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Progress in Crystal Growth and Characterization最新文献

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The x ray anomalous dispersion corrections and their use for the characterization of materials x射线异常色散校正及其在材料表征中的应用
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90015-3
D.C. Creagh
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引用次数: 1
Defects in solids, vol. 15; etching of crystals — theory, Experiment and application 固体缺陷，第15卷;晶体蚀刻。理论、实验与应用
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90006-2
K. Byrappa
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引用次数: 0
Study of axial uniformity in NTD-Si crystal ingots NTD-Si晶锭轴向均匀性研究
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90004-9
Xu Wen-yao , Wang Yong-yue
{"title":"Study of axial uniformity in NTD-Si crystal ingots","authors":"Xu Wen-yao ,&nbsp;Wang Yong-yue","doi":"10.1016/0146-3535(87)90004-9","DOIUrl":"https://doi.org/10.1016/0146-3535(87)90004-9","url":null,"abstract":"<div><p>In this paper, some factors related to axial impurity uniformity in NTD-Si ingots are studied by means of X-ray topography, single probe spreading resistance, four-point probe, preferential etching and the measuring of voltage-current characteristics, etc. The preferential condition of high axial uniformity is also discussed.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"15 2","pages":"Pages 135-143"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90004-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91688819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defects in solids, vol. 15; etching of crystals — theory, Experiment and application: by K. Songwal, edited by Amelinck and Nihoul Publisher: North-Holland Pages: 497 Price: 11 OUS$ ISBN: 0-444-87018-0 固体缺陷，第15卷;晶体蚀刻-理论，实验和应用:由K. Songwal，由amelink和Nihoul编辑出版商:North-Holland页:497价格:11美元ISBN: 0-444-87018-0
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90006-2
K. Byrappa
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引用次数: 0
Recent methods and applications of x-ray fluorescence analysis x射线荧光分析的新方法及应用
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90019-0
M. Mantler
{"title":"Recent methods and applications of x-ray fluorescence analysis","authors":"M. Mantler","doi":"10.1016/0146-3535(87)90019-0","DOIUrl":"10.1016/0146-3535(87)90019-0","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"14 ","pages":"Pages 213-261"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90019-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81347466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Study of axial uniformity in NTD-Si crystal ingots NTD-Si晶锭轴向均匀性研究
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90004-9
Xu Wen-yao, Wang Yong-yue
{"title":"Study of axial uniformity in NTD-Si crystal ingots","authors":"Xu Wen-yao, Wang Yong-yue","doi":"10.1016/0146-3535(87)90004-9","DOIUrl":"https://doi.org/10.1016/0146-3535(87)90004-9","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"4 1","pages":"135-143"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81654204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single crystal x-ray diffraction studies of materials at high temperature 高温下材料单晶x射线衍射研究
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90021-9
H. Schulz
{"title":"Single crystal x-ray diffraction studies of materials at high temperature","authors":"H. Schulz","doi":"10.1016/0146-3535(87)90021-9","DOIUrl":"10.1016/0146-3535(87)90021-9","url":null,"abstract":"<div><p>The thermal motion of the atoms influences the intensities of the Bragg reflections. This influence is expressed by a temperature factor. Static disorder generates similar effects, which may be expressed by a pseudo temperature factor. The displacements of the atoms from their mean positions can be described by a probability density function (pdf). The temperature factors and the probability density functions are connected with each other by a Fourier transformation. An effective one particle potential can be calculated from the pdf. The so-called anisotropic temperature factors, frequently calculated in standard structure determinations, assumes a harmonic (parabolic) potential. A more general temperature factor formalism has to take into account anharmonic potentials and the corresponding anharmonic temperature factors. This article describes the mathematical basis of a general temperature factor formalism and an application of this formalism.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"14 ","pages":"Pages 303-314"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90021-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82090861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The simulation of x-ray topographic images x射线地形图像的模拟
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90026-8
Y. Epelboin
{"title":"The simulation of x-ray topographic images","authors":"Y. Epelboin","doi":"10.1016/0146-3535(87)90026-8","DOIUrl":"10.1016/0146-3535(87)90026-8","url":null,"abstract":"","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"14 ","pages":"Pages 465-506"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90026-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87752529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Characterization of the perfection of large single crystals by means of γ-ray diffractometry 用γ射线衍射法表征大单晶的完美性
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90022-0
Jochen R. Schneider, Hans A. Graf
{"title":"Characterization of the perfection of large single crystals by means of γ-ray diffractometry","authors":"Jochen R. Schneider,&nbsp;Hans A. Graf","doi":"10.1016/0146-3535(87)90022-0","DOIUrl":"10.1016/0146-3535(87)90022-0","url":null,"abstract":"<div><p>Bragg diffraction experiments with γ-radiation of energies of the order of 400 keV allow for high resolution studies of bulk properties of large single crystals which are relevance for the characterization of as grown single crystals as well as for the investigation of structural phase transitions. The absorption of this radiation in matter is very weak, as an example, the mean free path in copper is μ<sub>o</sub><sup>−1</sup> ⋍ 1 cm. Therefore samples can be mounted in any cryostat, furnace or high pressure device without causing window problems. The Bragg angles are only of the order of 1° and thus the shape of the measured diffraction profile is mainly affected by lattice tilts. γ-ray diffractometry is complementary to back scattering techniques which are most suitable for lattice parameter measurements. Using a double crystal setting diffraction patterns are recorded with an angular resolution of 1 second of arc. The integrated reflecting power is measured absolutely with an accuracy of 1% or better and by using various wave lengths in the range between 0.02 and 0.04 Å, highly accurate, model independent structure factors can be determined from imperfect single crystals by means of wave length extrapolation techniques. Because of the short wave length polarization effects are neglibible. The full width at half maximum of the diffraction pattern of a perfect crystal as predicted by dynamical diffraction theory is generally less than 0.5 seconds of arc and the extinction length is of the order of 0.5 mm. Therefore small distortions from a perfect lattice cause rather large changes in the measured integrated reflecting power. Recently Pendellösung intensity beats could be measured in Si with 316 and 468 keV γ-radiation allowing to determine the 220 structure factor with an accuracy of ±- 0.1 %. In addition a surprisingly anisotropic strain field has been observed in floating-zone grown Si crystals.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"14 ","pages":"Pages 315-365"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90022-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87372163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth and characterization of Bi4Ge3O12 single crystals Bi4Ge3O12单晶的生长与表征
Progress in Crystal Growth and Characterization Pub Date : 1987-01-01 DOI: 10.1016/0146-3535(87)90010-4
Gabriel Gévay
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引用次数: 38
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