MESFET破坏模型及实验验证

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698881

S. Telliez, J. Brasile, N. Samama

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引用次数: 7

摘要

本文提出了一种新的GaAs mesfet在功率脉冲作用下的行为模型。这个基本模型似乎与已发表的实验结果令人满意地拟合，并被证明对干扰或破坏所考虑的部件所需的功率的初步估计足够精确。

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MESFET destruction model and experimental validation

This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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