MESFET destruction model and experimental validation

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698881

S. Telliez, J. Brasile, N. Samama

引用次数: 7

Abstract

This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.

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MESFET破坏模型及实验验证

本文提出了一种新的GaAs mesfet在功率脉冲作用下的行为模型。这个基本模型似乎与已发表的实验结果令人满意地拟合，并被证明对干扰或破坏所考虑的部件所需的功率的初步估计足够精确。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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