MOS器件中热和辐射诱导的界面陷阱

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698848

A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov

{"title":"MOS器件中热和辐射诱导的界面陷阱","authors":"A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov","doi":"10.1109/RADECS.1997.698848","DOIUrl":null,"url":null,"abstract":"The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"109 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Thermal- and radiation-induced interface traps in MOS devices\",\"authors\":\"A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov\",\"doi\":\"10.1109/RADECS.1997.698848\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.\",\"PeriodicalId\":106774,\"journal\":{\"name\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"volume\":\"109 12\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1997.698848\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

实验研究了辐照后热退火和辐射诱导电荷中和(RICN)过程中界面陷阱的形成机制。衬底电子的作用在辐照后界面陷阱的建立中是显著的。在保守的低剂量率响应估计方面，发现RICN不能取代标准的热退火试验。

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Thermal- and radiation-induced interface traps in MOS devices

The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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