{"title":"High power load pull with X-parameters - a new paradigm for modeling and design","authors":"G. Simpson","doi":"10.1109/WAMICON.2010.5461843","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461843","url":null,"abstract":"Load pull with x-parameters is more than a measurement - it creates instant large signal models for simulation and design of complex power amplifier circuits. The model is accurate over the whole range of the device operation and the modeling and design can be done in days, rather than weeks or months. This paper will discuss the process of setting up for high power load pull with X-Parameters, doing the measurement, and bringing the data into the simulation.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132017036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ka-band quadrature Doppler radar system with sub-millimeter resolution and sensitivity in measuring periodic movement","authors":"Yan Yan, Changzhi Li, Jenshan Lin","doi":"10.1109/WAMICON.2010.5461883","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461883","url":null,"abstract":"In this paper, a 27.6 GHz Ka-band quadrature Doppler radar system is developed to measure the movement amplitude of periodic movement. Experiments were conducted to verify that by increasing the carrier frequency from 5.8 GHz to 27.6 GHz, the resolution can be improved to be in the sub-millimeter range. The relation between the sensitivity-limited detection range and movement amplitude under certain output power was also explored.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131180282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Quemerais, L. Moquillon, J. Fournier, P. Benech, N. Corrao
{"title":"Methodology of design of millimeter wave power amplifiers complying with 125°C electromigration design rules in advanced CMOS technology","authors":"T. Quemerais, L. Moquillon, J. Fournier, P. Benech, N. Corrao","doi":"10.1109/WAMICON.2010.5461881","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461881","url":null,"abstract":"Two millimeter-wave (mmw) Power Amplifiers (PAs) designed in a 65 nm CMOS process with 8-metal layers and transistor ft/fmax of 160/200 GHz and complying with 125°C electromigration design rules are reported. The amplifiers are designed to first validate the passive and active millimeter-wave models and then study the MOS reliability at 60 GHz. In this way, the PAs design takes electromigration constraints at 125°C into account which implies limitations on MOS width and thus on the circuits performances. The PAs operate from a 1.2 V supply voltage. A power gain of 7.8 dB and 4.5 dB, an OCP1dB of 9 dBm and 6 dBm with 12.2% and 12.3% PAE and a saturated output power of 12 dBm and 9 dBm at 60 GHz are measured respectively for the 2 stages and the 1 stage amplifiers. Excellent agreement between measurement and simulation results at small and large signals is observed.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117036751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A wide-band differential and single-ended microwave amplitude detector","authors":"Ming‐Che Lee, W. Eisenstadt","doi":"10.1109/WAMICON.2010.5461879","DOIUrl":"https://doi.org/10.1109/WAMICON.2010.5461879","url":null,"abstract":"This paper presents a wide-band amplitude detector that can perform differential and single-ended signal detection on sinusoidal microwave/millimeter-wave signals. The detector contains only one active component, a diode-connected NPN bipolar transistor. The detector's two major advantages, simple circuit structure and variable measuring configurations, make it a good candidate for on-chip applications, and specifically convenient for Six-Port Reflectometer (SPR). To demonstrate its powerful functionality over a wide band, one of its several different measuring configurations is fabricated as a stand-alone circuit in the 0.13-µm IBM BiCMOS-8HP technology. The simulation results show that the detector can work up to 80 GHz, and the measurement results verify its functionality up to 67 GHz due to test equipment limitations. The closed-form formulas of the developed detector are also given.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125549991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation in open circuited metal lines embedded in defected ground structure and its applications to UWB filters","authors":"Wen-Jeng Lin, M. Houng, D. Lin, I. Tang","doi":"10.1109/wamicon.2010.5461894","DOIUrl":"https://doi.org/10.1109/wamicon.2010.5461894","url":null,"abstract":"A novel method for notch implementation in ultra-wideband (UWB) bandpass filter using open circuited metal lines embedded in a defected ground structure (DGS) is proposed. Distinct from traditional notch implementation, the proposed method uses the additional metal lines with half waveguide length embedded in defected ground structure to produce additional notch band behavior based on the DGS bandpass behavior. Furthermore, the equivalent circuit model of the proposed UWB BPF with notch implementation is established for explaining the circuit behaviors more explicitly. In this way, the proposed circuit has a very small size, only amounting to 0.41 by 0.22 guided wavelength at the center frequency of 6.85 GHz. The experimental filter has a notchband frequency of 5.5 GHz, with two observable attenuation poles at 1.65 and 11.36 GHz, respectively. The measured BPF insertion loss is less than 1.0 dB throughout the passband of 3.1 to 10.6 GHz, and the variation of group delay is less than 0.2 ns in this band, except for the notched band.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131744702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Palego, Zhen Peng, J. Hwang, D. Scarbrough, C. Goldsmith
{"title":"Novel Ka-band phase shifters using MEMS capacitive switches","authors":"C. Palego, Zhen Peng, J. Hwang, D. Scarbrough, C. Goldsmith","doi":"10.1109/wamicon.2010.5461851","DOIUrl":"https://doi.org/10.1109/wamicon.2010.5461851","url":null,"abstract":"This paper presents the design of a Ka-band phase shifter comprising a slow-wave structure that tightly wraps around three closely spaced MEMS capacitive switches. The switches are of proven design and reliability, except some switches have a gap in their stationary electrodes. This novel feature has negligible effect on electromechanical operation but provides another degree of freedom for simultaneous optimization of phase shift and impedance match. The design principle is validated through specially designed thin-film test structures. The results suggest that the present design is applicable to phase shifters of different sizes and resolutions with high performance, yield and reliability, but low cost and power consumption.","PeriodicalId":112402,"journal":{"name":"2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114978877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}