Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers

Abstract

The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-µm GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-µm CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10 dB, respectively, at a supply voltage of 3.3 V.