Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

Abstract

This paper reports on gate-last (GL) In_0.7Ga_0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μ_n,eff>5,500 cm²/V-s at 300k). Short-channel device with L_g = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with g_{m_max} = 2 mS/μm at V_DS = 0.5 V. This record performance is achieved by using a low D_it and Al₂O₃/HfO₂ gate stack with EOT ~ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.