{"title":"InGaN/GaN led声子发射载流子捕获时间的量子模型","authors":"M. Vallone, F. Bertazzi, M. Goano, G. Ghione","doi":"10.1109/NUSOD.2014.6935375","DOIUrl":null,"url":null,"abstract":"A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate, because this parameter varies considerably with the device working point.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs\",\"authors\":\"M. Vallone, F. Bertazzi, M. Goano, G. Ghione\",\"doi\":\"10.1109/NUSOD.2014.6935375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate, because this parameter varies considerably with the device working point.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs
A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate, because this parameter varies considerably with the device working point.
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