2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers最新文献_第4页

Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s Sub-100 nm再生S/D栅极- last In0.7Ga0.3As QW mosfet， μn,eff > 5,500 cm2/V-s

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894351

C. Shin, W. Park, S. Shin, Y. D. Cho, D. Ko, T. Kim, D. Koh, H. Kwon, R. Hill, P. Kirsch, W. Maszara, D. Kim

引用次数: 7

The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design 通过新的磁栅堆叠方案设计，在Ge (100) n- fet上展示了具有Jg-EOT良好特性的巨大磁电容和“负”电容效应以及晶体管的性能

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894375

M. Liao, S. C. Huang, C. Y. Liu, P. G. Chen, S. Kao, C. Lien

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引用次数: 4

High performance mobile SoC design and technology co-optimization to mitigate high-K metal gate process induced variations 高性能移动SoC设计和技术协同优化，以减轻高k金属栅极工艺引起的变化

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894381

Sam Yang, L. Ge, Jeff Lin, M. Han, Dang-qiang Yang, Joseph Wang, Kasim H. Mahmood, Tony Song, D. Yuan, Dongwon Seo, M. Pedrali-Noy, D. Alladi, Sameer Wadhwa, Xiaoliang Bai, Liang Dai, S. Yoon, E. Terzioglu, S. Bazarjani, G. Yeap

引用次数: 8

Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinement 不同铟(x)浓度和量子约束下InxGa1−xAs FinFET结构的研究

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894372

V. Arun, N. Agrawal, G. Lavallee, M. Cantoro, Sang-Su Kim, Dong-Won Kim, S. Datta

引用次数: 6

III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si 采用超薄体InAs/GaSb-OI通道的III-V单结构CMOS

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894350

M. Yokoyama, H. Yokoyama, M. Takenaka, S. Takagi

引用次数: 13

Customer value creation in the information explosion era 信息爆炸时代的客户价值创造

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894340

Keiichiro Shimada

引用次数: 1

The demonstration of D-SMT stressor on Si and Ge n-FinFETs D-SMT应力源在Si和Ge n- finfet上的演示

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894424

M. Liao, P. G. Chen, S. C. Huang, S. Kao, C. X. Hung, K. Liu, C. Lien, C. Y. Liu

引用次数: 5

Low-loss silicon interposer for three-dimensional system integration with embedded microfluidic cooling 低损耗硅中间体三维系统集成与嵌入式微流控冷却

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894399

Paragkumar Thadesar, Li Zheng, M. Bakir

引用次数: 5

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories 演示全功能8Mb垂直STT-MRAM芯片，写入低于5ns，用于非易失性嵌入式存储器

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894357

G. Jan, L. Thomas, S. Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, R. Tong, K. Pi, Yu-Jen Wang, D. Shen, R. He, J. Haq, J. Teng, V. Lam, K. Huang, T. Zhong, T. Torng, P. Wang

引用次数: 63

Group IV channels for 7nm FinFETs: Performance for SoCs power and speed metrics 用于7nm finfet的第四组通道:soc功率和速度指标的性能

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI: 10.1109/VLSIT.2014.6894380

M. Bardon, P. Raghavan, G. Eneman, P. Schuddinck, M. Dehan, A. Mercha, A. Thean, D. Verkest, A. Steegen

引用次数: 11