2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)最新文献

{"title":"Truly differential RF and microwave front-end design","authors":"Shaofang Gong, A. Huynh, M. Karlsson, A. Serban, Owais, J. Osth","doi":"10.1109/WAMICON.2010.5461888","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461888","url":null,"abstract":"New design methodology for truly differential RF and microwave front-ends has been presented in this paper. Baluns are avoided using this design methodology, while achieving differential signaling for high noise immunity. A case study on an ultra-wide band RF front-end in the frequency band 6-9 GHz has been performed using the new design methodology, indicating that both wide bandwidth and high performance can be achieved using this design methodology. A direct comparison between single-ended and differential designs of the RF filter has also been presented in order to verify the correctness of the design methodology.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121662822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers","authors":"Jin-Siang Syu, Tzung-Han Wu, C. Meng","doi":"10.1109/WAMICON.2010.5461880","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461880","url":null,"abstract":"The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-µm GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-µm CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10 dB, respectively, at a supply voltage of 3.3 V.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132883384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"4 – 8 GHz LNA design for a highly adaptive small satellite transponder using InGaAs pHEMT technology","authors":"S. Ekpo, D. George","doi":"10.1109/WAMICON.2010.5461877","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461877","url":null,"abstract":"The ever increasing global space activity is characterised by emerging space systems, operation and applications challenges. Hence, reliable RF and microwave receivers for in-orbit highly adaptive small satellites are needed to support reconfigurable multimedia/broadband applications in real-time with optimal performance. Though other parameters of the small satellite communication system may be critical, the noise level of the receiver determines the viability, reliability and deliverability of the project. Thus, a good design that delivers low noise performance, high gain and low power consumption for multipurpose space missions is inevitable. This paper describes a 0.15µm InGaAs pseudomorphic high electron mobility transistor amplifier with low noise and high gain in the frequency band 4 – 8 GHz. The monolithic microwave integrated circuit LNA design presented here shows the best performance known using this technology; noise figure of 0.5 dB and gain of 37 ± 1 dB over the characterised bandwidth.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131992840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A neural network based on-line adaptive predistorter for power amplifier","authors":"M. Doufana, C. Park, M. Bahoura","doi":"10.1109/WAMICON.2010.5461870","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461870","url":null,"abstract":"In this paper, we present a real-time linearizing technique based on Real Valued Tapped Delay Neural Network (RVTDNN) for base band signal predistortion of Power Amplifier (PA). The proposed architecture is suitable for adaptive linearizing of PAs with memory effects. Instead of using indirect learning architecture, we propose a data on-line adaptive predistortion to ensure a continuous adaptation without interrupting the transmitting process. With the proposed architecture, a reliable transmitting process is permanently ensured. The compensation is global including a memory non-linear PA, the modulator-demodulator, and A/D and D/A converter imperfections. The adaptation algorithm minimizes a given cost-function, considered as the mean square error (MSE) between the input Cartesian (IIN, QIN) components and those of the PA output divided by the maximum realizable linear gain. About 30dBc in ACPR improvement is achieved with quick convergence and good stability.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132144725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SAW/BAW acoustoelectronic technology for filters and communication systems","authors":"D. Malocha","doi":"10.1109/WAMICON.2010.5461848","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461848","url":null,"abstract":"Solid state acoustoelectronic technology has had a major impact on communications systems for almost 100 years. The quartz crystal resonator first provided a device for accurate and precise frequency control in oscillators, and then was adapted to produce small, stable filters. However, due to the physical nature of the embodiments, the operational frequency was limited to less than 100 MHz. Solid state surface acoustic wave (SAW) technology emerged in the 1970's to fill a vast number of applications in the 30 MHz to 1 GHz range. The manufacturing used integrated circuit techniques and the embodiments allowed RF frequency operation. Many of the IF SAW applications still exist for demanding military and base station applications, but the performance is greatly enhanced from the early filter development. When cellular phones began in high volume, the technology was adapted and refined to meet demanding low loss, small, and cheap RF filters in the 800 MHz bands. As the frequency of mobile phones increased into the 2GHz band, SAW technology was further challenged requiring enhanced processing and manufacturing techniques, and devices are currently produced. As the frequency increased, thin film bulk acoustic wave resonator (TFR) technology, which had been researched for decades, overcame many drawbacks and are now able to produce high quality filters in the 1–5 GHz range. The SAW and TFR devices compete in the 1–3 GHz range and each can win filter slots, depending on specifications. In addition, these filters are now being integrated into RF modules for multi-band cellular applications. The development of the acoustoelectronic technology continues, always with an eye to enhanced performance, lower cost, and smaller size. New materials, embodiments, wave modes and packaging are all being investigated. Beyond use as just filters, the technology has expanded to RFID tags and sensors. The devices offer advantages of passive, radiation hard and small volume operation. This paper will provide a view of the technology, some historical perspective, current performance and future trends.