RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)最新文献_第7页

Radiation-induced loss of rare earth doped silica fibres 稀土掺杂二氧化硅纤维的辐射致损耗

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698961

H. Henschel, O. Kohn, H. U. Schmidt, J. Kirchhof, S. Unger

引用次数: 98

Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams 低能重离子束扰动敏感体厚度和临界能的估计

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.699008

R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifshitz, M. Hass, C. Inguimbert, C. Detcheverry

引用次数: 6

Thermal- and radiation-induced interface traps in MOS devices MOS器件中热和辐射诱导的界面陷阱

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698848

A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov

引用次数: 11

A new integrated test structure for on-chip post-irradiation annealing in MOS devices 一种新的MOS器件片上辐照后退火集成测试结构

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698896

C. Chabrerie, J. Autran, O. Flament, J. Boudenot

引用次数: 0

Radiation resistance of fiberoptic components and predictive models for optical fiber systems in nuclear environments 核环境下光纤系统的耐辐射性能及预测模型

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698963

M. Van Uffelen, P. Jucker, P. Fenaux

引用次数: 26

Solid state sensor for locating and imaging sources of gamma and X-radiation 用于定位和成像伽马和x射线源的固态传感器

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698912

S. Kronenberg, G. Brucker, E. Bechtel

引用次数: 4

Total dose hardness of three commercial CMOS microelectronics foundries 三家商用CMOS微电子铸造厂的总剂量硬度

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698906

J. V. Osborn, R. Lacoe, D. C. Mayer, G. Yabiku

{"title":"Total dose hardness of three commercial CMOS microelectronics foundries","authors":"J. V. Osborn, R. Lacoe, D. C. Mayer, G. Yabiku","doi":"10.1109/RADECS.1997.698906","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698906","url":null,"abstract":"We have measured the effects of total ionizing dose (TID) on CMOS FETs, ring oscillators and field-oxide transistor test structures fabricated at three different commercial foundries with four different processes. The foundries spanned a range of integration levels and included Hewlett-Packard (HP) 0.5 /spl mu/m and 0.8 /spl mu/m processes, an Orbit 1.2 /spl mu/m process, and an AMI 1.6 /spl mu/m process. We found that the highest tolerance to TID was for the HP 0.5 /spl mu/m process, where the shift in NMOS threshold voltage was less than 40 mV at 300 krad. An examination of the dependence of the threshold voltage shift on gate oxide thickness indicated that oxides of the different commercial processes were of similar quality, and that the improvement in the total dose tolerance of the HP 0.5 /spl mu/m technology is associated with the scaling of the gate oxide. Measurements on field-oxide transistors from the HP 0.5 /spl mu/m process were shown not to invert for signal voltages at 300 krad, maintaining the integrity of the LOCOS isolation. The impact of these results is, discussed in terms of the potential insertion of commercial microelectronics into space systems.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132236071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 68

Energy deposited by high energy neutrons and protons in silicon (comparison between HETC and COSMIC codes) 高能中子和质子在硅中沉积的能量(HETC和COSMIC代码的比较)

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698995

C. Vial, J. Palau, J. Gasiot, J. Nadai, M. Calvet, S. Fourtine, D. Roth, O. Bersillon

引用次数: 2

Laser simulation adequacy of dose rate latch-up 激光模拟剂量率闭锁的充分性

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698941

P. Skorobogatov, A. Nikiforov, B. A. Ahabaev

引用次数: 1

MESFET destruction model and experimental validation MESFET破坏模型及实验验证

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698881

S. Telliez, J. Brasile, N. Samama

引用次数: 7