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2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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Investigations on Foam Detection Utilizing Ultra-Broadband Millimeter Wave FMCW Radar 利用超宽带毫米波FMCW雷达探测泡沫的研究
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880106
M. V. Delden, S. Westerdick, T. Musch
{"title":"Investigations on Foam Detection Utilizing Ultra-Broadband Millimeter Wave FMCW Radar","authors":"M. V. Delden, S. Westerdick, T. Musch","doi":"10.1109/IMWS-AMP.2019.8880106","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880106","url":null,"abstract":"Foaming impairs the efficiency in several processes of the chemical industry. An early foam detection is advantageous to solve this problem. In this work we investigate the detection of foam by means of radar distance measurements utilizing a low noise 80 GHz FMCW radar with 25 GHz bandwidth. Two foaming solutions with several majority sizes of the air inclusions are used. First, a water butanol solution creates very fine foam. The foam surface is the only measurable reflection. However, it can be distingushed from a refelction at a liquid surface by means of the amplitude. Secondly, a water tenside solution creates fine to coarse foam. The foam surface as well as the liquid surface underneath exhibit a measurable reflection. The finer the foam is, the stronger the reflection at the foam surface and the weaker the reflection at the liquid surface is. Thus, the detection of foam by means of millimeter wave radar measurements is possible.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129513662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Millimeter-wave CNT Based Resonant Cavity 毫米波碳纳米管谐振腔
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880083
Joseph de Saxcé, Philippe Roux-Lévy, Siah Chun Fei, Jianxiong Wang, Tay Beng Kang, Philippe Coque, D. Baillargeat
{"title":"Millimeter-wave CNT Based Resonant Cavity","authors":"Joseph de Saxcé, Philippe Roux-Lévy, Siah Chun Fei, Jianxiong Wang, Tay Beng Kang, Philippe Coque, D. Baillargeat","doi":"10.1109/IMWS-AMP.2019.8880083","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880083","url":null,"abstract":"A 50 GHz carbon nanotube based rectangular resonant cavity is designed, allowing to experimentally obtain the value of the RF conductivity of high-density CNT forests. It also validates a CMOS compatible fabrication process robust to current leakage. A CNT equivalent bulk model is used for 3D electromagnetic simulations and parametric analysis. A new transfer method of CNT forests is considered for the fabrication of the rectangular cavity resonator.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129010418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanostructured Coatings of Low-Secondary Electron Emission to Avoid Multipactor Discharge in High-Power Microwave Devices 避免大功率微波器件中多因素放电的低二次电子发射纳米结构涂层
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880109
L. Olano, M. E. Dávila, J. Rojo, P. Martín-Iglesias, I. Montero
{"title":"Nanostructured Coatings of Low-Secondary Electron Emission to Avoid Multipactor Discharge in High-Power Microwave Devices","authors":"L. Olano, M. E. Dávila, J. Rojo, P. Martín-Iglesias, I. Montero","doi":"10.1109/IMWS-AMP.2019.8880109","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880109","url":null,"abstract":"Here we report low secondary electron emission yields of a nanostructured graphite and metal-dielectric composites coatings of high aspect ratio deposited on aluminium substrates. In this work, the reduction of SEY due to charging of dielectric domains embedded in conducting surfaces is also studied. The charging of the dielectric domains of these composites inhibits most of the secondary emission from the surface, which still keeps its conductive properties. The SEY as a function of the primary electron energy curves of the nanostructured coatings show SEY <1, therefore, the multipactor discharge is avoided.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124115900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IMWS-AMP 2019 Detailed Author Index IMWS-AMP 2019详细作者索引
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/imws-amp.2019.8880066
{"title":"IMWS-AMP 2019 Detailed Author Index","authors":"","doi":"10.1109/imws-amp.2019.8880066","DOIUrl":"https://doi.org/10.1109/imws-amp.2019.8880066","url":null,"abstract":"","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133124519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and Properties of 3D Screen-Printed RF Components 3D丝网印刷射频元件的制备与性能研究
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880065
M. Dressler, T. Studnitzky, M. Stäter, O. Peverini, G. Addamo, H. Nickel
{"title":"Preparation and Properties of 3D Screen-Printed RF Components","authors":"M. Dressler, T. Studnitzky, M. Stäter, O. Peverini, G. Addamo, H. Nickel","doi":"10.1109/IMWS-AMP.2019.8880065","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880065","url":null,"abstract":"This paper reports on the preparation procedure of 3D screen printed RF copper components which were (i) printed in stainless steel and subsequently copper plated, and (ii) printed directly in copper. The RF properties were measured and showed promising results for insertion loss and reflection coefficient.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115632403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
IMWS-AMP 2019 Session List IMWS-AMP 2019会话列表
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/imws-amp.2019.8880099
