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Thin-film oxygen sensors made of reactively sputtered ZnO 由反应溅射ZnO制成的薄膜氧传感器
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87034-9
Uwe Lampe , Jörg Müller
{"title":"Thin-film oxygen sensors made of reactively sputtered ZnO","authors":"Uwe Lampe ,&nbsp;Jörg Müller","doi":"10.1016/0250-6874(89)87034-9","DOIUrl":"10.1016/0250-6874(89)87034-9","url":null,"abstract":"<div><p>A thin-film zinc oxide chemical sensor with integrated heater and temperature sensor for the measurement of oxygen in water is described. The principle of operation and the fabrication steps are given. The sensor operates at a temperature near 300 °C. A simple reaction model explains the linear increase of the sensor resistivity with increasing oxygen concentration and the logarithmic time response. The measurement of the oxygen concentration in water is demonstrated with an arrangement incorporating a membrane and a low nitrogen flow.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 269-284"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87034-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72463361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 65
Study of boron nitride thin films for ultraviolet-sensor applications 氮化硼薄膜在紫外传感器中的应用研究
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87045-3
Nisar Ahmad , David Lichtman
{"title":"Study of boron nitride thin films for ultraviolet-sensor applications","authors":"Nisar Ahmad ,&nbsp;David Lichtman","doi":"10.1016/0250-6874(89)87045-3","DOIUrl":"10.1016/0250-6874(89)87045-3","url":null,"abstract":"<div><p>A study is carried out to evaluate the ability of boron nitride thin films to act as ultraviolet - sensitive semiconductors. Boron nitride thin films are sputter deposited from a BN target in Ar, Ar/N<sub>2</sub> and N<sub>2</sub> discharges. Inter-digital electrodes of various geometries and varying spacing are laid out photolithographically. Results of <em>I</em>(dark) <em>verus</em> voltage and <em>I</em>(u.v.) <em>versus V</em> in the temperature range −40 °C to 80°C are presented here. Preliminary studies on the effect of doping boron nitride films with aluminum and zinc impurities do not yield significant results.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 397-405"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87045-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88834968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Integrated sensor for non-invasive monitoring of flow in pipes 集成传感器，用于无创监测管道流量
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87033-7
B.W. van Oudheusden, J.M. de Bruijn, P.J. Hoogeboom, D. Beaufort, J.H. Huijsing
{"title":"Integrated sensor for non-invasive monitoring of flow in pipes","authors":"B.W. van Oudheusden,&nbsp;J.M. de Bruijn,&nbsp;P.J. Hoogeboom,&nbsp;D. Beaufort,&nbsp;J.H. Huijsing","doi":"10.1016/0250-6874(89)87033-7","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87033-7","url":null,"abstract":"<div><p>A silicon chip fabricated with standard IC technology has been used to monitor air flow in a pipe in a non-invasive way through the pipe wall. Flow detection is based on the measurement of a temperature difference on the chip, which is heated with respect to the flow. The device is direction sensitive and has a zero output in the absence of flow. In the experiment the detection threshold for air flow is approximately 0.1 m/s.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 259-267"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87033-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91760782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Gas-sensing characteristics of Li+-doped and undoped ZnO whiskers Li+掺杂和未掺杂ZnO晶须的气敏特性
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87041-6
M. Egashira, N. Kanehara, Y. Shimizu, H. Iwanaga
{"title":"Gas-sensing characteristics of Li+-doped and undoped ZnO whiskers","authors":"M. Egashira,&nbsp;N. Kanehara,&nbsp;Y. Shimizu,&nbsp;H. Iwanaga","doi":"10.1016/0250-6874(89)87041-6","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87041-6","url":null,"abstract":"<div><p>The gas-sensing characteristics of Li<sup>+</sup>-doped and undoped ZnO whiskers were investigated for 1% carbon monoxide, 1% hydrogen and 1% methane in air as a function of the operating temperature between 200 °C and 700 °C. The gas sensitivities of undoped ZnO whiskers were negligibly small to the sample gases because of their extremely low resistivities in air. However, the sensitivity was significantly enhanced by Li<sup>+</sup>-doping of the whiskers. The values of the enhanced sensitivities were comparable to those of the as-grown [101] SnO<sub>2</sub> whiskers. But there was no definite correlation between the sensitivity and the morphology of the Li<sup>+</sup>-doped ZnO whiskers.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 349-360"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87041-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91760785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
