The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier

Abstract

A GaAs/InGaAs/InAs quantum dots - quantum well in double barrier is discussed in this paper, because it has shown a specific inner multiplication in test and lower dark current accompanied by high current gains. The S (signal)/D (dark current) has reached 106 at a certain light power and bias. For further know its electronic transport and photoelectric characteristic, we are contrastive analysis sensitivity and dark current of quantum dots and quantum well in double barrier respectively, and interrelation under different illumination intensity respectively.