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122050869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A high-frequency power amplifier using GaN power cell technology","authors":"M. Li, R. Amaya","doi":"10.1109/WAMICON.2010.5461887","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461887","url":null,"abstract":"This paper describes the design, simulation, packaging and measurement of a 10-GHz Gallium Nitride power amplifier (PA). GaN transistors or power cells with maximum-available gain of 8.7 dB at 10 GHz were used in the design. The power cells were manufactured using a 0.8-µm HFET 9-layer process, while the PA's DC bias lines, input and output matching circuits were built on a low-cost Miniature-Hybrid MIC chip. A flip-chip technology was used to integrate the power cells with the rest of the PA circuit. A class-AB PA was designed to provide an output power of up to 39 dBm at 10 GHz, while maintaining a power-added efficiency (PAE) of 31%. The measurements of the PA are presented and issues related to packaging and measurements are also discussed in the paper.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115421836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise analysis for noncontact vital sign detectors","authors":"X. Yu, Changzhi Li, Jenshan Lin","doi":"10.1109/WAMICON.2010.5461889","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461889","url":null,"abstract":"A method for analyzing the overall noise performance of vital sign detectors is introduced. For demonstration purpose, the noise analysis on a quadrature direct-conversion vital sign detector is performed. The detector is divided into three sub-systems including RF Front-end amplifiers, mixer with LO, and baseband amplifiers. The noise characteristics of the sub-systems are studied individually and combined to form the overall noise evaluation of the detector. The study on mixer sub-system results in a key design consideration of mixer. The signal-to-noise ratio at the sampler input is defined as the output SNR and is used to measure the overall noise performance of the vital sign detectors. The effect of output SNR on vital sign detection is presented. Tradeoff between output SNR and detection distance is verified by the experimental results.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123065038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques","authors":"L. D. de Vreede, M. Pelk, E. Neo, J. Qureshi, M. Spirito, M. Squillante, M. Marchetti","doi":"10.1109/WAMICON.2010.5461858","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461858","url":null,"abstract":"Coherent mixed-signal techniques are applied in high-performance N-way Doherty and outphasing amplifier configurations, as well as, in advanced Large-signal RF device characterization systems. These new techniques provide optimum input signal control of the individual branch amplifiers, yielding improved efficiency in power back-off operation and higher bandwidths. When using coherent-mixed signal techniques in Large-Signal device characterization applications, ultra-fast device testing and device characterization with realistic wide-band modulated signals becomes feasible.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129867790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An active, non-intrusive, high resolution microwave field probe with applications in high power RF device and circuit design","authors":"S. Cripps, A. Porch","doi":"10.1109/WAMICON.2010.5461857","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461857","url":null,"abstract":"This paper describes the design, fabrication, and applications of a novel high resolution electric field probe. In essence, the probe consists of a novel miniaturized open-circuited co-axial transmission line that can respond to local normal electric fields with a spatial resolution of about 100 microns. A key aspect of the probe is the use of an active amplifier close to the probe tip. This amplifier not only increases the sensitivity but provides isolation and termination of the unwanted stray pickup from the feeder cable. Results will be presented which show that the probe can resolve the voltage waveforms at individual bond wires in high power transistors. Larger devices have been observed to display substantial spatial variations in this test, which are strongly dependent on the external circuit feeding arrangements.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131156515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling GaN power transistors","authors":"M. Rudolph","doi":"10.1109/WAMICON.2010.5461846","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461846","url":null,"abstract":"Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are no longer strongly impacted by dispersion effects. Therefore, the well-known HEMT models can be successfully used for these transistors. Beginning with this finding, the model extraction for the 60-W packaged device is discussed step-by-step.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124425293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}