{"title":"IMWS-AMP 2019 Session List","authors":"","doi":"10.1109/imws-amp.2019.8880099","DOIUrl":"https://doi.org/10.1109/imws-amp.2019.8880099","url":null,"abstract":"","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115899610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Characterisation of VO2 Based Switches for Ultra-Fast Reconfigurable Devices 基于VO2的超快速可重构器件开关的设计与表征
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880086
M. Sadiq, M. Roy, A. Pérennec, P. Laurent, N. Martin, D. Passerieux, A. Crunteanu, R. Boyer, F. Dumas-Bouchiat, M-B. Martin, L. Divay, Q. Levesque, G. Tanné
{"title":"Design and Characterisation of VO2 Based Switches for Ultra-Fast Reconfigurable Devices","authors":"M. Sadiq, M. Roy, A. Pérennec, P. Laurent, N. Martin, D. Passerieux, A. Crunteanu, R. Boyer, F. Dumas-Bouchiat, M-B. Martin, L. Divay, Q. Levesque, G. Tanné","doi":"10.1109/IMWS-AMP.2019.8880086","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880086","url":null,"abstract":"Mott transition materials seem particularly promising to design reconfigurable devices. In this paper, Vanadium Dioxide (VO2) is studied and characterized to design switches and elementary RF devices. The study shows experimentally promising RF performances under electrical control and also for an optical excitation of the VO2 with ultra-short switching time. These results put forward the use of VO2 switches as a core function to design ultra-fast purpose RF devices dedicated to future military and civilian standards.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121199099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electromagnetic and mechanical analyses of a 3D-printed ka-band integrated twist and orthomode transducer 3d打印ka波段集成扭曲和正交传感器的电磁和力学分析
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880125
G. Addamo, O. Peverini, D. Manfredi, F. Calignano, F. Paonessa, M. Lumia, G. Virone
{"title":"Electromagnetic and mechanical analyses of a 3D-printed ka-band integrated twist and orthomode transducer","authors":"G. Addamo, O. Peverini, D. Manfredi, F. Calignano, F. Paonessa, M. Lumia, G. Virone","doi":"10.1109/IMWS-AMP.2019.8880125","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880125","url":null,"abstract":"In this paper the design and 3D manufacturing of a Ka-band integrated twist and orthomode transducer is discussed. The prototype has been manufactured in the AlSi10Mg alloy through SLM. The device has been measured showing a significant agreement with the predicted results. Moreover, exploiting a computed scan tomography the accuracy on the internal channel has been analysed and a sensitivity analysis has been carried out in order to understand the repeatability of the manufacturing process.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132716259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Imaging Characteristics of a 24 × 24 Channel MIMO FMCW Radar based on a SiGe:C Chipset 基于SiGe:C芯片组的24 × 24通道MIMO FMCW雷达成像特性
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880076
S. Kueppers, R. Herschel, Siying Wang, Dirk Nüer, N. Pohl
{"title":"Imaging Characteristics of a 24 × 24 Channel MIMO FMCW Radar based on a SiGe:C Chipset","authors":"S. Kueppers, R. Herschel, Siying Wang, Dirk Nüer, N. Pohl","doi":"10.1109/IMWS-AMP.2019.8880076","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880076","url":null,"abstract":"In this paper, the imaging characteristics of a novel compact $24 times 24$ channel MIMO FMCW radar operating at 120GHz are examined. A basic overview of the 25cm $times 13$ cm $times 3.8$ cm radar hardware and the custom application specific integrated SiGe:C chipset is shown. The image reconstruction algorithm is presented and verified using simulated and measured data showing key performance features of 1 angular resolution and a sidelobe suppression of 20dB. Additionally the impact of different surface types on imaging performance is compared using simulated data to highlight its relevance on millimeterwave imaging of realistic scenarios. To demonstrate the imaging capabilities of the MIMO radar system in real world scenarios, a measurement of a coke pile was carried out and the resulting reconstructed image is presented.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133246001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Graphene-Diode-Based Frequency Conversion Mixers for High-Frequency Applications 基于石墨烯二极管的高频应用变频混频器
2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2019-07-01 DOI: 10.1109/IMWS-AMP.2019.8880143
A. Hamed, M. Saeed, Zhenxing Wang, M. Shaygan, D. Neumaier, R. Negra
{"title":"Graphene-Diode-Based Frequency Conversion Mixers for High-Frequency Applications","authors":"A. Hamed, M. Saeed, Zhenxing Wang, M. Shaygan, D. Neumaier, R. Negra","doi":"10.1109/IMWS-AMP.2019.8880143","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2019.8880143","url":null,"abstract":"This paper presents the recent development of graphene-based frequency-conversion mixers for high-frequency applications. The presented circuits are realised employing metal-insulator-graphene (MIG) diodes that are integrated alongside with a monolithic microwave integrated circuit (MMIC) process on a quartz substrate. A single-diode and double-balanced mixers have been designed, fabricated, and characterised in the 2.4 GHz and 10GHz frequency bands, respectively. The characterisation results of the demonstrated circuits promise an excellent performance compared to state-of-the-art graphene field-effect transistors (GFETs) based mixers. In addition, the measured conversion loss of the fabricated mixers competes with the commercial circuits which employ Schottky diodes.","PeriodicalId":109953,"journal":{"name":"2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134222463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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