coupling among closely spaced twisted split-rings, a broadband circle dichroism is achieved owning to the combined effect of Bragg resonance and internal resonance.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125878760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction and prevention of defective regions within thin-film silicon solar cells 薄膜硅太阳能电池缺陷区的预测与预防
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935405
M. Sever, J. Krč, M. Topič
{"title":"Prediction and prevention of defective regions within thin-film silicon solar cells","authors":"M. Sever, J. Krč, M. Topič","doi":"10.1109/NUSOD.2014.6935405","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935405","url":null,"abstract":"Previously developed growth model is used to simulate occurrence of defective regions within thin-film silicon solar cells. Such procedure enables expansion of optical optimization with prediction and prevention of defective regions, resulting in optimized textures generating high short-circuit current density (JSC) while maintaining good electrical properties of the cell. The approach is applied on sinusoidal and semi-circular texture. Best predicted case for the analysed double junction thin-film silicon solar cell is the semi-circular texture with period of 1800 nm and height of 900 nm, where improvement in JSC of 2 % and 85 % is expected for top and bottom cell, respectively.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125925215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of SOA-MRR-based equalization technique for FSO signals 基于soa - mrr的FSO信号均衡技术仿真
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935360
Z. V. Rizou, K. Zoiros, A. Hatziefremidis
{"title":"Simulation of SOA-MRR-based equalization technique for FSO signals","authors":"Z. V. Rizou, K. Zoiros, A. Hatziefremidis","doi":"10.1109/NUSOD.2014.6935360","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935360","url":null,"abstract":"The feasibility of combining a semiconductor optical amplifier (SOA) with a single passive microring resonator (MRR) to equalize the amplitude and phase fluctuations of the distorted signal in free space optical (FSO) communications is theoretically investigated and demonstrated. The numerical simulation conducted for this purpose allows to specify the MRR radius and detuning so that the critical performance metrics are acceptable and the signal's quality is sufficiently restored.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116829467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of electron blocking layer on inter-QW transport in III-nitride multi-QW LEDs 电子阻挡层对iii -氮化物多量子w led中量子w间输运的影响
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935345
M. Kisin, C. Chuang, H. El-Ghoroury
{"title":"Effect of electron blocking layer on inter-QW transport in III-nitride multi-QW LEDs","authors":"M. Kisin, C. Chuang, H. El-Ghoroury","doi":"10.1109/NUSOD.2014.6935345","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935345","url":null,"abstract":"Strong disparity in electron and hole transport characteristics and excessive depth of optically active quantum wells (QWs) in III-nitride materials are the main causes of inhomogeneous carrier distribution and uneven QW injection in multi-QW light emitters of visible range. Both polar and nonpolar LED structures suffer from inhomogeneous injection. Undoped wide-bandgap electron blocking layer (EBL) located on the P-side of the active region can only make the situation worse by further reducing already insufficient hole injection. On the other hand, P-doped EBL facilitates the hole injection, improves the overall active region injection uniformity, and reduces the carrier leakage. We show, however, that EBLs act very differently in polar and nonpolar III-nitride multi-QW structures. While in nonpolar LED the p-doped EBL ultimately promotes the inter-QW carrier exchange, the injection efficiency in polar structure remains limited by strong electron leakage from the marginal p-side QW.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114790151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and simulation of high-speed nanophotonic electro-optic modulators 高速纳米光子电光调制器的设计与仿真
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI: 10.1109/NUSOD.2014.6935329
S. Kaunga-Nyirenda, H. Dias, J. Lim, S. Bull, S. Malaguti, G. Bellanca, E. Larkins
{"title":"Design and simulation of high-speed nanophotonic electro-optic modulators","authors":"S. Kaunga-Nyirenda, H. Dias, J. Lim, S. Bull, S. Malaguti, G. Bellanca, E. Larkins","doi":"10.1109/NUSOD.2014.6935329","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935329","url":null,"abstract":"In this work, an ultracompact electro-optic modulator based on refractive index modulation by plasma dispersion effect in PhC all-optical gate (AOG) is proposed. The index modulation is achieved by applying a time-varying bias voltage across the electrical contacts of the AOG. The proposed modulator has potential for high-speed operation, with bandwidths in excess of 30GHz achievable.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132267203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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