{"title":"波导MQW引脚光电二极管的PDL优化","authors":"Gan Zhou, P. Runge","doi":"10.1109/NUSOD.2014.6935416","DOIUrl":null,"url":null,"abstract":"In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"PDL optimization in waveguide MQW pin photodiodes\",\"authors\":\"Gan Zhou, P. Runge\",\"doi\":\"10.1109/NUSOD.2014.6935416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.
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