A batch-fabricated non-reverse valve with cantilever beam manufactured by micromachining of silicon 一种采用硅微加工技术批量制造悬臂梁式非反向阀
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87044-1
J. Tirén, L. Tenerz, B. Hök
{"title":"A batch-fabricated non-reverse valve with cantilever beam manufactured by micromachining of silicon","authors":"J. Tirén,&nbsp;L. Tenerz,&nbsp;B. Hök","doi":"10.1016/0250-6874(89)87044-1","DOIUrl":"10.1016/0250-6874(89)87044-1","url":null,"abstract":"<div><p>A batch-fabricated non-reverse valve has been manufactured in silicon with micromachining tools, <em>i.e.</em>, electrochemical doping-selective etching in KOH and anisotropic etching in EDP. The valve simply consists of a cantilever beam that can take two positions, one letting a gas or a fluid through the valve, the other forced by the pressure to close on of the two inlet holes.</p><p>The valve features fast response, small size, batch manufacturing and small dead volumes, and also shows an application of the mechanical strength of silicon. A simple theory is used to predict the basic characteristics of the valve.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 389-396"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87044-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78702008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 60
An optical displacement transducer for aerospace applications 一种用于航空航天应用的光学位移传感器
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87030-1
J. Manwell , G. Bailey, P. Parsons, P. Richards, D. Kreit
{"title":"An optical displacement transducer for aerospace applications","authors":"J. Manwell ,&nbsp;G. Bailey,&nbsp;P. Parsons,&nbsp;P. Richards,&nbsp;D. Kreit","doi":"10.1016/0250-6874(89)87030-1","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87030-1","url":null,"abstract":"<div><p>A passive optical linear displacement transducer for aerospace applications has been developed. The principle of operation is the wavelength encoding of the position of a reflective Gray code. The design allows the sensor to be passively interrogated using only two optical fibres. The example described here has a 38 mm stroke with a 38 μm resolution. The same principle can be applied to longer stroke linear sensors and rotary displacement sensors.</p><p>The optical design is based on the wavelength division of a broad-band source into 11 spectral bands, which are directed onto a reflective Gray code. The reflected light is decoded by a second wavelength division multi-plexer in the electronics housing and the position of the Gray code is determined by the respective on/off states of the channels. The transducer has been designed to operate in the harsh aerospace environment. The housing is of rugged construction to withstand the standard range of temperature, vibration, pressure and contamination conditions.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 233-237"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87030-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90126096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The effect of shear stress on the piezoresistance of silicon 剪切应力对硅抗压性能的影响
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87029-5
Yan Wang, Min-Hang Bao, Lian-Zhong Yu
{"title":"The effect of shear stress on the piezoresistance of silicon","authors":"Yan Wang,&nbsp;Min-Hang Bao,&nbsp;Lian-Zhong Yu","doi":"10.1016/0250-6874(89)87029-5","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87029-5","url":null,"abstract":"<div><p>General analyses of the piezoresistance, taking into consideration the effect of shear stress, have been made for circular, square and rectangular silicon diaphragms. The analyses can lead to the design of a full-bridge pressure transducer on a (110) circular diaphragm with 30% higher sensitivity than previous designs. Experimental results showing the dependence of the piezoresistive sensitivity on the inclination angle agree well with the results of general analyses. Experiments show that the information obtained might also be useful in a new application where the non-linearity of transverse voltage of a four-terminal resistor can be compensated for by its own piezoresistive sensitivity of resistance.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 221-231"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87029-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90126097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Electrical conduction in solid-state gas sensors 固态气体传感器中的导电
