{"title":"NTD-Si晶锭轴向均匀性研究","authors":"Xu Wen-yao , Wang Yong-yue","doi":"10.1016/0146-3535(87)90004-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, some factors related to axial impurity uniformity in NTD-Si ingots are studied by means of X-ray topography, single probe spreading resistance, four-point probe, preferential etching and the measuring of voltage-current characteristics, etc. The preferential condition of high axial uniformity is also discussed.</p></div>","PeriodicalId":101046,"journal":{"name":"Progress in Crystal Growth and Characterization","volume":"15 2","pages":"Pages 135-143"},"PeriodicalIF":0.0000,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0146-3535(87)90004-9","citationCount":"0","resultStr":"{\"title\":\"Study of axial uniformity in NTD-Si crystal ingots\",\"authors\":\"Xu Wen-yao , Wang Yong-yue\",\"doi\":\"10.1016/0146-3535(87)90004-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper, some factors related to axial impurity uniformity in NTD-Si ingots are studied by means of X-ray topography, single probe spreading resistance, four-point probe, preferential etching and the measuring of voltage-current characteristics, etc. The preferential condition of high axial uniformity is also discussed.</p></div>\",\"PeriodicalId\":101046,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization\",\"volume\":\"15 2\",\"pages\":\"Pages 135-143\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0146-3535(87)90004-9\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0146353587900049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0146353587900049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of axial uniformity in NTD-Si crystal ingots
In this paper, some factors related to axial impurity uniformity in NTD-Si ingots are studied by means of X-ray topography, single probe spreading resistance, four-point probe, preferential etching and the measuring of voltage-current characteristics, etc. The preferential condition of high axial uniformity is also discussed.
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