Progress in Crystal Growth and Characterization最新文献_第8页

The x ray anomalous dispersion corrections and their use for the characterization of materials x射线异常色散校正及其在材料表征中的应用

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90015-3

D. Creagh

引用次数: 1

Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds ABC2和AB2C4四面体化合物的结构畸变和多态行为

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90008-6

L. Garbato, F. Ledda, A. Rucci

{"title":"Structural distortions and polymorphic behaviour in ABC2 and AB2C4 tetrahedral compounds","authors":"L. Garbato, F. Ledda, A. Rucci","doi":"10.1016/0146-3535(87)90008-6","DOIUrl":"10.1016/0146-3535(87)90008-6","url":null,"abstract":"<div>We examine the connections between thermal polymorphism and structural properties in the families of normal ABC2 and defect AB2C4 tetrahedral structure compounds. We show that the thermal stability of these ternary compounds in the ordered tetragonal structure is strongly determined by the values of the lattice distortion parameters. Separate analysis is presented in terms of the room temperature lattice compression ηo=co /2ao (tetragonal distortion) and of the anion displacement σo from the ideal position (internal distortion). We find that for the ABC2 compounds the chalcopyrite structure remains stable up to the melting temperature for ηo values below <math><mtext>η</mtext><msup><mi></mi><mn>∗</mn></msup><msub><mi></mi><mn>o</mn></msub><mtext>= 0.977 ± ± 0.001</mtext></math>, while no critical value is obtained for the AB2C4 compounds. The exceptions of ZnGeP2, AgInS2, and AgInSe2 are examined separately. Conversely, by considering the internal distortion, it turns out that the order-disorder behaviour occurs, for both families of compounds and without exceptions, for anion displacement values below <math><mtext>σ</mtext><msup><mi></mi><mn>∗</mn></msup><msub><mi></mi><mn>o</mn></msub><mtext> = 0.0145 ± 0.0005</mtext></math>. The effect on the symmetry changes due to the temperature dependence of the structural distortions is also considered and discussed.</div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"15 1","pages":"Pages 1-41"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90008-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80594168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 60

Development of large single crystals for electronic, electro-optic and acousto-optic devices 用于电子、电光和声光器件的大单晶的开发

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90002-5

Robert Mazelsky , Donald K. Fox

引用次数: 3

Diffuse x-ray scattering from crystals 晶体的漫射x射线散射

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90016-5

Heinz Jagodzinski

引用次数: 17

Contents, subject index and compound index 目录、主题索引和复合索引

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90012-8

引用次数: 0

Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys 非磁性缺陷aibiii2xiv4化合物和合金的结构和晶格动力学

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90009-8

C. Razzetti , P.P. Lottici , G. Antonioli

引用次数: 25

Impurities and defects in silicon single crystal 硅单晶中的杂质与缺陷

Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90003-7

L. Meda, G.F. Cerofolini, G. Queirolo

引用次数: 2

LPE growth of InGaAs/InP and AiGaInAs/InP structures InGaAs/InP和AiGaInAs/InP结构的LPE生长

Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90008-0

Kazuo Nakajima

{"title":"LPE growth of InGaAs/InP and AiGaInAs/InP structures","authors":"Kazuo Nakajima","doi":"10.1016/0146-3535(86)90008-0","DOIUrl":"10.1016/0146-3535(86)90008-0","url":null,"abstract":"<div>General studies for liquid phase epitaxial (LPE) growth of InGaAs layers on InP substrates are described; i.e. experimental determination and calculation of the In-Ga-As ternary phase diagram, LPE growth conditions for the growth of lattice-matched In0.53Ga0.47As layers on InP substrates, substrate orientation dependence of distribution coefficients and growth rate, growth conditions to obtain misfit dislocation-free InGaAs layers and behavior of misfit dislocations, growth conditions to obtain high-purity InGaAs layers, the direct growth of InP on InGaAs layers using (111)A oriented substrates, and application of LPE grown InGaAs for avalanche photodiodes. As a topic of LPE growth of InGaAs/InP, a new method to supply solute elements, Ga and As, in growth solutions for the purpose of growth of very thick InGaAs layers is demonstrated.The LPE growth of AlGaInAs layers on InP substrates is also described; i.e. calculated results of the Al-Ga-In-As quaternary phase diagram, LPE growth conditions for the growth of lattice-matched Al0.48In0.52As and AlGaInAs layers on InP substrates, substrate orientation dependence of surface morphology of the LPE layers, growth rate of Al0.48In0.52As and AlGaInAs, growth of heterostructures, and electrical and optical properties of Al0.48In0.52As and AlGaInAs layers.</div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"12 1","pages":"Pages 97-213"},"PeriodicalIF":0.0,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(86)90008-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91471969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Crystal growth, characterization and application of II V compounds II - V化合物的晶体生长、表征及应用

Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90024-9

E.K. Arushanov

引用次数: 39

Review of international tables for crystallography, brief teaching edition of volume A — Space-group symmetry 国际晶体学表综述，A卷简编教学版-空间群对称

Progress in Crystal Growth and Characterization Pub Date : 1986-01-01 DOI: 10.1016/0146-3535(86)90022-5

R.A.L. Sullivan

引用次数: 0