Modeling GaN power transistors

Abstract

Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are no longer strongly impacted by dispersion effects. Therefore, the well-known HEMT models can be successfully used for these transistors. Beginning with this finding, the model extraction for the 60-W packaged device is discussed step-by-step.