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Numerical Simulation of Optoelectronic Devices, 2014最新文献

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Modeling of multimode laser dynamics by means of delay differential equations 用延迟微分方程建立多模激光动力学模型
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI: 10.1109/NUSOD.2014.6935402
A. Vladimirov, A. Pimenov, U. Bandelow
{"title":"Modeling of multimode laser dynamics by means of delay differential equations","authors":"A. Vladimirov, A. Pimenov, U. Bandelow","doi":"10.1109/NUSOD.2014.6935402","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935402","url":null,"abstract":"We discuss an approach to the analysis of nonlinear dynamics in multimode semiconductor lasers based on the use of delay differential equations (DDEs) for the electric field envelope and carrier density in nonlinear intracavity media. We consider DDE models of a mode-locked semiconductor laser generating short optical pulses and a multistripe laser array with external feedback. We present the results of numerical simulations of different dynamical regimes in these lasers and discuss asymptotic approaches for the stability analysis of different operation regimes.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114574764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures 金属纳米结构HgCdTe光导红外探测器的建模
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI: 10.1109/NUSOD.2014.6935415
J. Liang, W. D. Hu, X. Chen, Z. Li, W. Lu
{"title":"Modeling of HgCdTe photoconductive infrared detector with metallic nanostructures","authors":"J. Liang, W. D. Hu, X. Chen, Z. Li, W. Lu","doi":"10.1109/NUSOD.2014.6935415","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935415","url":null,"abstract":"An HgCdTe photoconductive infrared detector with metallic nanostructures has been numerically studied. The plasmonic resonant absorption and the photo current response spectra of the detector are investigated by using a combination of the FDTD method and FEM method. The simulated results show the dependence between the geometric design and the performance of the detector. A higher photo response can be achieved in comparison to common HgCdTe photoconductive infrared detector.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130998203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of the electrical performance of n-GaAs sub-cells in InGaP/GaAs/Ge 3J solar cells under 1 MeV electron irradiation using computer simulation 1 MeV电子辐照下InGaP/GaAs/ ge3j太阳能电池n-GaAs亚电池电学性能的计算机模拟研究
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI: 10.1109/NUSOD.2014.6935407
M. Cappelletti, G. Casas, A. Cédola, E. L. Peltzer y Blanća
{"title":"Study of the electrical performance of n-GaAs sub-cells in InGaP/GaAs/Ge 3J solar cells under 1 MeV electron irradiation using computer simulation","authors":"M. Cappelletti, G. Casas, A. Cédola, E. L. Peltzer y Blanća","doi":"10.1109/NUSOD.2014.6935407","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935407","url":null,"abstract":"A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated with 1 MeV electrons, has been carried out by means of computer simulation. Effects of both base and emitter carrier concentration upon radiation resistance of these devices have been researched. From analysis it is possible to determine the highest electron fluence to which the electrical parameters of the solar cell, with well-known base and emitter carrier concentrations, are reduced simultaneously in less than 20% from their non-irradiated values. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133799340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Longitudinal mode analysis of multisection ring and edge-emitting semiconductor lasers 多截面环形和边发射半导体激光器的纵向模态分析
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI: 10.1109/NUSOD.2014.6935392
M. Radziunas
{"title":"Longitudinal mode analysis of multisection ring and edge-emitting semiconductor lasers","authors":"M. Radziunas","doi":"10.1109/NUSOD.2014.6935392","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935392","url":null,"abstract":"We present a method which allows computing and analyzing longitudinal optical modes in multisection ring and edge-emitting lasers, provided the traveling wave model gives an appropriate description for the dynamics in these devices.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123767882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of interdigitated back contact geometry in silicon heterojunction solar cell 硅异质结太阳能电池交叉背接触几何结构优化
Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-09-01 DOI: 10.1109/NUSOD.2014.6935406
M. Filipič, F. Smole, M. Topič
{"title":"Optimization of interdigitated back contact geometry in silicon heterojunction solar cell","authors":"M. Filipič, F. Smole, M. Topič","doi":"10.1109/NUSOD.2014.6935406","DOIUrl":"https://doi.org/10.1109/NUSOD.2014.6935406","url":null,"abstract":"In-house developed 2D semiconductor simulator ASPIN3 is used to simulate amorphous silicon / crystalline silicon heterojunction cells with interdigitated contacts on the back side. Our focus is on finding the optimal widths of emitter and back surface field stripes as well as the width of the gap between them. Analysis of the three dimensional parameter space reveals that high efficiencies can be achieved for relatively large widths, over 100 μm, allowing the use of simple patterning techniques to create the cells.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"409 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125415285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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