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87043-X
Julian W. Gardner
{"title":"Electrical conduction in solid-state gas sensors","authors":"Julian W. Gardner","doi":"10.1016/0250-6874(89)87043-X","DOIUrl":"10.1016/0250-6874(89)87043-X","url":null,"abstract":"<div><p>The gas-sensing properties of metal-oxide semiconductors have been studied extensively over the past twenty years. There has been renewed interest recently in their application in differential gas sensor arrays and the association with cellular automata and neural networking methods. A <em>diffusion-based</em> analytical model is considered that relates the electrical conductance of a porous thick-film semiconductor gas sensor to its physical and geometrical properties. The theoretical responses of sensing elements with several configurations have been derived, and compared with experimental data on tin-oxide sensors exposed to simple alcohols. The results obtained broadly agree with the predictions of the basic model at low gas concentrations (&lt;50 ppm); but, at higher gas concentrations (&gt;50 ppm), the model needs to incorporate a dependence of the gas diffusivity upon concentration.</p><p>The effect of changes in sensor design on the response is considered, and the optimum coplanar electrode configuration is obtained when the electrodes lie a distance equal to the electrode separation below the semiconductor surface. Thus, the use of a fully-developed analytical model may well lead to improvements in sensor design and to modifications in the decision criteria currently utilized in pattern recognition techniques.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 373-387"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87043-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89129704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Mechanism of hydrogen gas-sensing at low temperatures using Rh/TiO2 systems Rh/TiO2体系低温氢气感测机理研究
Sensors and Actuators Pub Date : 1989-07-01 DOI: 10.1016/0250-6874(89)87040-4
G. Munuera, A.R. González-Elipe, A. Muñoz, A. Fernández, J. Soria, J. Conesa, J. Sanz
{"title":"Mechanism of hydrogen gas-sensing at low temperatures using Rh/TiO2 systems","authors":"G. Munuera,&nbsp;A.R. González-Elipe,&nbsp;A. Muñoz,&nbsp;A. Fernández,&nbsp;J. Soria,&nbsp;J. Conesa,&nbsp;J. Sanz","doi":"10.1016/0250-6874(89)87040-4","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87040-4","url":null,"abstract":"<div><p>The effects of H<sub>2</sub> adsorption on the conductivity of pressed pellets of a Rh/TiO<sub>2</sub> polycrystalline material are studied as a function of the degree of hydroxylation and reduction of the TiO<sub>2</sub> support.</p><p>The process involved in the enhancement of conductivity induced by the adsorption of H<sub>2</sub> at 295 K is examined in detail with the aid of different techniques including e.p.r., n.m.r. and i.r. spectroscopies. The results show that this material can be an efficient sensor for H<sub>2</sub> at 295 K in ambient atmosphere. A mechanism is proposed for the behaviour of this H<sub>2</sub> sensor, which involves electron and proton transfer from the Rh metal to the TiO<sub>2</sub> semiconductor in the presence of H<sub>2</sub>.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 337-348"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87040-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91760787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Geometric design rules of four-terminal gauge for pressure sensors 压力传感器四端压力表几何设计准则
Sensors and Actuators Pub Date : 1989-06-15 DOI: 10.1016/0250-6874(89)87014-3
Min-Hang Bao, Wei-Jia Qi, Yan Wang
{"title":"Geometric design rules of four-terminal gauge for pressure sensors","authors":"Min-Hang Bao,&nbsp;Wei-Jia Qi,&nbsp;Yan Wang","doi":"10.1016/0250-6874(89)87014-3","DOIUrl":"https://doi.org/10.1016/0250-6874(89)87014-3","url":null,"abstract":"<div><p>Both numerical analysis using the finite differential method and experimental measurements are performed for varius geometric designs of rectangular four-terminal pressure gauges to assess the short-circuiting effect of current contacts and sensor contacts on the sensitivity of the sensor. The agreement between the calculated and experimental results is quite good. Based on the results obtained, geometric design rules are suggested: the length:width ratio of the body should be 1:1 to 1:2 and the length:width ratio for the signal conducting arms should be around 1:1.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 2","pages":"Pages 149-156"},"PeriodicalIF":0.0,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87014-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91755832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
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